JPH08130202A - Rotary semiconductor substrate treatment equipment - Google Patents
Rotary semiconductor substrate treatment equipmentInfo
- Publication number
- JPH08130202A JPH08130202A JP26698594A JP26698594A JPH08130202A JP H08130202 A JPH08130202 A JP H08130202A JP 26698594 A JP26698594 A JP 26698594A JP 26698594 A JP26698594 A JP 26698594A JP H08130202 A JPH08130202 A JP H08130202A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- cleaning
- processing
- liquid
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、被処理半導体基板を相
対的に回転してその被処理面を処理液により処理する回
転式半導体基板処理装置に関する。本発明は、例えば、
半導体基板を洗浄処理液により洗浄処理する場合や、エ
ッチング液によるエッチング処理する場合などの各種の
液体による半導体基板処理の場合に適用することができ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rotary semiconductor substrate processing apparatus for relatively rotating a semiconductor substrate to be processed and processing the surface to be processed with a processing liquid. The present invention is, for example,
The present invention can be applied to a case where a semiconductor substrate is subjected to a cleaning treatment with a cleaning treatment liquid, or a semiconductor substrate is treated with various liquids such as an etching treatment with an etching liquid.
【０００２】[0002]
【従来の技術及びその問題点】従来のこの種のもの、例
えば半導体基板を洗浄処理するための一般のスピン洗浄
機は、図６に示すように、回転している被処理（被洗
浄）半導体基板１であるウェーハの表面のに洗浄処理液
やリンスのための純水などの処理液を供給する場合、次
のような構成をとっている。2. Description of the Related Art A conventional spin cleaning machine for cleaning a semiconductor substrate of this type, for example, a semiconductor substrate is shown in FIG. When a processing solution such as a cleaning processing solution or pure water for rinsing is supplied to the surface of the wafer which is the substrate 1, it has the following configuration.
【０００３】まず、回転中心上方に設置された洗浄処
理液（薬液）供給口３から処理液を供給し、被処理基板
１であるウェーハの回転により処理液を回転させ、その
ときに生じる遠心力によって洗浄用処理液を被洗浄基板
１（ウェーハ）全体に均一に拡がらせるようになってい
る構成のものがある。（図６中、符号２は半導体基板保
持具を兼ねるスピナーである。）First, a processing liquid is supplied from a cleaning processing liquid (chemical liquid) supply port 3 installed above the center of rotation, and the processing liquid is rotated by the rotation of a wafer which is the substrate 1 to be processed, and a centrifugal force generated at that time is generated. There is a configuration in which the cleaning treatment liquid is evenly spread over the entire substrate 1 (wafer) to be cleaned. (In FIG. 6, reference numeral 2 is a spinner that also serves as a semiconductor substrate holder.)
【０００４】また、回転している被処理（被洗浄）基
板１（ウェーハ）の上方に洗浄処理液供給口３を設ける
とともに、処理液を供給しながら供給口３をウェーハの
同径方向に往復移動させ、ウェーハ全体に薬液を供給す
る構成のものがある。Further, a cleaning treatment liquid supply port 3 is provided above the rotating substrate to be treated (cleaning target) 1 (wafer), and the supply port 3 reciprocates in the same radial direction of the wafer while supplying the treatment liquid. There is a structure in which the liquid is moved and a chemical liquid is supplied to the entire wafer.
【０００５】いずれの場合も、処理液が回転している被
処理基板１（ウェーハ）に接触することで生じる回転運
動に起因する遠心力によって、被処理基板１（ウェー
ハ）全体への処理液の供給や置換を行っている。即ち換
言すれば、この遠心力により供給効率や置換効率の向上
を行っている。しかしながら、従来技術にあっては、処
理液に回転運動を発生させる要因は、回転している被処
理基板１（ウェーハ）と処理液との接触部分で生じる摩
擦だけであり、洗浄処理液に十分な回転が与えられない
ことや、ウェーハ近傍の洗浄処理液よりも液表面の方の
処理液のみ同径方向外側に移動するため、置換効率が悪
い。このため処理液の無駄も生じる。In any case, the centrifugal force caused by the rotational motion caused by the contact of the processing liquid with the rotating substrate 1 (wafer) causes the processing liquid to flow over the entire substrate 1 (wafer). Supplying and replacing. That is, in other words, this centrifugal force improves the supply efficiency and the replacement efficiency. However, in the conventional technique, the factor that causes the rotational movement of the processing liquid is only the friction generated at the contact portion between the rotating substrate 1 (wafer) and the processing liquid, which is sufficient for the cleaning processing liquid. Rotation is not applied, and only the processing solution on the surface of the cleaning solution moves to the outside in the same radial direction as compared to the cleaning processing solution near the wafer, so the replacement efficiency is poor. Therefore, the processing liquid is wasted.
【０００６】また、被処理基板１（ウェーハ）と洗浄処
理液との濡れ性が悪い場合、特に上記においては、均
一に処理液をウェーハに接触させるためには多量の処理
液（薬液）の供給が必要となる。When the substrate 1 (wafer) to be processed and the cleaning treatment liquid have poor wettability, particularly in the above case, a large amount of treatment liquid (chemical liquid) is supplied in order to bring the treatment liquid into uniform contact with the wafer. Is required.
【０００７】通常、図６に示すような一般のスピン洗浄
機では、被処理基板２であるウェーハは水平に保持され
回転する。このとき下の面を同時に洗浄する時や、上面
のみ洗浄する場合でも上面を洗浄した洗浄処理液が下面
に回り込まないようにする時には、洗浄処理液や純水な
どの処理液を下面に一カ所もしくは複数のノズルから吹
き付けるようになっている。しかしながら、重力の影響
でそれらの液体が落下するため、下面全体にそれらの液
体を接触させるためには多量の洗浄処理液及び純水が必
要になる。Normally, in a general spin cleaning machine as shown in FIG. 6, the wafer to be processed 2 is held horizontally and rotated. At this time, when cleaning the lower surface at the same time, or even when cleaning only the upper surface, to prevent the cleaning solution that has cleaned the upper surface from flowing around to the lower surface, place the cleaning solution or pure water on the lower surface at one place. Or it is designed to spray from multiple nozzles. However, since these liquids drop due to the influence of gravity, a large amount of cleaning treatment liquid and pure water are required to bring them into contact with the entire lower surface.
【０００８】また、洗浄処理液はウェーハを洗浄する処
理室の温度と異なった温度（高い温度）で使われる場合
がある。このとき、処理液供給口で温度制御されていて
も、スピン洗浄では処理液である薬液が処理室雰囲気と
接する面積が広いため、処理液の使用量を少なくすれば
するほど処理液の温度低下が発生する。特に、処理液供
給口がウェーハの中心に位置し固定されているもので
は、外周に行くほど温度が低下して洗浄効果が悪くな
る。また、エッチング処理についてこれを適用する場合
は、エッチングの均一性もこの温度勾配によって中心と
周辺で異なってしまう。Further, the cleaning processing liquid may be used at a temperature (high temperature) different from the temperature of the processing chamber for cleaning the wafer. At this time, even if the temperature is controlled at the treatment liquid supply port, the temperature of the treatment liquid decreases as the usage amount of the treatment liquid decreases as the chemical liquid that is the treatment liquid has a large area in contact with the atmosphere of the treatment chamber in spin cleaning. Occurs. In particular, in the case where the processing liquid supply port is located and fixed at the center of the wafer, the temperature lowers toward the outer periphery, and the cleaning effect deteriorates. When this is applied to the etching process, the uniformity of etching also differs between the center and the periphery due to this temperature gradient.
【０００９】一方、洗浄処理液供給口に高周波振動子
（メガソニック発振器など超音波発振器）を付けた洗浄
機があるが、供給口が半導体基板上を移動したとして
も、有効な振動が伝播する部分は被処理半導体基板であ
るウェーハの一部であり、同時に全面に作用しないため
効率が悪い。On the other hand, there is a cleaning machine in which a high-frequency oscillator (ultrasonic oscillator such as a megasonic oscillator) is attached to the cleaning treatment solution supply port. Even if the supply port moves on the semiconductor substrate, effective vibration propagates. The part is a part of the wafer which is the semiconductor substrate to be processed and does not act on the entire surface at the same time, so that the efficiency is low.
【００１０】また、洗浄処理液やリンス液などは外気に
触れているため、大気中の酸素などがそれらの処理液に
溶け込むことが避けられない。処理室全体を窒素ガス等
で満たし、酸素の溶け込みなどを抑える方法がとられて
いるが、洗浄処理液等の処理液の蒸発ガスを処理室から
排気するのと同時にこの窒素ガスなども排気してしまう
ため、補充が必要となり窒素ガスの使用量が多くなって
しまう。Further, since the cleaning treatment liquid and the rinse liquid are exposed to the outside air, it is inevitable that oxygen and the like in the atmosphere will be dissolved in these treatment liquids. The entire process chamber is filled with nitrogen gas or the like to suppress the infiltration of oxygen, but the evaporative gas of the process liquid such as the cleaning process liquid is exhausted from the process chamber and this nitrogen gas is also exhausted. Therefore, it becomes necessary to replenish and the amount of nitrogen gas used increases.
【００１１】[0011]
【発明の目的】本発明は、上記問題点を解決して、処理
液が被処理面の全面に良好に行き渡る回転式半導体基板
処理装置を提供することを目的とする。また、処理温度
を均一とし、及び／または均一処理を可能とする構成に
することが可能な回転式半導体基板処理装置を提供する
ことを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above problems and to provide a rotary semiconductor substrate processing apparatus in which the processing liquid is well spread over the entire surface to be processed. It is another object of the present invention to provide a rotary semiconductor substrate processing apparatus which can have a uniform processing temperature and / or a structure which enables uniform processing.
【００１２】[0012]
【目的を達成するための手段】本出願の請求項１の発明
は、被処理半導体基板を相対的に回転してその被処理面
を処理液により処理する回転式半導体基板処理装置にお
いて、回転する半導体基板の上部及び／または下部に処
理液供給口（一カ所または複数）のある処理液ガイドを
配置して構成した回転式半導体基板処理装置であって、
これにより上記目的を達成するものである。ここで「相
対的に回転して」とは、被処理半導体基板の側を任意に
回転するのでも、処理液供給の側を任意に回転するので
も、双方を任意の方向・任意の速度で回転するのでもよ
いことを意味する。The invention according to claim 1 of the present application rotates in a rotary semiconductor substrate processing apparatus for relatively rotating a semiconductor substrate to be processed and processing the surface to be processed with a processing liquid. What is claimed is: 1. A rotary semiconductor substrate processing apparatus, which is configured by arranging a processing liquid guide having processing liquid supply ports (one or more) on the upper and / or lower part of a semiconductor substrate,
This achieves the above object. Here, "relatively rotating" means that both the side of the semiconductor substrate to be processed is arbitrarily rotated and the side of the processing liquid supply is arbitrarily rotated, both in any direction and at any speed. It means that it can be rotated.
【００１３】本出願の請求項２の発明は、前記処理液ガ
イドの少なくともいずれかに温度調節器を組み込み、か
つ、処理液ガイドの少なくともいずれかに高周波振動子
（メガソニックなど超音波発振器）を組み込む構成とし
たことを特徴とする請求項１に記載の回転式半導体基板
処理装置であって、これにより上記目的を達成するもの
である。According to a second aspect of the present invention, a temperature controller is incorporated in at least one of the processing liquid guides, and a high-frequency oscillator (ultrasonic oscillator such as megasonic) is provided in at least one of the processing liquid guides. The rotary semiconductor substrate processing apparatus according to claim 1, wherein the rotary semiconductor substrate processing apparatus is configured to be incorporated.
【００１４】本出願の請求項３の発明は、半導体基板の
両面を被処理面とすることを特徴とする請求項１または
２に記載の回転式半導体基板処理装置であって、これに
より上記目的を達成するものである。The invention according to claim 3 of the present application is the rotary semiconductor substrate processing apparatus according to claim 1 or 2, wherein both surfaces of the semiconductor substrate are surfaces to be processed. Is achieved.
【００１５】本出願の請求項４の発明は、前記処理液ガ
イドから乾燥用ガスを流出し得る構成としたことを特徴
とする請求項１ないし３のいずれかに記載の回転式半導
体基板処理装置であって、これにより上記目的を達成す
るものである。The invention according to claim 4 of the present application is characterized in that a drying gas can be discharged from the processing liquid guide. Therefore, the above object is achieved thereby.
【００１６】[0016]
【作用】本発明によれば、被処理半導体基板を相対的に
回転してその被処理面を処理液により処理する回転式半
導体基板処理装置について、回転する半導体基板の上部
及び／または下部に処理液供給口（一カ所または複数）
のある処理液ガイドを配置して構成したので、これによ
り処理液が被処理面の全面に良好に生き渡る回転式半導
体基板処理装置とすることができる。According to the present invention, there is provided a rotary semiconductor substrate processing apparatus for relatively rotating a semiconductor substrate to be processed and processing the surface to be processed with a processing liquid. Liquid supply port (single or multiple)
Since the processing liquid guide having a certain property is arranged, the rotary semiconductor substrate processing apparatus in which the processing liquid favorably spreads over the entire surface to be processed can be obtained.
【００１７】また、その処理液ガイドを利用して、ここ
に温度調節器を組み込み、高周波振動子（メガソニック
など超音波発振器）を組み込む構成にでき、あるいは処
理液ガイドから乾燥用ガスを流出し得る構成とすること
などによって、処理温度を均一とし、及び／または均一
処理を可能とする構成にすることが可能なものである。Further, by utilizing the processing liquid guide, a temperature controller can be built in here and a high frequency oscillator (ultrasonic oscillator such as megasonic) can be built in, or a drying gas can be discharged from the processing liquid guide. It is possible to make the treatment temperature uniform and / or to make the uniform treatment possible by adopting such a constitution.
【００１８】[0018]
【００１９】[0019]
【実施例】以下本発明の実施例について説明する。但し
当然のことではあるが、本発明は以下の実施例により限
定を受けるものではない。EXAMPLES Examples of the present invention will be described below. However, needless to say, the present invention is not limited by the following examples.
【００２０】実施例１ この実施例は、本発明を、基本的には半導体基板の洗浄
処理装置として具体化したものであるが、同じ構造をエ
ッチング用の処理装置としても用いることができる。Embodiment 1 This embodiment basically embodies the present invention as a cleaning processing apparatus for semiconductor substrates, but the same structure can also be used as a processing apparatus for etching.
【００２１】従来の洗浄処理技術は、一般的な枚葉式ス
ピン洗浄機キャリアにセットされた半導体基板を一枚ず
つ処理チャンバーに搬送し、半導体基板を水平に保った
まま回転させ、半導体基板の上部・下部もしくは、その
両方から洗浄処理液を供給し洗浄を行い、洗浄が終了す
ると洗浄処理液と同様に純水リンス液等を供給する構成
としてある。リンスが終了すると、半導体基板の乾燥を
行うため半導体基板の回転数を高回転にして振りきり乾
燥を行う。その後、処理室より取り出されキャリアに戻
される。処理室は場合によって複数用意され、洗浄処理
液の種類や乾燥などの処理により使い分けられる場合も
ある。更に、ひとつの処理室において複数の処理液によ
る処理を連続して行う場合もある。In the conventional cleaning processing technique, semiconductor substrates set in a general single-wafer type spin cleaning machine carrier are conveyed one by one to a processing chamber, and the semiconductor substrates are rotated while being kept horizontal to rotate the semiconductor substrates. The cleaning treatment liquid is supplied from the upper part or the lower part or both to perform cleaning, and when the cleaning is completed, a pure water rinse liquid or the like is supplied in the same manner as the cleaning treatment liquid. After the rinsing is completed, the semiconductor substrate is dried by rotating the semiconductor substrate at a high rotation speed to dry the semiconductor substrate. Then, it is taken out of the processing chamber and returned to the carrier. Depending on the case, a plurality of processing chambers may be prepared and used depending on the type of cleaning processing liquid and processing such as drying. Further, there are cases where treatment with a plurality of treatment liquids is continuously performed in one treatment chamber.
【００２２】本実施例は、上記のような従来の構成に対
して、半導体基板に洗浄処理液やリンス液等の処理液を
効率良く供給して半導体基板にそれらの液体を効率良く
接触させる構造で具体化したものである。In this embodiment, in contrast to the above-described conventional structure, a treatment liquid such as a cleaning treatment liquid or a rinse liquid is efficiently supplied to the semiconductor substrate and the liquid is efficiently brought into contact with the semiconductor substrate. It was embodied in.
【００２３】図１を参照する。図１に示すように、本実
施例は、被処理半導体基板１を相対的に回転してその被
処理面（ここでは基板１の上面及び下面の両面）を処理
液（ここでは薬液や、純水等のリンス液である洗浄処理
液）により処理する回転式半導体基板処理装置（洗浄装
置）であって、回転する半導体基板１の上部や下部に処
理液供給口（一カ所または複数）のある処理液ガイド
２，３（上部処理液ガイド及び下部処理液ガイド）を配
置して構成したものである。Referring to FIG. As shown in FIG. 1, in the present embodiment, the semiconductor substrate 1 to be processed is relatively rotated so that the surface to be processed (here, both the upper surface and the lower surface of the substrate 1) is treated with a processing solution (here, a chemical solution or a pure solution). A rotary semiconductor substrate processing apparatus (cleaning apparatus) for processing with a cleaning processing solution which is a rinse solution such as water, and has processing solution supply ports (one or more) at the upper and lower parts of the rotating semiconductor substrate 1. The processing liquid guides 2 and 3 (upper processing liquid guide and lower processing liquid guide) are arranged.
【００２４】このように本実施例は、半導体基板１の両
面を被処理面とするものである。As described above, in this embodiment, both surfaces of the semiconductor substrate 1 are treated surfaces.
【００２５】また本実施例では、その処理液ガイド２，
３から乾燥用ガスを流出し得る構成としたものである。Further, in this embodiment, the processing liquid guide 2,
It is configured such that the drying gas can flow out from No. 3.
【００２６】更に詳しくは、本実施例では、図１のよう
に、ウエーハキャリアから搬送されてきた半導体基板１
（ウエーハ）は洗浄処理室の半導体基板の保持具４（ウ
エーハ保持具）にセットされる。ここで、保持具４の保
持方法や接触部分の形状及び数などは任意であり、特に
規定するものではない。More specifically, in this embodiment, as shown in FIG. 1, the semiconductor substrate 1 transferred from the wafer carrier.
The (wafer) is set on the semiconductor substrate holder 4 (wafer holder) in the cleaning processing chamber. Here, the method of holding the holder 4 and the shape and number of contact portions are arbitrary and are not particularly specified.
【００２７】この保持具４は、スピナーを兼ねており、
これは半導体基板１を保持したまま水平に回転し始め
る。上部に置かれた上部洗浄処理液ガイド２と下部の下
部洗浄処理液ガイド３も半導体基板１に対して平行に保
たれ、更に間隔を一定に保ちながら同期して回転を始め
る。This holder 4 also serves as a spinner,
This starts rotating horizontally while holding the semiconductor substrate 1. The upper cleaning processing liquid guide 2 placed on the upper part and the lower cleaning processing liquid guide 3 on the lower part are also kept parallel to the semiconductor substrate 1, and start to rotate in synchronization while keeping a constant interval.
【００２８】ここでは、半導体基板１が水平に置かれ、
水平を保ったまま回転するとしたが、半導体基板平面に
垂直な軸で回転させるならば、その軸の方向は地面に対
して傾いていても良く、その方向を規定するものではな
い。また、上部洗浄処理液ガイド２、下部洗浄処理液ガ
イド３の回転方向や回転数は半導体基板１の回転方向や
回転数と異なっていても同じでもよく（停止していても
よい）、それぞれ必要に応じて独立に設定しても何ら支
障はない。Here, the semiconductor substrate 1 is placed horizontally,
Although it is assumed that the semiconductor substrate is rotated while keeping it horizontal, if the semiconductor substrate is rotated about an axis vertical to the plane of the semiconductor substrate, the direction of the axis may be inclined with respect to the ground, and the direction is not specified. The upper cleaning treatment liquid guide 2 and the lower cleaning treatment liquid guide 3 may or may not be the same as the rotation direction and the rotation speed of the semiconductor substrate 1 (they may be stopped), and each is required. There is no problem even if it is set independently according to.
【００２９】更に、半導体基板１と不都合が起こるよう
な接触が無い限りは、上部洗浄処理液ガイド２や下部洗
浄処理液ガイド３と半導体基板１の間隔は自由に設定で
き、必ずしも半導体基板１に対して完全に平行である必
要はなく、間隔や角度は処理中に変化させても差支えな
い。また、上部洗浄処理液ガイド２、下部洗浄処理液ガ
イド３の形状や大きさは任意であり、特に限定はない。Further, as long as there is no contact with the semiconductor substrate 1 that may cause inconvenience, the spacing between the upper cleaning processing liquid guide 2 or the lower cleaning processing liquid guide 3 and the semiconductor substrate 1 can be set freely, and the semiconductor substrate 1 is not always required. They need not be perfectly parallel to each other, and the spacing and angles can be changed during processing. The shape and size of the upper cleaning processing liquid guide 2 and the lower cleaning processing liquid guide 3 are arbitrary and are not particularly limited.
【００３０】必要な回転数まで達した後、洗浄用の処理
液５，５′が上部洗浄処理液ガイド２及び下部薬液ガイ
ド３の中心から供給されると洗浄処理液５，５′は半導
体基板１と上部洗浄処理液ガイド２あるいは下部洗浄処
理液ガイド３の間に満たされ、半導体基板１の洗浄が開
始される。中心部より供給された洗浄処理液５，５′
は、供給による圧力と半導体基板１及び上部洗浄処理液
ガイド２もしくは下部洗浄処理液ガイド３と接触して回
転することによる遠心力によって、半導体基板１の表面
上を同径方向外側に流れて行く。更に流れて行くと、半
導体基板１の端より排液される。After the required number of rotations has been reached, the cleaning treatment liquids 5 and 5'are supplied from the centers of the upper cleaning treatment liquid guide 2 and the lower chemical treatment liquid guide 3, and the cleaning treatment liquids 5 and 5'will become semiconductor substrates. 1 and the upper cleaning processing liquid guide 2 or the lower cleaning processing liquid guide 3 are filled, and cleaning of the semiconductor substrate 1 is started. Cleaning treatment liquid 5, 5'supplied from the center
Flows toward the outer side in the same radial direction on the surface of the semiconductor substrate 1 due to the pressure due to the supply and the centrifugal force caused by the contact and rotation of the semiconductor substrate 1 and the upper cleaning treatment liquid guide 2 or the lower cleaning treatment liquid guide 3. . When it further flows, the liquid is drained from the end of the semiconductor substrate 1.
【００３１】ここでは必要な回転数まで回転が達したと
きに洗浄処理液５，５′が供給される構成としたが、供
給のタイミングには限定はない。また、処理液供給は、
上部洗浄処理液ガイド２もしくは下部洗浄処理液ガイド
３の中心一カ所に限定するものではなく、複数の部分か
ら供給してもよい。処理中（洗浄中）の回転数は一定で
なくてもよく、回転速度を規定するものではない。Although the cleaning treatment liquids 5 and 5'are supplied when the number of rotations reaches the required number of rotations here, the supply timing is not limited. Also, the processing liquid supply is
The upper cleaning treatment liquid guide 2 or the lower cleaning treatment liquid guide 3 is not limited to one central portion, but may be supplied from a plurality of portions. The rotation speed during processing (during cleaning) does not have to be constant and does not regulate the rotation speed.
【００３２】本実施例では、洗浄処理液ガイド２，３か
ら乾燥用ガスを流出し得る構成とし、具体的には乾燥時
に、洗浄処理液ガイド２，３の中心から乾燥用のガス例
えば窒素ガスや不活性ガスを供給する構成とした。これ
によれば乾燥効率を向上できるし、いわゆるウォーター
マークやウォータースポットと称されている処理液残り
により生ずるしみや汚れ等ををなくすこともできる。In the present embodiment, the drying gas is allowed to flow out from the cleaning treatment liquid guides 2 and 3. Specifically, at the time of drying, a drying gas such as nitrogen gas is supplied from the center of the cleaning treatment liquid guides 2 and 3. Or an inert gas is supplied. According to this, it is possible to improve the drying efficiency, and it is also possible to eliminate stains, stains, etc., which are so-called watermarks and water spots, which are caused by the residual treatment liquid.
【００３３】本実施例において、上部洗浄処理液ガイド
２、下部洗浄処理液３の回転及び回転方向、半導体基板
１との間隔は、洗浄時や乾燥時などそれぞれに応じて、
それらの処理中においても変化させてもよい。In the present embodiment, the rotation and direction of rotation of the upper cleaning treatment liquid guide 2 and the lower cleaning treatment liquid 3 and the distance between the upper cleaning treatment liquid guide 2 and the semiconductor substrate 1 are different depending on the time of washing and the time of drying.
It may be changed during the processing.
【００３４】本実施例によれば、半導体基板の上方及び
下方に洗浄処理液ガイドを配置する構成としたことで、
下記のような具体的効果が発揮される。 半導体基板表面、裏面での薬液の置換効率が向上する
ため、洗浄効果が向上する。 洗浄用の処理液が外気に接触しないため、処理液であ
る薬液や純水への酸素の溶け込みが防止でき、溶存酸素
のコントロールが容易になる。 乾燥時に洗浄処理液ガイドの中心から乾燥用のガス例
えば窒素ガスや不活性ガスを供給することで、乾燥効率
の向上を達成でき、またウォーターマーク（ウォーター
スポット）をなくすことができる。 半導体基板洗浄時の洗浄処理液（薬液等）の使用量が
低減できる。 上下の洗浄処理液ガイドで半導体基板が隔離されるた
め、環境中の汚染物質の影響や周囲に飛散した薬液の跳
ね返りなどによる影響がない。また、半導体基板洗浄中
においても処理室の洗浄が可能である。According to the present embodiment, the cleaning treatment liquid guide is arranged above and below the semiconductor substrate.
The following concrete effects are exhibited. Since the efficiency of chemical replacement on the front and back surfaces of the semiconductor substrate is improved, the cleaning effect is improved. Since the treatment liquid for cleaning does not come into contact with the outside air, it is possible to prevent the dissolution of oxygen into the chemical liquid or pure water, which is the treatment liquid, and to easily control the dissolved oxygen. By supplying a drying gas, for example, a nitrogen gas or an inert gas, from the center of the cleaning treatment liquid guide at the time of drying, it is possible to improve the drying efficiency and eliminate the watermark (water spot). The amount of cleaning treatment liquid (chemical liquid or the like) used for cleaning the semiconductor substrate can be reduced. Since the semiconductor substrate is isolated by the upper and lower cleaning treatment liquid guides, there is no influence of pollutants in the environment or splashing of chemical liquid scattered around. Further, the processing chamber can be cleaned even during the cleaning of the semiconductor substrate.
【００３５】上記実施例は、上述した具体的な構造につ
いて、更に種々変形を加えることができる。例えば上記
の説明では、半導体基板１上下に上部洗浄処理液ガイド
２、下部洗浄処理液ガイド３を設置したが、用途によっ
てどちらか一方のみを設置してもよい。The above embodiment can be modified in various ways with respect to the specific structure described above. For example, in the above description, the upper cleaning processing liquid guide 2 and the lower cleaning processing liquid guide 3 are installed above and below the semiconductor substrate 1, but either one may be installed depending on the application.
【００３６】上部洗浄処理液ガイド２、下部洗浄処理液
ガイド３の半導体基板１に対向する面の構造及び形状に
ついては、平面ではなく、例えば下記のような構成にす
ることもできる。 ｉ）積極的に洗浄処理液をウェーハ外周に流すための凹
凸を付ける。 ｉｉ）上部洗浄処理液ガイド２や下部洗浄処理液ガイド
３と半導体基板１の間の洗浄処理液を攪拌する目的で凹
凸を付ける。The structure and shape of the surfaces of the upper cleaning processing liquid guide 2 and the lower cleaning processing liquid guide 3 facing the semiconductor substrate 1 may be, for example, the following configurations instead of flat surfaces. i) Providing irregularities for positively flowing the cleaning treatment liquid to the outer periphery of the wafer. ii) The unevenness is formed for the purpose of stirring the cleaning treatment liquid between the upper cleaning treatment liquid guide 2 and the lower cleaning treatment liquid guide 3 and the semiconductor substrate 1.
【００３７】例えば、図２（ａ）に示すのは上記ｉ）を
適用して、処理液を流出させるための溝２１を弧状に形
成したものである。For example, as shown in FIG. 2 (a), the above-mentioned i) is applied to form a groove 21 for letting out the processing liquid in an arc shape.
【００３８】図２（ｂ）に示すのは、上面に仕切り状の
凸部２２を形成した例である。FIG. 2B shows an example in which a partition-shaped convex portion 22 is formed on the upper surface.
【００３９】また、上部洗浄処理液ガイド２や下部洗浄
処理液ガイド３の回転軸は、半導体基板１の回転軸とを
故意に偏芯させ、洗浄効果を向上させる構成にできる。
このような例を、図３に断面で示し、図４に平面で示
す。図示例は、上部処理液ガイド２を半導体基板１の回
転中心からずらした例である。The rotation axes of the upper cleaning treatment liquid guide 2 and the lower cleaning treatment liquid guide 3 can be intentionally eccentric with respect to the rotation shaft of the semiconductor substrate 1 to improve the cleaning effect.
Such an example is shown in section in FIG. 3 and in plan in FIG. The illustrated example is an example in which the upper processing liquid guide 2 is displaced from the rotation center of the semiconductor substrate 1.
【００４０】上記に述べた洗浄処理液による処理装置
は、酸化膜などの薬液によるエッチングに対しても有効
であり、これを用いると、エッチングレートの面内均一
性向上やエッチングレート向上に効果がある。The treatment apparatus using the cleaning treatment liquid described above is also effective for etching with a chemical liquid such as an oxide film, and when it is used, it is effective in improving the in-plane uniformity of the etching rate and the etching rate. is there.
【００４１】このような場合も、乾燥時に、薬液供給口
もしくは専用の供給口より窒素ガスなどを供給すること
で、乾燥効率の向上やウォーターマーク（ウォータース
ポット）をなくすことができる。In such a case as well, by supplying nitrogen gas or the like from the chemical solution supply port or a dedicated supply port during drying, it is possible to improve the drying efficiency and eliminate the watermark (water spot).
【００４２】実施例２ この実施例は、処理液ガイドの少なくともいずれかに温
度調節器を組み込み、かつ、処理液ガイドの少なくとも
いずれかに温度調節器を組み込み、かつ、処理液ガイド
の少なくともいずれかに高周波振動子（メガソニックな
ど超音波発振器）を組み込む構成としたものである。即
ち本実施例は、半導体基板に洗浄処理液やリンス液等の
処理液を効率良く供給して半導体基板にそれらの液体を
効率良く接触させる構造にするとともに、それのみなら
ず、処理温度をコントロールでき、また洗浄を効率良く
行うため取付位置を改良して振動子を配置した構成とし
たものである。本実施例も、洗浄装置や、エッチング処
理装置など各種の処理に適用できる。Embodiment 2 In this embodiment, a temperature controller is incorporated in at least one of the treatment liquid guides, and a temperature controller is incorporated in at least one of the treatment liquid guides, and at least one of the treatment liquid guides. High frequency oscillator (ultrasonic oscillator such as megasonic) is configured to be incorporated. That is, the present embodiment has a structure in which a processing liquid such as a cleaning liquid or a rinse liquid is efficiently supplied to the semiconductor substrate to bring the liquid into contact with the semiconductor substrate efficiently, and in addition to that, the processing temperature is controlled. In addition, in order to perform the cleaning efficiently, the mounting position is improved and the vibrator is arranged. This embodiment can also be applied to various kinds of processing such as a cleaning apparatus and an etching processing apparatus.
【００４３】具体的には本実施例は、図５に示すよう
に、図１に示した実施例１の構造における上部（洗浄）
処理液ガイド２、及び下部（洗浄）処理液ガイド３に、
振動子６、温度調節器７を組み込んだ構造とした。本実
施例も動作は実施例１と同様であるが、洗浄処理やリン
ス時に、温度調節及び振動子が作用し、洗浄処理効果を
向上させる。なおここで、振動子６、温度調節器７は各
上部（洗浄）処理液ガイド２、下部（洗浄）処理液ガイ
ド３に組み込んでいるが、それぞれ単独あるいは組み合
わせて設置してもよい。また、設置の位置関係は任意で
あり、どのような構造であってもよい。Specifically, in this embodiment, as shown in FIG. 5, the upper part (cleaning) in the structure of the first embodiment shown in FIG.
In the processing liquid guide 2 and the lower (cleaning) processing liquid guide 3,
The structure is one in which the vibrator 6 and the temperature controller 7 are incorporated. The operation of this embodiment is similar to that of the first embodiment, but the temperature control and the vibrator act during the cleaning process and the rinsing to improve the cleaning process effect. Although the vibrator 6 and the temperature controller 7 are incorporated in the upper (cleaning) processing liquid guide 2 and the lower (cleaning) processing liquid guide 3, respectively, they may be installed individually or in combination. Moreover, the positional relationship of installation is arbitrary, and may have any structure.
【００４４】処理液ガイドに温度調節用として例えば加
熱機構を組み込むことによって、洗浄処理液や、エッチ
ング処理装置として用いる場合などそのエッチング液等
の温度が均一になり、洗浄の均一性の向上やエッチング
均一性が向上する。By incorporating, for example, a heating mechanism for adjusting the temperature in the treatment liquid guide, the temperature of the cleaning treatment liquid and the etching liquid when used as an etching treatment apparatus becomes uniform, improving the uniformity of cleaning and etching. Uniformity is improved.
【００４５】更に、処理液ガイドに振動子（メガソニッ
クなど）を付け加えることで、洗浄効果等の向上が可能
になる。Furthermore, by adding a vibrator (such as Megasonic) to the treatment liquid guide, the cleaning effect and the like can be improved.
【００４６】本実施例において、振動子６は半導体基板
１全体を覆うように配置することが望ましいが、上部
（洗浄）処理液ガイド２、下部（洗浄）処理液ガイド３
が回転しない構造あるいは半導体基板１の回転と回転方
向が違う場合には、上部（洗浄）処理液ガイド２、下部
（洗浄）処理液ガイド３の一部に振動子６を組み込むこ
とで半導体基板１全体に振動を与えることができる。In this embodiment, the vibrator 6 is preferably arranged so as to cover the entire semiconductor substrate 1, but the upper (cleaning) processing liquid guide 2 and the lower (cleaning) processing liquid guide 3 are provided.
If the structure does not rotate or the rotation direction of the semiconductor substrate 1 is different from that of the semiconductor substrate 1, the oscillator 6 is incorporated into a part of the upper (cleaning) processing liquid guide 2 and the lower (cleaning) processing liquid guide 3 to form the semiconductor substrate 1 Vibration can be given to the whole.
【００４７】振動子６や温度調節器７がついた上部（洗
浄）処理液ガイド２、下部（洗浄）処理液ガイド３の形
状は、前記説明した図２のように、洗浄処理液やリンス
液等の処理液を効率よく攪拌するような形状や効率よく
置換させるような形状としてもよい。The shapes of the upper (washing) treatment liquid guide 2 and the lower (washing) treatment liquid guide 3 provided with the vibrator 6 and the temperature controller 7 are the same as those of FIG. 2 described above. It may have a shape such that the treatment liquid such as the above is efficiently stirred or a shape that is efficiently replaced.
【００４８】[0048]
【発明の効果】上述したように、本発明によれば、処理
液が被処理面の全面に良好に行き渡る回転式半導体基板
処理装置を提供することができた。また、本発明は、処
理温度を均一とし、及び／または均一処理を可能とする
構成にできるものである。As described above, according to the present invention, it is possible to provide the rotary semiconductor substrate processing apparatus in which the processing liquid is well spread over the entire surface to be processed. Further, the present invention can be configured such that the processing temperature is uniform and / or uniform processing is possible.
【図１】本発明の実施例１を示す構成図である。FIG. 1 is a configuration diagram showing a first embodiment of the present invention.
【図２】変形例を示す図である。FIG. 2 is a diagram showing a modified example.
【図３】変形例を示す図である。FIG. 3 is a diagram showing a modified example.
【図４】変形例を示す図である。FIG. 4 is a diagram showing a modified example.
【図５】本発明の実施例２を示す構成図である。FIG. 5 is a configuration diagram showing a second embodiment of the present invention.
【図６】従来の技術を説明した図である。FIG. 6 is a diagram illustrating a conventional technique.
１ （被処理）半導体基板 ２ （上部洗浄）処理液ガイド ３ （下部洗浄）処理液ガイド ４ （半導体基板）保持具（スピナー兼用） ５，５′ 処理液（薬液やリンス液等の洗浄処理液、エ
ッチング処理液） ６ 振動子（メガソニック発振器） ７ 温度調節器1 (processing target) semiconductor substrate 2 (upper cleaning) processing liquid guide 3 (lower cleaning) processing liquid guide 4 (semiconductor substrate) holder (also used as spinner) 5,5 'processing liquid (cleaning processing liquid such as chemical liquid or rinse liquid) , Etching solution) 6 Transducer (Megasonic oscillator) 7 Temperature controller
Claims (4)
被処理面を処理液により処理する回転式半導体基板処理
装置において、 回転する半導体基板の上部及び／または下部に処理液供
給口のある処理液ガイドを配置して構成した回転式半導
体基板処理装置。1. A rotary semiconductor substrate processing apparatus for relatively rotating a semiconductor substrate to be processed to process a surface to be processed with a processing liquid, wherein a processing liquid supply port is provided above and / or below the rotating semiconductor substrate. A rotary semiconductor substrate processing apparatus configured by arranging a processing liquid guide.
温度調節器を組み込み、かつ、処理液ガイドの少なくと
もいずれかに高周波振動子を組み込む構成としたことを
特徴とする請求項１に記載の回転式半導体基板処理装
置。2. The rotation according to claim 1, wherein a temperature controller is incorporated in at least one of the treatment liquid guides, and a high-frequency oscillator is incorporated in at least one of the treatment liquid guides. Type semiconductor substrate processing apparatus.
特徴とする請求項１または２に記載の回転式半導体基板
処理装置。3. The rotary semiconductor substrate processing apparatus according to claim 1, wherein both surfaces of the semiconductor substrate are surfaces to be processed.
得る構成としたことを特徴とする請求項１ないし３のい
ずれかに記載の回転式半導体基板処理装置。4. The rotary semiconductor substrate processing apparatus according to claim 1, wherein the drying gas can flow out from the processing liquid guide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26698594A JP3326656B2 (en) | 1994-10-31 | 1994-10-31 | Rotary semiconductor substrate processing apparatus and rotary semiconductor substrate processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26698594A JP3326656B2 (en) | 1994-10-31 | 1994-10-31 | Rotary semiconductor substrate processing apparatus and rotary semiconductor substrate processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08130202A true JPH08130202A (en) | 1996-05-21 |
| JP3326656B2 JP3326656B2 (en) | 2002-09-24 |
Family
ID=17438462
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|---|---|---|---|
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| JP2003282514A (en) * | 2002-03-25 | 2003-10-03 | Tokyo Electron Ltd | Substrate treatment equipment and substrate treatment method |
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| WO1999020407A1 (en) * | 1997-10-22 | 1999-04-29 | Hitachi, Ltd. | Apparatus for treating plate type part with fluid |
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