KR100504062B1 - 스퍼터 타겟, 배리어막 및 전자 부품 - Google Patents
스퍼터 타겟, 배리어막 및 전자 부품 Download PDFInfo
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- KR100504062B1 KR100504062B1 KR10-2002-7014056A KR20027014056A KR100504062B1 KR 100504062 B1 KR100504062 B1 KR 100504062B1 KR 20027014056 A KR20027014056 A KR 20027014056A KR 100504062 B1 KR100504062 B1 KR 100504062B1
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- film
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- sputter target
- barrier film
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- 230000004888 barrier function Effects 0.000 title claims abstract description 59
- 239000000956 alloy Substances 0.000 claims abstract description 107
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 103
- 229910004349 Ti-Al Inorganic materials 0.000 claims abstract description 91
- 229910004692 Ti—Al Inorganic materials 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000013078 crystal Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000006104 solid solution Substances 0.000 claims abstract description 25
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 19
- 229910018509 Al—N Inorganic materials 0.000 claims abstract 5
- 239000010408 film Substances 0.000 claims description 158
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- 239000001301 oxygen Substances 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 29
- 239000003990 capacitor Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 description 40
- 238000002844 melting Methods 0.000 description 24
- 230000008018 melting Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 19
- 239000000428 dust Substances 0.000 description 16
- 238000004090 dissolution Methods 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- 229910052719 titanium Inorganic materials 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 10
- 238000002441 X-ray diffraction Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 230000015654 memory Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 229910021362 Ti-Al intermetallic compound Inorganic materials 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000011978 dissolution method Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000005204 segregation Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910010038 TiAl Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000005477 sputtering target Methods 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005098 hot rolling Methods 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910016062 BaRuO Inorganic materials 0.000 description 1
- 229910002848 Pt–Ru Inorganic materials 0.000 description 1
- 229910018967 Pt—Rh Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7687—Thin films associated with contacts of capacitors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (18)
- Ti-Al 합금에 의해 구성된 스퍼터 타겟이며,상기 Ti-Al 합금 중의 Al은, Ti 속에 고용한 상태, 및 Ti와 금속간 화합물을 형성한 상태 중 적어도 한 쪽 상태로 존재하고 있고, 또한 타겟 전체적으로 Al 함유량의 변동이 10% 이내이며, 상기 Al 함유량의 변동은 변동(%)={(최대치-최소치)/(최대치+최소치)}×100의 식에 의해 구하는 것을 특징으로 하는 스퍼터 타겟.
- 제1항에 있어서, 상기 Ti-Al 합금은 1 내지 30 원자 % 범위의 Al을 함유하는 것을 특징으로 하는 스퍼터 타겟.
- 제1항에 있어서, 상기 Ti-Al 합금은 500 ㎛ 이하의 평균 결정 입경을 갖는 것을 특징으로 하는 스퍼터 타겟.
- 제3항에 있어서, 타겟 전체적으로 결정 입경의 변동이 30 % 이내인 것을 특징으로 하는 스퍼터 타겟.
- 제1항에 있어서, 상기 Ti-Al 합금의 평균 산소 함유량이 900 ppm 이하인 것을 특징으로 하는 스퍼터 타겟.
- 제5항에 있어서, 타겟 전체적으로 산소 함유량의 변동이 30 % 이내인 것을 특징으로 하는 스퍼터 타겟.
- 제1항에 있어서, 상기 스퍼터 타겟은 배킹 플레이트와 접합되어 있는 것을 특징으로 하는 스퍼터 타겟.
- Al을 1 내지 30 원자 %의 범위에서 함유하는 Ti-Al 합금에 의해 구성된 스퍼터 타겟이며,상기 Ti-Al 합금 중의 Al은, Ti 속에 고용한 상태, 및 Ti와 금속간 화합물을 형성한 상태 중 적어도 한 쪽 상태로 존재하고 있고, 또한 상기 Ti-Al 합금의 평균 결정 입경이 500 ㎛ 이하인 동시에, 타겟 전체적으로 결정 입경의 변동이 30% 이내이며, 상기 결정 입경의 변동은 변동(%)={(최대치-최소치)/(최대치+최소치)}×100의 식에 의해 구하는 것을 특징으로 하는 스퍼터 타겟.
- 삭제
- 제8항에 있어서, 상기 스퍼터 타겟은 배킹 플레이트와 접합되어 있는 것을 특징으로 하는 스퍼터 타겟.
- 제1항에 기재된 스퍼터 타겟을 이용하여 성막하여 이루어지는 Ti-Al-N막을 구비하는 것을 특징으로 하는 배리어막.
- 제11항에 있어서, 상기 Ti-Al-N막은 반도체 기판에 대한 배리어재로서 이용되는 것을 특징으로 하는 배리어막.
- 제8항에 기재된 스퍼터 타겟을 이용하여 성막하여 이루어지는 Ti-Al-N막을 구비하는 것을 특징으로 하는 배리어막.
- 제13항에 있어서, 상기 Ti-Al-N막은 반도체 기판에 대한 배리어재로서 이용되는 것을 특징으로 하는 배리어막.
- 제11항에 기재된 배리어막을 구비하는 것을 특징으로 하는 전자 부품.
- 제15항에 있어서, 반도체 기판과, 상기 반도체 기판 상에 형성된 상기 배리어막과, 상기 배리어막 상에 형성된 박막 캐패시터를 구비하는 것을 특징으로 하는 전자 부품.
- 제13항에 기재된 배리어막을 구비하는 것을 특징으로 하는 전자 부품.
- 제17항에 있어서, 반도체 기판과, 상기 반도체 기판 상에 형성된 상기 배리어막과, 상기 배리어막 상에 형성된 박막 캐패시터를 구비하는 것을 특징으로 하는 전자 부품.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2000-00119539 | 2000-04-20 | ||
JP2000119539 | 2000-04-20 | ||
PCT/JP2001/003379 WO2001081650A1 (fr) | 2000-04-20 | 2001-04-20 | Cible de pulverisation, film barriere et composant electronique |
Publications (2)
Publication Number | Publication Date |
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KR20030032937A KR20030032937A (ko) | 2003-04-26 |
KR100504062B1 true KR100504062B1 (ko) | 2005-07-27 |
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Application Number | Title | Priority Date | Filing Date |
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KR10-2002-7014056A KR100504062B1 (ko) | 2000-04-20 | 2001-04-20 | 스퍼터 타겟, 배리어막 및 전자 부품 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6750542B2 (ko) |
JP (2) | JP5065565B2 (ko) |
KR (1) | KR100504062B1 (ko) |
TW (1) | TWI256420B (ko) |
WO (1) | WO2001081650A1 (ko) |
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US7427538B2 (en) * | 2002-08-16 | 2008-09-23 | Intel Corporation | Semiconductor on insulator apparatus and method |
JP3873935B2 (ja) * | 2003-06-18 | 2007-01-31 | セイコーエプソン株式会社 | 強誘電体メモリ素子 |
KR100633330B1 (ko) * | 2004-07-30 | 2006-10-12 | 주식회사 하이닉스반도체 | 반도체 장치의 캐패시터 제조방법 |
JP4802780B2 (ja) * | 2006-03-14 | 2011-10-26 | セイコーエプソン株式会社 | 強誘電体メモリ装置、強誘電体メモリ装置の製造方法 |
JP4613857B2 (ja) * | 2006-03-14 | 2011-01-19 | セイコーエプソン株式会社 | 強誘電体メモリ装置、強誘電体メモリ装置の製造方法 |
KR100842897B1 (ko) * | 2007-01-29 | 2008-07-03 | 삼성전자주식회사 | 강유전체 하드디스크드라이브용 강유전체 미디어 구조 및그 제조 방법 |
JP4320679B2 (ja) * | 2007-02-19 | 2009-08-26 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
WO2014148424A1 (ja) * | 2013-03-19 | 2014-09-25 | Jx日鉱日石金属株式会社 | Ti-Al合金スパッタリングターゲット |
WO2015186413A1 (ja) | 2014-06-02 | 2015-12-10 | 三菱日立ツール株式会社 | 硬質皮膜、硬質皮膜被覆部材、それらの製造方法、及び硬質皮膜の製造に用いるターゲット |
JP6574714B2 (ja) * | 2016-01-25 | 2019-09-11 | 株式会社コベルコ科研 | 配線構造およびスパッタリングターゲット |
EP3418422B1 (en) * | 2016-03-25 | 2022-06-22 | JX Nippon Mining & Metals Corporation | Ti-nb alloy sputtering target and method for manufacturing same |
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JPH06280009A (ja) | 1993-03-30 | 1994-10-04 | Mitsubishi Materials Corp | スパッタリング用ターゲット及びその製造方法 |
JP2857015B2 (ja) * | 1993-04-08 | 1999-02-10 | 株式会社ジャパンエナジー | 高純度アルミニウムまたはその合金からなるスパッタリングターゲット |
JPH06322530A (ja) | 1993-05-10 | 1994-11-22 | Vacuum Metallurgical Co Ltd | スパッタリング用ターゲット |
JP2901049B2 (ja) * | 1994-11-15 | 1999-06-02 | 株式会社神戸製鋼所 | アークイオンプレーティング用Al−Ti合金ターゲット材 |
JPH116056A (ja) * | 1997-06-12 | 1999-01-12 | Toshiba Tungaloy Co Ltd | 金属間化合物含有ターゲット、およびこれを用いた硬質被覆部材の製造方法 |
JP3367600B2 (ja) * | 1998-06-08 | 2003-01-14 | シャープ株式会社 | 誘電体薄膜素子の製造方法 |
JP2000100755A (ja) | 1998-09-25 | 2000-04-07 | Mitsubishi Materials Corp | 半導体装置のバリア膜形成用Ti−Al合金スパッタリングターゲット |
JP2000273623A (ja) | 1999-03-29 | 2000-10-03 | Japan Energy Corp | Ti−Al合金スパッタリングターゲット |
JP4203180B2 (ja) | 1999-05-25 | 2008-12-24 | 株式会社神戸製鋼所 | Ti−Al合金スパッタリングターゲット及びその製造方法 |
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JP5487182B2 (ja) | 2014-05-07 |
US20030116849A1 (en) | 2003-06-26 |
KR20030032937A (ko) | 2003-04-26 |
JP5065565B2 (ja) | 2012-11-07 |
TWI256420B (en) | 2006-06-11 |
US6750542B2 (en) | 2004-06-15 |
WO2001081650A1 (fr) | 2001-11-01 |
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