KR100498682B1 - 칩형 전자 부품 - Google Patents
칩형 전자 부품 Download PDFInfo
- Publication number
- KR100498682B1 KR100498682B1 KR10-2003-0062608A KR20030062608A KR100498682B1 KR 100498682 B1 KR100498682 B1 KR 100498682B1 KR 20030062608 A KR20030062608 A KR 20030062608A KR 100498682 B1 KR100498682 B1 KR 100498682B1
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- Prior art keywords
- glass
- alkali metal
- electronic component
- ceramic
- glass layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed as one or more layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Thermistors And Varistors (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Glass Compositions (AREA)
Abstract
Description
시료번호 | 조성(mol%) | 조성식 | 알칼리금속량(atom%) | ||||
제 1 알칼리 금속원소 | 제 2 알칼리 금속원소 | SiO2 | |||||
*1 | Li | 4 | K | 4 | 92 | 4(Li2O)4(K2O)92(SiO2) | 14.8 |
*2 | Li | 5 | K | 5 | 90 | 5(Li2O)5(K2O)90(SiO2) | 18.2 |
3 | Li | 6 | K | 6 | 88 | 6(Li2O)6(K2O)88(SiO2) | 21.4 |
4 | Li | 8 | K | 8 | 84 | 8(Li2O)8(K2O)84(SiO2) | 27.6 |
5 | Li | 10 | K | 10 | 80 | 10(Li2O)10(K2O)80(SiO2) | 33.3 |
6 | Li | 15 | K | 15 | 70 | 15(Li2O)15(K2O)70(SiO2) | 46.2 |
*7 | Li | 20 | - | 0 | 80 | 20(Li2O)80(SiO2) | 33.3 |
*8 | K | 20 | - | 0 | 80 | 20(K2O)80(SiO2) | 33.3 |
*9 | Na | 20 | - | 0 | 80 | 20(Na2O)80(SiO2) | 33.3 |
*10 | Na | 4 | K | 4 | 92 | 4(Na2O)4(K2O)92(SiO2) | 14.8 |
*11 | Na | 5 | K | 5 | 90 | 5(Na2O)5(K2O)90(SiO2) | 18.2 |
12 | Na | 6 | K | 6 | 88 | 6(Na2O)6(K2O)88(SiO2) | 21.4 |
13 | Na | 10 | K | 10 | 80 | 10(Na2O)10(K2O)80(SiO2) | 33.3 |
14 | Li | 17 | K | 3 | 80 | 17(Li2O)3(K2O)80(SiO2) | 33.3 |
15 | Li | 16 | K | 4 | 80 | 16(Li2O)4(K2O)80(SiO2) | 33.3 |
16 | Li | 15 | K | 5 | 80 | 15(Li2O)5(K2O)80(SiO2) | 33.3 |
17 | Li | 5 | K | 15 | 80 | 5(Li2O)15(K2O)80(SiO2) | 33.3 |
18 | Li | 4 | K | 16 | 80 | 4(Li2O)16(K2O)80(SiO2) | 33.3 |
19 | Li | 3 | K | 17 | 80 | 3(Li2O)17(K2O)80(SiO2) | 33.3 |
시료 번호 | 유리의 균열의유무 | 도금액의 침입세라믹 소체중의 Sn량(ppm) | 내전압(V) |
*1 | 있음 | 65 | 6 |
*2 | 있음 | 25 | 15 |
3 | 없음 | ≤10 | 23 |
4 | 없음 | ≤10 | 24 |
5 | 없음 | ≤10 | 23 |
6 | 없음 | ≤10 | 22 |
*7 | 없음 | ≤10 | 12 |
*8 | 없음 | ≤10 | 13 |
*9 | 없음 | ≤10 | 12 |
*10 | 있음 | 45 | 8 |
*11 | 있음 | 20 | 13 |
12 | 없음 | ≤10 | 20 |
13 | 없음 | ≤10 | 20 |
14 | 없음 | ≤10 | 15 |
15 | 없음 | ≤10 | 22 |
16 | 없음 | ≤10 | 22 |
17 | 없음 | ≤10 | 22 |
18 | 없음 | ≤10 | 22 |
19 | 없음 | ≤10 | 16 |
Claims (4)
- 세라믹 소체(素體)의 표면에 형성되는 단자 전극의 표면에, 도금막이 형성되어 이루어지는 칩형 전자 부품으로서,상기 세라믹 소체의 표면 중에서 적어도 상기 단자 전극이 형성되어 있지 않은 부분에 유리층이 형성되고,상기 유리층이 되는 유리에, Li, Na, 및 K에서 선택되는 알칼리 금속 원소 중 적어도 2종류가 포함되어 있으며, 또한 상기 알칼리 금속 원소의 원자 총량이 상기 유리의 산소를 제외하는 원자 총량 중 20atom%이상 포함되는 것을 특징으로 하는 칩형 전자 부품.
- 제 1 항에 있어서, 상기 알칼리 금속 원소로서, 적어도 Li와 K가 포함되는 것을 특징으로 하는 칩형 전자 부품.
- 제 1 항 또는 제 2 항에 있어서, 유리층에 포함되는 알칼리 금속 원소 중, 함유량이 많은 상위 2종류의 알칼리 금속 원소의 원자비가 2:8∼8:2인 것을 특징으로 하는 칩형 전자 부품.
- 제 1 항 또는 제 2 항에 있어서, 상기 세라믹 소체가 반도체 세라믹으로 구성되어 있는 것을 특징으로 하는 칩형 전자 부품.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00264579 | 2002-09-10 | ||
JP2002264579 | 2002-09-10 | ||
JPJP-P-2003-00289321 | 2003-08-07 | ||
JP2003289321A JP4311124B2 (ja) | 2002-09-10 | 2003-08-07 | チップ型電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040023757A KR20040023757A (ko) | 2004-03-18 |
KR100498682B1 true KR100498682B1 (ko) | 2005-07-01 |
Family
ID=31996133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-0062608A KR100498682B1 (ko) | 2002-09-10 | 2003-09-08 | 칩형 전자 부품 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6791163B2 (ko) |
JP (1) | JP4311124B2 (ko) |
KR (1) | KR100498682B1 (ko) |
CN (1) | CN1303621C (ko) |
TW (1) | TWI239020B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101444678B1 (ko) | 2007-06-12 | 2014-09-26 | 티디케이가부시기가이샤 | 적층형 ptc 서미스터 및 이의 제조방법 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100586963B1 (ko) * | 2004-05-04 | 2006-06-08 | 삼성전기주식회사 | 유전체 형성용 조성물, 이로 제조된 캐패시터층 및 이를포함하는 인쇄회로기판 |
KR100611188B1 (ko) * | 2004-07-26 | 2006-08-10 | 조인셋 주식회사 | 어레이형 다중 칩 부품 및 이의 제조방법 |
JP4227597B2 (ja) * | 2005-04-01 | 2009-02-18 | Tdk株式会社 | バリスタ |
EP2015318B1 (en) | 2007-06-12 | 2012-02-29 | TDK Corporation | Stacked PTC thermistor and process for its production |
JP2009200168A (ja) * | 2008-02-20 | 2009-09-03 | Tdk Corp | セラミック電子部品、セラミック電子部品の製造方法、及びセラミック電子部品の梱包方法 |
JP4998800B2 (ja) * | 2008-07-17 | 2012-08-15 | Tdk株式会社 | 積層チップバリスタおよびその製造方法 |
JP5287658B2 (ja) * | 2008-11-14 | 2013-09-11 | 株式会社村田製作所 | セラミック電子部品 |
CN101789294B (zh) * | 2009-12-16 | 2012-03-07 | 深圳顺络电子股份有限公司 | 电子元件及其制作方法 |
JP5212660B2 (ja) * | 2010-08-04 | 2013-06-19 | Tdk株式会社 | 積層型セラミックptc素子の製造方法 |
JP5218499B2 (ja) * | 2010-08-23 | 2013-06-26 | Tdk株式会社 | セラミック積層電子部品の製造方法 |
JP5304757B2 (ja) * | 2010-09-06 | 2013-10-02 | Tdk株式会社 | セラミック積層ptcサーミスタ |
DE112013005441B4 (de) | 2012-11-15 | 2022-01-05 | Murata Manufacturing Co., Ltd. | Thermistor mit positivem Temperaturkoeffizienten und Herstellungsverfahren für denselben |
US9428680B2 (en) | 2013-03-14 | 2016-08-30 | Dow Corning Corporation | Conductive silicone materials and uses |
KR102250406B1 (ko) | 2013-03-14 | 2021-05-12 | 다우 실리콘즈 코포레이션 | 경화성 실리콘 조성물, 전기 전도성 실리콘 접착제, 이의 제조 및 사용 방법, 및 이를 포함하는 전기 디바이스 |
WO2020040197A1 (ja) * | 2018-08-23 | 2020-02-27 | 三菱マテリアル株式会社 | 保護膜付きサーミスタおよびその製造方法 |
US11600410B2 (en) | 2018-08-23 | 2023-03-07 | Mitsubishi Materials Corporation | Thermistor with protective film and manufacturing method thereof |
JP7268393B2 (ja) * | 2019-02-22 | 2023-05-08 | 三菱マテリアル株式会社 | サーミスタの製造方法 |
CN112802647B (zh) * | 2021-01-13 | 2021-11-23 | 江苏新林芝电子科技股份有限公司 | 一种耐还原性气氛强的正温度系数陶瓷热敏电阻元件及其制备方法 |
WO2024100941A1 (ja) * | 2022-11-11 | 2024-05-16 | 株式会社村田製作所 | 電子部品 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0878208A (ja) * | 1994-06-30 | 1996-03-22 | Tdk Corp | ガラス封止型サーミスタ素子およびその製造方法 |
JPH08115804A (ja) * | 1994-10-14 | 1996-05-07 | Murata Mfg Co Ltd | 表面実装型セラミック電子部品とその製造方法 |
JPH08264372A (ja) * | 1995-03-17 | 1996-10-11 | Taiyo Yuden Co Ltd | 無電解メッキ膜付電子部品の製造方法 |
JPH1070012A (ja) * | 1996-06-03 | 1998-03-10 | Matsushita Electric Ind Co Ltd | バリスタの製造方法 |
JP3555563B2 (ja) * | 1999-08-27 | 2004-08-18 | 株式会社村田製作所 | 積層チップバリスタの製造方法および積層チップバリスタ |
JP3460683B2 (ja) * | 2000-07-21 | 2003-10-27 | 株式会社村田製作所 | チップ型電子部品及びその製造方法 |
JP2002050536A (ja) * | 2000-07-31 | 2002-02-15 | Murata Mfg Co Ltd | 耐還元性誘電体セラミックおよび積層セラミックコンデンサ |
JP2003151805A (ja) * | 2001-11-15 | 2003-05-23 | Murata Mfg Co Ltd | チップ型電子部品およびその製造方法 |
-
2003
- 2003-08-07 JP JP2003289321A patent/JP4311124B2/ja not_active Expired - Lifetime
- 2003-08-20 TW TW092122867A patent/TWI239020B/zh not_active IP Right Cessation
- 2003-08-29 CN CNB031557090A patent/CN1303621C/zh not_active Expired - Lifetime
- 2003-09-08 KR KR10-2003-0062608A patent/KR100498682B1/ko active IP Right Grant
- 2003-09-09 US US10/657,070 patent/US6791163B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101444678B1 (ko) | 2007-06-12 | 2014-09-26 | 티디케이가부시기가이샤 | 적층형 ptc 서미스터 및 이의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
JP4311124B2 (ja) | 2009-08-12 |
CN1303621C (zh) | 2007-03-07 |
US6791163B2 (en) | 2004-09-14 |
TWI239020B (en) | 2005-09-01 |
KR20040023757A (ko) | 2004-03-18 |
TW200418053A (en) | 2004-09-16 |
US20040048052A1 (en) | 2004-03-11 |
JP2004128488A (ja) | 2004-04-22 |
CN1487534A (zh) | 2004-04-07 |
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