KR100496526B1 - 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법 - Google Patents
표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법 Download PDFInfo
- Publication number
- KR100496526B1 KR100496526B1 KR10-2002-0058216A KR20020058216A KR100496526B1 KR 100496526 B1 KR100496526 B1 KR 100496526B1 KR 20020058216 A KR20020058216 A KR 20020058216A KR 100496526 B1 KR100496526 B1 KR 100496526B1
- Authority
- KR
- South Korea
- Prior art keywords
- lithium tantalate
- single crystal
- substrate
- tantalate single
- acoustic wave
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02921—Measures for preventing electric discharge due to pyroelectricity
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0058216A KR100496526B1 (ko) | 2002-09-25 | 2002-09-25 | 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법 |
PCT/KR2003/001958 WO2004030046A1 (en) | 2002-09-25 | 2003-09-25 | Method of producing lithium tantalate substrate for surface acoustic wave element |
JP2004539629A JP2005535555A (ja) | 2002-09-25 | 2003-09-25 | 表面弾性波素子用タンタル酸リチウム単結晶基板の製造方法 |
AU2003267833A AU2003267833A1 (en) | 2002-09-25 | 2003-09-25 | Method of producing lithium tantalate substrate for surface acoustic wave element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0058216A KR100496526B1 (ko) | 2002-09-25 | 2002-09-25 | 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040029247A KR20040029247A (ko) | 2004-04-06 |
KR100496526B1 true KR100496526B1 (ko) | 2005-06-22 |
Family
ID=32040925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0058216A KR100496526B1 (ko) | 2002-09-25 | 2002-09-25 | 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2005535555A (ja) |
KR (1) | KR100496526B1 (ja) |
AU (1) | AU2003267833A1 (ja) |
WO (1) | WO2004030046A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6932957B2 (en) | 2002-06-28 | 2005-08-23 | Silicon Light Machines Corporation | Method and apparatus for increasing bulk conductivity of a ferroelectric material |
TWI346719B (en) | 2003-11-25 | 2011-08-11 | Sumitomo Metal Mining Co | Lithium niobate substrate and method of producing the same |
KR100651760B1 (ko) * | 2004-05-14 | 2006-12-01 | 일진디스플레이(주) | 표면 탄성파 소자용 탄탈산 리튬 기판의 제조방법과 그 기판 |
US7153487B2 (en) | 2004-05-25 | 2006-12-26 | Crystal Technology, Inc. | Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals |
US7728697B2 (en) | 2006-09-26 | 2010-06-01 | Mg Materials Corporation | Systems and methods for electrically reducing ferroelectric materials to increase bulk conductivity |
CN108624961B (zh) * | 2018-05-29 | 2020-06-30 | 中国电子科技集团公司第二十六研究所 | 一种钽酸锂黑片的回收再利用方法 |
JP7099203B2 (ja) * | 2018-09-06 | 2022-07-12 | 住友金属鉱山株式会社 | タンタル酸リチウム基板の製造方法 |
JPWO2022176689A1 (ja) * | 2021-02-19 | 2022-08-25 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60246299A (ja) * | 1985-04-22 | 1985-12-05 | Toshiba Corp | タンタル酸リチウム単結晶ウエハーの製造方法 |
JPS63218596A (ja) * | 1987-03-05 | 1988-09-12 | Hitachi Metals Ltd | 光透過性に優れたリチウムタンタレ−ト単結晶およびその製造方法 |
JPH06250399A (ja) * | 1993-02-24 | 1994-09-09 | Fuji Elelctrochem Co Ltd | 焦電性を有する物質の熱処理方法及び装置 |
JPH06293598A (ja) * | 1993-04-05 | 1994-10-21 | Shin Etsu Chem Co Ltd | 光用LiTaO3単結晶およびその製造方法 |
US6319430B1 (en) * | 1997-07-25 | 2001-11-20 | Crystal Technology, Inc. | Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3261594B2 (ja) * | 1992-04-24 | 2002-03-04 | 日立金属株式会社 | タンタル酸リチウム単結晶、単結晶基板および光素子 |
JPH10270977A (ja) * | 1997-03-21 | 1998-10-09 | Mitsubishi Materials Corp | 表面弾性波素子 |
JP3712035B2 (ja) * | 1999-04-28 | 2005-11-02 | 株式会社村田製作所 | 表面波装置の製造方法 |
JP2002226299A (ja) * | 2000-12-01 | 2002-08-14 | Toshiba Corp | 単結晶製造装置及び単結晶製造方法 |
-
2002
- 2002-09-25 KR KR10-2002-0058216A patent/KR100496526B1/ko not_active IP Right Cessation
-
2003
- 2003-09-25 WO PCT/KR2003/001958 patent/WO2004030046A1/en active Application Filing
- 2003-09-25 JP JP2004539629A patent/JP2005535555A/ja active Pending
- 2003-09-25 AU AU2003267833A patent/AU2003267833A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60246299A (ja) * | 1985-04-22 | 1985-12-05 | Toshiba Corp | タンタル酸リチウム単結晶ウエハーの製造方法 |
JPS63218596A (ja) * | 1987-03-05 | 1988-09-12 | Hitachi Metals Ltd | 光透過性に優れたリチウムタンタレ−ト単結晶およびその製造方法 |
JPH06250399A (ja) * | 1993-02-24 | 1994-09-09 | Fuji Elelctrochem Co Ltd | 焦電性を有する物質の熱処理方法及び装置 |
JPH06293598A (ja) * | 1993-04-05 | 1994-10-21 | Shin Etsu Chem Co Ltd | 光用LiTaO3単結晶およびその製造方法 |
US6319430B1 (en) * | 1997-07-25 | 2001-11-20 | Crystal Technology, Inc. | Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same |
Also Published As
Publication number | Publication date |
---|---|
WO2004030046A1 (en) | 2004-04-08 |
KR20040029247A (ko) | 2004-04-06 |
AU2003267833A1 (en) | 2004-04-19 |
JP2005535555A (ja) | 2005-11-24 |
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