KR100475743B1 - In2O3 Thin-film O3 Gas Sensors Using R.F. Magnetron Sputtering and Their Fabrication Method - Google Patents

In2O3 Thin-film O3 Gas Sensors Using R.F. Magnetron Sputtering and Their Fabrication Method Download PDF

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KR100475743B1
KR100475743B1 KR10-2002-0008353A KR20020008353A KR100475743B1 KR 100475743 B1 KR100475743 B1 KR 100475743B1 KR 20020008353 A KR20020008353 A KR 20020008353A KR 100475743 B1 KR100475743 B1 KR 100475743B1
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thin film
ozone gas
magnetron sputtering
gas sensor
sno
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KR20020031360A (en
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유광수
권정범
이동수
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유광수
권정범
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036—Specially adapted to detect a particular component
    • G01N33/0039—Specially adapted to detect a particular component for O3
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Abstract

본 발명은 R.F. 마그네트론 스퍼터링법을 이용하여 알루미나 기판에 SnO2가 소량 첨가된 In2O3 박막을 증착한 반도체식 오존 가스센서와 그 제조방법에 관한 것으로, 저가이고 휴대 및 사용이 간편하며 초소형, 고감도를 지닌 장점이 있다. 이를 위하여 본 발명은 R.F. 마그네트론 스퍼터링법과 In2O3 박막을 이용한 것이 특징이다. 이는 기존 재료 및 제조방법(딥코팅, 스크린 프린팅법)에 의한 것보다 균질하고 초미립 입자크기에 의한 감지막의 비표면적 증가로 인하여 제한된 면적에서 감도를 향상시킬 수 있는 기술이다.The present invention relates to a semiconductor ozone gas sensor deposited with an In 2 O 3 thin film in which a small amount of SnO 2 is added to an alumina substrate using an RF magnetron sputtering method, and a method of manufacturing the same. There is an advantage with high sensitivity. To this end, the present invention is characterized by using the RF magnetron sputtering method and In 2 O 3 thin film. This is a technology that can improve sensitivity in a limited area due to the increase in specific surface area of the sensing film due to the homogeneous and ultra-fine particle size than conventional materials and manufacturing methods (deep coating, screen printing method).

[색인어][Index]

R.F. 마그네트론 스퍼터링법, In2O3 박막, 오존 가스센서RF Magnetron Sputtering, In 2 O 3 Thin Film, Ozone Gas Sensor

Description

R.F. 마그네트론 스퍼터링법을 이용한 In2O3 박막 오존 가스센서 및 그 제조방법{In2O3 Thin-film O3 Gas Sensors Using R.F. Magnetron Sputtering and Their Fabrication Method}R.F. In2O3 thin film ozone gas sensor using magnetron sputtering method and its manufacturing method {In2O3 Thin-film O3 Gas Sensors Using R.F. Magnetron Sputtering and Their Fabrication Method}

본 발명은 오존 가스센서의 재료인 SnO2가 소량 첨가된 In2O3 박막을 R.F. 마그네트론 스퍼터링법으로 제조한 오존 가스센서와 그 제조방법에 대한 기술이다.The present invention is to produce the material of SnO 2 added in a small amount of In 2 O 3 thin film of the ozone gas sensor as RF magnetron sputtering ozone gas sensor and the description of the method of manufacturing the same.

In2O3는 오존 가스센서의 재료로 널리 알려진 것으로 현재 많은 연구가 이루어지고 있는 물질이고 오존 감지에 있어서 우수한 선택성과 고감도의 특성을 나타낸다. 기존 오존 농도 측정에는 자외선 흡수법 등에 의한 정확한 오존 농도를 측정할 수 있지만 고가이며 운반 및 조작이 용이하지 못하기 때문에 범용적인 사용에는 한계가 있다. R.F. 마그네트론 스퍼터링법은 많이 사용되고 있는 기존 제조방법(딥코팅, 스크린 프린팅)에 비해 균질의 박막과 초미립 크기의 입자를 제조하여 감도를 더욱더 높일 수 있는 기술이다.In 2 O 3 is widely known as a material of ozone gas sensor and is currently being studied. It shows excellent selectivity and high sensitivity in ozone detection. Existing ozone concentration measurement can measure accurate ozone concentration by UV absorption method, etc., but it is expensive and not easy to transport and manipulate, so there is a limit to general use. RF magnetron sputtering method is a technology that can increase the sensitivity even more by manufacturing a homogeneous thin film and ultra-fine particle size compared to the conventional manufacturing method (deep coating, screen printing) that is widely used.

본 발명은 저농도의 오존 가스를 정확하게 감지하기 어려운 기존 반도체식 가스센서의 단점과 휴대하기 어렵고 고가인 자외선 흡수법 측정방법을 보완하기 위해 SnO2가 소량 첨가된 In2O3 물질을 타겟으로 사용하여 R.F. 마그네트론 스퍼터링법에 의하여 박막 센서를 제조하여 높은 감도와 휴대 용이 및 저가의 오존 가스센서를 제조하는데 주 목적이 있다.The present invention uses a small amount of In 2 O 3 material added with SnO 2 as a target to complement the shortcomings of the conventional semiconductor gas sensor that is difficult to accurately detect the low concentration of ozone gas and the UV absorption method that is difficult to carry and expensive The main purpose is to manufacture a thin film sensor by RF magnetron sputtering method to produce a high sensitivity, easy portability and low cost ozone gas sensor.

본 발명의 특징은 SnO2가 소량 첨가된 In2O3 타겟을 사용하여 R.F. 마그네트론 스퍼터링법으로 박막 오존 가스센서를 제조하는 것인데, 균질하고 초미립 입자크기를 얻을 수 있다.A feature of the present invention is to prepare a thin film ozone gas sensor by RF magnetron sputtering method using a small amount of In 2 O 3 added SnO 2 , it is possible to obtain a homogeneous and ultra-fine particle size.

이하 다음과 같이 본 발명의 실시예에서 첨부된 도면과 함께 상세히 설명한다.Hereinafter, with reference to the accompanying drawings in the embodiment of the present invention will be described in detail.

(실시예)(Example)

(가) 센서 제조(A) Sensor manufacturing

제반 제조공정은 도 1에 나타내었다. 기판재료는 알루미나(5.2 mm×10.2 mm×0.7 mm)를 사용했으며, 기판 앞면에 백금 전극을 형성하였고 기판 뒷면에는 백금박막을 사용하여 히터를 형성하였다. 센서의 구조는 도 2에 나타내었다.The general manufacturing process is shown in FIG. Alumina (5.2 mm x 10.2 mm x 0.7 mm) was used as the substrate material, a platinum electrode was formed on the front surface of the substrate, and a heater was formed on the back surface of the substrate using a platinum thin film. The structure of the sensor is shown in FIG.

위와 같은 기판에 전도성 페이스트를 이용하여 백금 리드선을 연결한 후, 500℃에서 30분 동안 열처리하여 부착하였다. 이상과 같이 준비된 기판위에 오존 가스 감지막으로 SnO2가 소량 첨가된 In2O3 박막을 RF 마그네트론 스퍼터링법으로 증착하였다. 증착조건은 다음과 같다.After connecting the platinum lead wire by using a conductive paste to the substrate as described above, it was attached by heat treatment at 500 ℃ for 30 minutes. On the substrate prepared as described above, an In 2 O 3 thin film in which a small amount of SnO 2 was added to the ozone gas sensing film was deposited by RF magnetron sputtering. Deposition conditions are as follows.

Vacumm : 10-4 torrVacumm: 10 -4 torr

RF power : 100 WRF power: 100 W

Sputtering time : 60 min.Sputtering time: 60 min.

이때 사용한 타겟(지름 2인치)의 조성은 5 중량%의 SnO2와 95 중량%의 In2O3 이었으며, 박막 증착시 기판의 온도는 300℃와 500℃이었다. 박막의 두께는 2000 Å정도였고, 시편의 일부를 공기 중 500℃에서 4시간동안 열처리를 하였다.At this time, the composition of the target (2 inches in diameter) was 5% by weight of SnO 2 and 95% by weight of In 2 O 3 , the temperature of the substrate during thin film deposition was 300 ℃ and 500 ℃. The thickness of the thin film was about 2000 mm 3, and some of the specimens were heat-treated at 500 ° C. for 4 hours in air.

이렇게 만들어진 시편에 센서의 온도를 측정하기 K형 열전대를 세라믹 본드를 이용하여 기판 뒷면에 부착한 다음 150℃에서 3시간동안 오븐 속에 넣어 고정시켰다. 제조된 각각의 박막에 대하여 X-선회절분석기로 분석한 상분석 결과를 도 3에 나타내었다. 모두 In2O3 박막의 X-선 회절피크 (211), (222), (440)면이 나타났고 이것으로 보아 결정이 잘 형성되었음을 알 수 있었다. 그리고 SnO2의 X-선 회절피크가 나타나지 않은 것으로 보아 SnO2가 완전히 고용되었다.To measure the temperature of the sensor on the specimen thus made, a K-type thermocouple was attached to the back of the substrate using a ceramic bond and then fixed in an oven at 150 ° C. for 3 hours. 3 shows the results of phase analysis analyzed by X-ray diffractometer for each of the prepared thin films. X-ray diffraction peaks (211), (222), and (440) planes of the In 2 O 3 thin films were found in all, indicating that the crystals were well formed. And a bore SnO 2 as X- ray diffraction peak of SnO 2 are not completely employed.

(나) 박막의 표면 사진(B) Surface photograph of thin film

도 4에 SnO2가 소량 첨가된 In2O3 박막의 표면 사진을 나타내었다. 4a와 b는 각각 기판온도 300℃에서 증착한 박막과 그 박막을 500℃에서 열처리 한 다음 주사전자현미경으로 찍은 미세구조이다. 큰 입자(grain)들과 작은 입자들이 혼재해 있고 기공(pore)이 많은 다공성 미세구조를 나타내었으며, 열처리 후 입자들이 약간 성장했지만 큰 차이는 없었다. 4c와 d는 각각 기판온도 500℃에서 증착한 박막과 그 박막을 500℃에서 열처리 한 다음의 미세구조이다. 미세구조는 기판온도 300℃에서 증착한 박막에 대한 열처리 전 ·후와 거의 비슷한 구조를 보였지만 열처리 후 작은 입자들의 성장으로 인해 큰 입자와 작은 입자 크기의 차이가 많이 줄어든 것을 볼 수 있고 이로 인해 기공율이 더 커졌다. 기공율의 증가는 오존가스와 SnO2 가 소량 첨가된 In2O3 박막 표면과의 접촉면을 넓게 하여 감도를 증가시켜 주었다.4 shows a surface photograph of the In 2 O 3 thin film to which a small amount of SnO 2 is added. 4a and b are microstructures obtained by scanning electron microscope after thin film deposited at substrate temperature of 300 ℃ and heat treatment at 500 ℃. Large grains and small grains were mixed and the pores showed a porous microstructure with many pores. After heat treatment, the grains grew slightly but there was no significant difference. 4c and d are thin films deposited at the substrate temperature of 500 ° C. and the microstructure after heat treatment at 500 ° C., respectively. The microstructure showed a structure similar to before and after heat treatment of thin film deposited at substrate temperature of 300 ℃, but the difference of large and small particle size was reduced by the growth of small particles after heat treatment. Got bigger The increase in porosity increased sensitivity by widening the contact surface between the ozone gas and the surface of In 2 O 3 thin film containing SnO 2 .

(다) 오존 가스감도 특성(C) Ozone gas sensitivity characteristics

각각의 박막의 250℃ 작동온도에서 측정한 농도의 변화에 따른 오존 가스감도 특성 측정결과를 도5에 나타내었다. 이때, 가스감도는 오존가스 중에서의 센서저항/공기 중에서의 센서저항으로 하였다. 열처리를 하지 않은 박막보다 500℃에서 열처리한 박막의 감도가 높았으며, 300℃에서 증착한 박막이 500℃에서 증착한 박막보다 감도가 높았다. 이는 미세구조 관찰에서도 보았듯이 열처리로 인하여 기공율이 증가하여 가스와의 접촉 표면적이 증가하였기 때문으로 사료된다. 그리고 0.05 ppm의 낮은 농도에서도 낮지만 감응 특성을 확인할 수 있었다.5 shows ozone gas sensitivity characteristic measurement results according to the change of concentration measured at 250 ° C. operating temperature of each thin film. At this time, gas sensitivity was made into the sensor resistance in ozone gas / the sensor resistance in air. The sensitivity of the thin film heat-treated at 500 ° C. was higher than that of the thin film that was not heat-treated, and the thin film deposited at 300 ° C. was more sensitive than the thin film deposited at 500 ° C. This is presumably due to the increase in porosity due to the heat treatment and the contact surface area with the gas. And even at a low concentration of 0.05 ppm, the response characteristics were low.

도 6에는 300℃에서 증착한 박막의 작동온도 변화에 따른 오존 가스에 대한 감도 특성을 나타내었다. 작동온도가 증가하면 감도는 감소하지만 오존 가스에 대한 센서의 응답특성이 빨라졌다. 350℃의 작동온도에서 반응시간은 약 30초 정도 걸렸지만 250℃에서는 약 2분 가량이 소요되었다. 또한 더 안정한 출력신호를 얻을 수 있었다. 본 발명의 실시예에서와 같이 제조한 SnO2가 소량 첨가된 In2O3 박막 오존 가스센서는 1 ppm 이하의 낮은 농도를 감지할 수 있는 우수한 센서로 사료된다.Figure 6 shows the sensitivity characteristics for ozone gas according to the change in operating temperature of the thin film deposited at 300 ℃. As operating temperature increases, sensitivity decreases, but the sensor's response to ozone gas increases. At 350 ° C, the reaction took about 30 seconds, but at 250 ° C it took about 2 minutes. In addition, a more stable output signal was obtained. The In 2 O 3 thin film ozone gas sensor added with a small amount of SnO 2 prepared as in the embodiment of the present invention is considered to be an excellent sensor capable of detecting low concentrations of 1 ppm or less.

SnO2가 소량 첨가된 In2O3 물질을 R.F. 마그네트론 스퍼터링법으로 제조한 오존 가스센서는 현재 상용화되어 있는 반도체식 오존센서에 비해 높은 감도와 자외선 흡수법 농도측정기에 비해 휴대하기 쉽고 가격이 낮다는 장점을 가지고 있다. 본 기술을 통하여 매우 낮은 농도의 가스도 감지가 가능한 고성능 가스센서의 제조와 초미립 세라믹 박막 제조기술확립에 기여할 것으로 기대된다.SnO 2 has a small amount of the added In 2 O 3 materials produced by RF magnetron sputtering method, an ozone gas sensor easy to carry, as compared to the high sensitivity and the ultraviolet absorption concentration measuring expensive than the semiconductor type ozone sensor that is currently commercially available low is It has advantages This technology is expected to contribute to the manufacture of high-performance gas sensors that can detect very low concentrations of gas and to establish ultrafine ceramic thin film manufacturing technology.

도 1은 본 발명의 실시예에 따라 R.F. 마그네트론 스퍼터링법에 의한 SnO2가 소량 첨가된 In2O3 박막 오존 가스센서의 제조 공정도이다.FIG. 1 is a manufacturing process diagram of an In 2 O 3 thin film ozone gas sensor to which SnO 2 is added in a small amount by RF magnetron sputtering according to an embodiment of the present invention.

도 2는 본 발명의 실시예에 따라 제조한 센서의 구조이다.2 is a structure of a sensor manufactured according to an embodiment of the present invention.

도 3은 본 발명의 실시예에 따라 제조한 SnO2가 소량 첨가된 In2O3 박막의 X선회절도이다.3 is an X-ray diffractogram of the In 2 O 3 thin film added with a small amount of SnO 2 prepared according to an embodiment of the present invention.

도 4는 본 발명의 실시예에 따라 제조한 SnO2가 소량 첨가된 In2O3 박막의 증착온도와 열처리 전·후의 미세구조를 비교한 주사전자현미경사진[a. 300℃에서 증착한 박막, b. 300℃에서 증착하여 500℃에서 열처리한 박막, c. 500℃에서 증착한 박막, d. 500℃에서 증착하여 500℃에서 열처리한 박막]이다.Figure 4 is a scanning electron micrograph comparing the deposition temperature and the microstructure before and after the heat treatment of the In 2 O 3 thin film is added a small amount of SnO 2 prepared according to an embodiment of the present invention [a. Thin films deposited at 300 ° C., b. Thin film deposited at 300 ° C. and heat treated at 500 ° C., c. Thin films deposited at 500 ° C., d. Thin film deposited at 500 ° C. and heat-treated at 500 ° C.].

도 5는 본 발명의 실시예에 따라 제조한 SnO2가 소량 첨가된 In2O3 박막 오존센서에 대하여 오존 농도 변화에 따른 감도 특성 나타낸 그래프이다.FIG. 5 is a graph showing sensitivity characteristics according to ozone concentration change for an In 2 O 3 thin film ozone sensor to which a small amount of SnO 2 is added according to an embodiment of the present invention.

도 6은 본 발명의 실시예에 따라 제조한 SnO2가 소량 첨가된 In2O3 박막 오존센서에 대하여 시간에 따른 감도의 변화를 나타낸 그래프이다.FIG. 6 is a graph showing a change in sensitivity with time for an In 2 O 3 thin film ozone sensor to which a small amount of SnO 2 is added according to an embodiment of the present invention.

Claims (2)

오존 가스센서용 감지막 재료는 SnO2가 1∼10 중량% 첨가된 In2O3를 감지물질로 하고, 구성요소는 알루미나 기판 뒷면에 히터 박막과 온도 측정을 위한 열전대가 형성되고 앞면에 전극과 감지막이 형성된 소자로 이루어졌으며, 250℃∼400℃의 작동온도에서 오존가스를 측정하는 것을 특징으로 하는 오존 가스센서.The sensing film material for the ozone gas sensor is In 2 O 3 containing 1-10 wt% of SnO 2 , and the component is formed with a heater thin film on the back of the alumina substrate and a thermocouple for temperature measurement. An ozone gas sensor comprising an element with a sensing film and measuring ozone gas at an operating temperature of 250 ° C to 400 ° C. 오존 가스센서 제조방법을 R.F. 마그네트론 스퍼터링법으로 300℃∼500℃의 기판 온도에서 히터와 전극이 인쇄된 알루미나 기판에 2000 Å∼3000 Å 두께의 감지막을 증착시킨 다음 공기중 400℃∼600℃에서 열처리하는 것을 특징으로 하며, 구성요소는 알루미나 기판 뒷면에 히터 박막과 온도 측정을 위한 열전대가 형성되고 앞면에 전극과 감지막이 형성된 소자로 이루어졌으며, 250℃∼400℃의 작동온도에서 오존가스를 측정하는 것을 특징으로 한 오존 가스센서 제조방법.Manufacturing method of ozone gas sensor is R.F. It is characterized in that the magnetron sputtering method deposits a sensing film having a thickness of 2000 Å to 3000 인쇄 on an alumina substrate printed with a heater and an electrode at a substrate temperature of 300 ° C. to 500 ° C., and then heat-treats it at 400 ° C. to 600 ° C. in air. The element is composed of a heater thin film on the back of the alumina substrate and a thermocouple for temperature measurement, and an electrode and a sensing film formed on the front surface. The ozone gas sensor is characterized by measuring ozone gas at an operating temperature of 250 ° C to 400 ° C. Manufacturing method.
KR10-2002-0008353A 2002-02-16 2002-02-16 In2O3 Thin-film O3 Gas Sensors Using R.F. Magnetron Sputtering and Their Fabrication Method KR100475743B1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885929A (en) * 1987-10-08 1989-12-12 New Cosmos Electric Co. Ltd. Ozone gas sensor and ozone gas detecting device having ozone gas sensor
JPH0510909A (en) * 1991-07-01 1993-01-19 Matsushita Electric Ind Co Ltd Ozone sensor
JPH0682409A (en) * 1992-09-03 1994-03-22 Matsushita Electric Ind Co Ltd Ozone sensor
JPH08292167A (en) * 1995-04-24 1996-11-05 Matsushita Electric Ind Co Ltd Ozone sensor
KR0172921B1 (en) * 1996-11-15 1999-05-01 구자홍 Method of manufacturing thick film type gas sensor f-r ozone
KR100236336B1 (en) * 1997-12-04 1999-12-15 구자홍 Thick film ozone-senser of oxide semiconductor and its fabricating method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885929A (en) * 1987-10-08 1989-12-12 New Cosmos Electric Co. Ltd. Ozone gas sensor and ozone gas detecting device having ozone gas sensor
JPH0510909A (en) * 1991-07-01 1993-01-19 Matsushita Electric Ind Co Ltd Ozone sensor
JPH0682409A (en) * 1992-09-03 1994-03-22 Matsushita Electric Ind Co Ltd Ozone sensor
JPH08292167A (en) * 1995-04-24 1996-11-05 Matsushita Electric Ind Co Ltd Ozone sensor
KR0172921B1 (en) * 1996-11-15 1999-05-01 구자홍 Method of manufacturing thick film type gas sensor f-r ozone
KR100236336B1 (en) * 1997-12-04 1999-12-15 구자홍 Thick film ozone-senser of oxide semiconductor and its fabricating method

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