KR100443330B1 - 화학 기계적 연마 방법 및 장치 - Google Patents
화학 기계적 연마 방법 및 장치 Download PDFInfo
- Publication number
- KR100443330B1 KR100443330B1 KR10-1999-0030803A KR19990030803A KR100443330B1 KR 100443330 B1 KR100443330 B1 KR 100443330B1 KR 19990030803 A KR19990030803 A KR 19990030803A KR 100443330 B1 KR100443330 B1 KR 100443330B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- wafer
- polishing cloth
- cloth
- motion
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 156
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000000126 substance Substances 0.000 title claims description 9
- 230000033001 locomotion Effects 0.000 claims description 119
- 239000004744 fabric Substances 0.000 claims description 101
- 239000007788 liquid Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 133
- 239000010410 layer Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 235000012489 doughnuts Nutrition 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Weting (AREA)
Abstract
Description
Claims (14)
- 연마대상 웨이퍼와 연마포를 각각 준비하는 단계와;상기 웨이퍼의 연마면을 연마포의 표면에 접촉시키는 단계와;상기 웨이퍼를 소정의 축을 중심으로 궤도 운동시키는 단계와;상기 연마포를 자전을 하지 않는 상태에서 소정의 회전 중심에 대하여 궤도 운동시키되, 상기 연마포의 궤도 운동 반지름이 상기 웨이퍼의 궤도 운동 반지름에 비해 작도록 하는 단계를 구비하여 웨이퍼의 연마가 이루어지도록 하는 것을 특징으로 하는 화학 기계적 연마방법.
- 삭제
- 삭제
- 삭제
- 제1항에 있어서, 상기 웨이퍼의 연마단계 중에 상기 웨이퍼를 연마하기 위한 연마액의 적어도 일부가 상기 연마포를 통과하여 공급되는 것을 특징으로 하는 화학 기계적 연마방법.
- 삭제
- 제1항에 있어서, 상기 웨이퍼의 연마 단계 과정 중에, 상기 웨이퍼와 연마포의 궤도 운동들 중에 각속도가 작은 쪽을 지지하는 축에 전달되는 마찰력을 감지하여 연마종점을 판단하는 단계를 더 구비하는 것을 특징으로 하는 화학 기계적 연마방법.
- 연마포와;상기 연마포가 안착 고정된 플레이튼과;상기 연마포에 연마대상 웨이퍼를 가압 접촉시키기 위한 웨이퍼 캐리어와;상기 웨이퍼가 궤도 운동을 하도록 상기 캐리어를 궤도 운동시키는 구동수단과;상기 연마포가 궤도 운동을 할 수 있도록 상기 플레이튼을 궤도 운동시키되, 상기 연마포의 궤도 운동 반지름은 상기 웨이퍼의 궤도 운동 반지름에 비해 작도록 하는 다른 구동수단을 구비하여 이루어지는 것을 특징으로 하는 화학 기계적 연마장치.
- 삭제
- 삭제
- 제8항에 있어서, 상기 웨이퍼를 연마하기 위한 연마액이 상기 연마포를 통과하여 공급되도록 상기 플레이튼에 연결된 연마액 공급배관을 구비하는 것을 특징으로 하는 화학 기계적 연마장치.
- 삭제
- 제8항에 있어서, 상기 웨이퍼의 연마 단계 과정 중에, 상기 웨이퍼와 연마포의 궤도 운동들 중에 각속도가 작은 쪽을 지지하는 축에 전달되는 마찰력을 감지하는 수단을 더 구비하는 것을 특징으로 하는 화학 기계적 연마장치.
- 제13항에 있어서, 상기 마찰력 감지수단이 압전 센서인 것을 특징으로 하는 화학 기계적 연마장치.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1999-0030803A KR100443330B1 (ko) | 1998-07-31 | 1999-07-28 | 화학 기계적 연마 방법 및 장치 |
PCT/KR1999/000419 WO2000007230A1 (en) | 1998-07-31 | 1999-07-31 | Method and apparatus for chemical mechanical polishing |
US09/509,334 US6315641B1 (en) | 1998-07-31 | 1999-07-31 | Method and apparatus for chemical mechanical polishing |
DE69927935T DE69927935T2 (de) | 1998-07-31 | 1999-07-31 | Verfahren und einrichtung zum chemisch-mechanischem polieren |
EP99935149A EP1031166B1 (en) | 1998-07-31 | 1999-07-31 | Method and apparatus for chemical mechanical polishing |
JP2000562942A JP2002521839A (ja) | 1998-07-31 | 1999-07-31 | 化学機械的研磨方法及び装置 |
AT99935149T ATE308116T1 (de) | 1998-07-31 | 1999-07-31 | Verfahren und einrichtung zum chemisch- mechanischem polieren |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980030981 | 1998-07-31 | ||
KR19980030981 | 1998-07-31 | ||
KR10-1999-0030803A KR100443330B1 (ko) | 1998-07-31 | 1999-07-28 | 화학 기계적 연마 방법 및 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000012039A KR20000012039A (ko) | 2000-02-25 |
KR100443330B1 true KR100443330B1 (ko) | 2004-08-09 |
Family
ID=36590880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1999-0030803A KR100443330B1 (ko) | 1998-07-31 | 1999-07-28 | 화학 기계적 연마 방법 및 장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6315641B1 (ko) |
EP (1) | EP1031166B1 (ko) |
JP (1) | JP2002521839A (ko) |
KR (1) | KR100443330B1 (ko) |
AT (1) | ATE308116T1 (ko) |
DE (1) | DE69927935T2 (ko) |
WO (1) | WO2000007230A1 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3663348B2 (ja) * | 2000-09-26 | 2005-06-22 | Towa株式会社 | 研磨装置及び研磨方法 |
DE10132504C1 (de) | 2001-07-05 | 2002-10-10 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung |
JP3843933B2 (ja) * | 2002-02-07 | 2006-11-08 | ソニー株式会社 | 研磨パッド、研磨装置および研磨方法 |
KR100776564B1 (ko) | 2006-07-18 | 2007-11-15 | 두산메카텍 주식회사 | 화학적 기계적 연마장비의 구동장치 |
GB2452091B (en) * | 2007-08-24 | 2013-01-02 | Zeeko Ltd | Computer controlled work tool apparatus and method |
JP5234403B2 (ja) * | 2008-01-18 | 2013-07-10 | 株式会社ニコン | 研磨方法および研磨装置 |
US10076817B2 (en) | 2014-07-17 | 2018-09-18 | Applied Materials, Inc. | Orbital polishing with small pad |
TWI692385B (zh) * | 2014-07-17 | 2020-05-01 | 美商應用材料股份有限公司 | 化學機械硏磨所用的方法、系統與硏磨墊 |
US10105812B2 (en) | 2014-07-17 | 2018-10-23 | Applied Materials, Inc. | Polishing pad configuration and polishing pad support |
US10207389B2 (en) | 2014-07-17 | 2019-02-19 | Applied Materials, Inc. | Polishing pad configuration and chemical mechanical polishing system |
US9873179B2 (en) | 2016-01-20 | 2018-01-23 | Applied Materials, Inc. | Carrier for small pad for chemical mechanical polishing |
WO2017165216A1 (en) | 2016-03-24 | 2017-09-28 | Applied Materials, Inc. | Textured small pad for chemical mechanical polishing |
EP4187123A1 (en) * | 2021-11-30 | 2023-05-31 | Rolls-Royce Deutschland Ltd & Co KG | Method and system for reducing vibrations in rotating machinery |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05183042A (ja) * | 1991-12-28 | 1993-07-23 | Disco Abrasive Syst Ltd | ウェーハの吸着方法 |
US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
US5643053A (en) * | 1993-12-27 | 1997-07-01 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved polishing control |
KR970052698A (ko) * | 1995-12-29 | 1997-07-29 | 김광호 | 반도체 소자의 화학적 물리적 폴리슁(cmp) 방법 |
JPH10180622A (ja) * | 1996-12-26 | 1998-07-07 | Canon Inc | 精密研磨装置及び方法 |
US5876271A (en) * | 1993-08-06 | 1999-03-02 | Intel Corporation | Slurry injection and recovery method and apparatus for chemical-mechanical polishing process |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5177908A (en) * | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
JP2609741B2 (ja) | 1990-04-26 | 1997-05-14 | 株式会社東芝 | 自動製氷装置付冷蔵庫 |
US5308438A (en) * | 1992-01-30 | 1994-05-03 | International Business Machines Corporation | Endpoint detection apparatus and method for chemical/mechanical polishing |
US5232875A (en) | 1992-10-15 | 1993-08-03 | Micron Technology, Inc. | Method and apparatus for improving planarity of chemical-mechanical planarization operations |
US5643044A (en) * | 1994-11-01 | 1997-07-01 | Lund; Douglas E. | Automatic chemical and mechanical polishing system for semiconductor wafers |
JP3637977B2 (ja) * | 1995-01-19 | 2005-04-13 | 株式会社荏原製作所 | ポリッシングの終点検知方法 |
JP3664188B2 (ja) * | 1995-12-08 | 2005-06-22 | 株式会社東京精密 | 表面加工方法及びその装置 |
-
1999
- 1999-07-28 KR KR10-1999-0030803A patent/KR100443330B1/ko active IP Right Grant
- 1999-07-31 US US09/509,334 patent/US6315641B1/en not_active Expired - Lifetime
- 1999-07-31 DE DE69927935T patent/DE69927935T2/de not_active Expired - Fee Related
- 1999-07-31 WO PCT/KR1999/000419 patent/WO2000007230A1/en active IP Right Grant
- 1999-07-31 AT AT99935149T patent/ATE308116T1/de not_active IP Right Cessation
- 1999-07-31 EP EP99935149A patent/EP1031166B1/en not_active Expired - Lifetime
- 1999-07-31 JP JP2000562942A patent/JP2002521839A/ja not_active Ceased
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05183042A (ja) * | 1991-12-28 | 1993-07-23 | Disco Abrasive Syst Ltd | ウェーハの吸着方法 |
US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
US5876271A (en) * | 1993-08-06 | 1999-03-02 | Intel Corporation | Slurry injection and recovery method and apparatus for chemical-mechanical polishing process |
US5643053A (en) * | 1993-12-27 | 1997-07-01 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved polishing control |
KR970052698A (ko) * | 1995-12-29 | 1997-07-29 | 김광호 | 반도체 소자의 화학적 물리적 폴리슁(cmp) 방법 |
JPH10180622A (ja) * | 1996-12-26 | 1998-07-07 | Canon Inc | 精密研磨装置及び方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1031166A1 (en) | 2000-08-30 |
WO2000007230A1 (en) | 2000-02-10 |
DE69927935T2 (de) | 2006-07-06 |
JP2002521839A (ja) | 2002-07-16 |
ATE308116T1 (de) | 2005-11-15 |
EP1031166B1 (en) | 2005-10-26 |
DE69927935D1 (de) | 2005-12-01 |
KR20000012039A (ko) | 2000-02-25 |
US6315641B1 (en) | 2001-11-13 |
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