KR100345671B1 - Method for forming hafnium oxide layer - Google Patents
Method for forming hafnium oxide layer Download PDFInfo
- Publication number
- KR100345671B1 KR100345671B1 KR1020000064447A KR20000064447A KR100345671B1 KR 100345671 B1 KR100345671 B1 KR 100345671B1 KR 1020000064447 A KR1020000064447 A KR 1020000064447A KR 20000064447 A KR20000064447 A KR 20000064447A KR 100345671 B1 KR100345671 B1 KR 100345671B1
- Authority
- KR
- South Korea
- Prior art keywords
- oxide layer
- layer
- silicon
- hafnium oxide
- reaction chamber
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000064447A KR100345671B1 (en) | 2000-10-31 | 2000-10-31 | Method for forming hafnium oxide layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000064447A KR100345671B1 (en) | 2000-10-31 | 2000-10-31 | Method for forming hafnium oxide layer |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100345671B1 true KR100345671B1 (en) | 2002-07-24 |
Family
ID=37488598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000064447A KR100345671B1 (en) | 2000-10-31 | 2000-10-31 | Method for forming hafnium oxide layer |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100345671B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100550338B1 (ko) * | 2003-12-17 | 2006-02-08 | 주식회사 아이피에스 | 박막증착방법 및 그에 의하여 제조되는 웨이퍼의 박막구조체 |
KR101003700B1 (ko) * | 2003-08-19 | 2010-12-23 | 주성엔지니어링(주) | 원자층 증착을 이용한 금속 산화막 형성 방법 |
-
2000
- 2000-10-31 KR KR1020000064447A patent/KR100345671B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101003700B1 (ko) * | 2003-08-19 | 2010-12-23 | 주성엔지니어링(주) | 원자층 증착을 이용한 금속 산화막 형성 방법 |
KR100550338B1 (ko) * | 2003-12-17 | 2006-02-08 | 주식회사 아이피에스 | 박막증착방법 및 그에 의하여 제조되는 웨이퍼의 박막구조체 |
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Date | Code | Title | Description |
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A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20100624 Year of fee payment: 9 |
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LAPS | Lapse due to unpaid annual fee |