KR100345671B1 - Method for forming hafnium oxide layer - Google Patents

Method for forming hafnium oxide layer Download PDF

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Publication number
KR100345671B1
KR100345671B1 KR1020000064447A KR20000064447A KR100345671B1 KR 100345671 B1 KR100345671 B1 KR 100345671B1 KR 1020000064447 A KR1020000064447 A KR 1020000064447A KR 20000064447 A KR20000064447 A KR 20000064447A KR 100345671 B1 KR100345671 B1 KR 100345671B1
Authority
KR
South Korea
Prior art keywords
oxide layer
layer
silicon
hafnium oxide
reaction chamber
Prior art date
Application number
KR1020000064447A
Other languages
Korean (ko)
Inventor
Hyuk Kyoo Jang
Chan Lim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Priority to KR1020000064447A priority Critical patent/KR100345671B1/en
Application granted granted Critical
Publication of KR100345671B1 publication Critical patent/KR100345671B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: A method for forming a hafnium oxide layer is provided to be capable of solving the lattice-mismatch between a silicon layer and HfO2 thin film. CONSTITUTION: A silicon oxide layer is formed on a silicon layer or a silicon substrate. The resultant structure is loaded in a reaction chamber of atomic layer deposition equipment. By injecting Hf into the reaction chamber, the silicon oxide layer is reacted to the Hf. Then, Hf source material is adsorbed on the silicon substrate by injecting Hf(OC(CH3)3)4 into the reaction chamber. By injecting oxidizing reaction source into the reaction chamber, a hafnium oxide layer having an interfacial layer of Hf-Si-O is formed on the silicon substrate.
KR1020000064447A 2000-10-31 2000-10-31 Method for forming hafnium oxide layer KR100345671B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020000064447A KR100345671B1 (en) 2000-10-31 2000-10-31 Method for forming hafnium oxide layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020000064447A KR100345671B1 (en) 2000-10-31 2000-10-31 Method for forming hafnium oxide layer

Publications (1)

Publication Number Publication Date
KR100345671B1 true KR100345671B1 (en) 2002-07-24

Family

ID=37488598

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000064447A KR100345671B1 (en) 2000-10-31 2000-10-31 Method for forming hafnium oxide layer

Country Status (1)

Country Link
KR (1) KR100345671B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100550338B1 (en) * 2003-12-17 2006-02-08 주식회사 아이피에스 Method for depositing thin film on a wafer and a thin film structure manufactured by the same
KR101003700B1 (en) * 2003-08-19 2010-12-23 주성엔지니어링(주) Method of Forming Metal Oxidizing Thin Films by Atomic Layer Deposition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101003700B1 (en) * 2003-08-19 2010-12-23 주성엔지니어링(주) Method of Forming Metal Oxidizing Thin Films by Atomic Layer Deposition
KR100550338B1 (en) * 2003-12-17 2006-02-08 주식회사 아이피에스 Method for depositing thin film on a wafer and a thin film structure manufactured by the same

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