KR100317636B1 - 박막트랜지스터의 반도체층 및 그 제조방법 - Google Patents
박막트랜지스터의 반도체층 및 그 제조방법 Download PDFInfo
- Publication number
- KR100317636B1 KR100317636B1 KR1019990001125A KR19990001125A KR100317636B1 KR 100317636 B1 KR100317636 B1 KR 100317636B1 KR 1019990001125 A KR1019990001125 A KR 1019990001125A KR 19990001125 A KR19990001125 A KR 19990001125A KR 100317636 B1 KR100317636 B1 KR 100317636B1
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- South Korea
- Prior art keywords
- layer
- semiconductor layer
- thin film
- insulating layer
- ion
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 46
- 229920005591 polysilicon Polymers 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 37
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000005224 laser annealing Methods 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 14
- 239000010408 film Substances 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- -1 germanium ions Chemical class 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (9)
- 기판에 비정질실리콘을 증착하여 아일랜드 형태로 반도체층을 형성하는 단계와;상기 반도체층 위에 제 1 절연층을 형성하는 단계와;상기 제 1 절연층을 통해 상기 비정질 반도체층에 게르마늄을 이온도핑하여 상기 반도체층을 폴리실리콘게르마늄으로 형성하고, 폴리실리콘게르마늄층 위에 상기 제 1 절연층 사이에 SiOX층 또는 SiGeOX층으로 형성하는 단계와;상기 증착된 제 1 절연층을 식각하는 단계와;상기 SiOX층 또는 SiGeOX층이 형성된 폴리실리콘게르마늄 반도체층의 양측에 P타입 또는 N타입 불순물을 이온도핑하여 소스영역과 드레인영역을 형성하는 단계와;상기 폴리실리콘게르마늄 반도체층 상에 형성된 SiOX층 또는 SiGeOX층을 레이저 어닐링하여 제 2 절연층으로 형성하는 단계와;상기 제 2 절연층 위에 도전성 금속을 증착하고 소정의 패턴으로 패터닝하여 게이트전극을 형성하는 단계와;상기 이온도핑되어 형성된 소스와 드레인영역에 각각 소스전극과 드레인전극을 접속하는 단계를 포함하는 박막트랜지스터제조 방법.
- 제1항에 있어서,상기 제 1 절연층은 SiO2층인 박막트랜지스터 제조방법.
- 제1항에 있어서,상기 게르마늄이온의 이온도핑 방법은 이온주입(ion implatation)방법인 박막트랜지스터 제조방법.
- 제1항에 있어서,상기 SiOX층 또는 SiGeOX층의 두께는 100∼300Å인 박막트랜지스터 반도체층의 제조방법
- 제1항에 있어서,상기 비정질 실리콘은 수소를 포함하는 박막트랜지스터 제조방법.
- 제1항에 있어서,상기 폴리실리콘의 결정화단계에서 탈수소화 과정을 더욱 포함하는 박막트랜지스터 제조방법.
- 제1항에 있어서,상기 SiOX층 또는 SiGeOX층을 기판의 온도는 300∼400℃인 박막트랜지스터 제조방법.
- 제1항에 있어서,상기 제 2절연층은 SiO2층 또는 SiGeO4층인 박막트랜지스터 제조방법.
- 기판상에 비정질실리콘을 증착하는 단계와;상기 비정질실리콘을 증착하고 아일랜드 형태로 패터닝하여 반도체층을 형성하는 단계와;상기 반도체층 위에 절연물질을 증착하여 절연층을 형성하는 단계와;상기 절연층 위에 게르마늄을 이온도핑하여 상기 비정질실리콘 반도체층을 SiOX(또는 SiGeOX)/폴리 SiGe반도체층으로 결정화하는 단계와;상기 절연층을 식각하는 단계와;상기 SiOX(또는 SiGeOX)/폴리 SiGe반도체층에서 SiOX 또는 SiGeOx층을 어닐링하여 SiO2층 또는 SiGeO4층으로 형성하는 단계와;를 포함하는 폴리실리콘게르마늄 반도체층 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990001125A KR100317636B1 (ko) | 1999-01-15 | 1999-01-15 | 박막트랜지스터의 반도체층 및 그 제조방법 |
US09/377,440 US6338987B1 (en) | 1998-08-27 | 1999-08-19 | Method for forming polycrystalline silicon layer and method for fabricating thin film transistor |
US10/005,124 US6458636B1 (en) | 1998-08-27 | 2001-12-07 | Method for forming polycrystalline silicon layer and method for fabricating thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990001125A KR100317636B1 (ko) | 1999-01-15 | 1999-01-15 | 박막트랜지스터의 반도체층 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000050946A KR20000050946A (ko) | 2000-08-05 |
KR100317636B1 true KR100317636B1 (ko) | 2001-12-22 |
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KR1019990001125A KR100317636B1 (ko) | 1998-08-27 | 1999-01-15 | 박막트랜지스터의 반도체층 및 그 제조방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100497919B1 (ko) * | 2002-07-29 | 2005-06-29 | 가부시끼가이샤 도시바 | 반도체 장치의 제조 방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100745906B1 (ko) * | 2001-05-24 | 2007-08-02 | 주식회사 하이닉스반도체 | 반도체소자의 콘택플러그 형성방법 |
KR100761072B1 (ko) * | 2004-05-28 | 2007-09-21 | 삼성에스디아이 주식회사 | 평판표시장치와 그 제조방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09266313A (ja) * | 1996-03-28 | 1997-10-07 | Sharp Corp | 半導体装置およびその製造方法 |
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- 1999-01-15 KR KR1019990001125A patent/KR100317636B1/ko not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09266313A (ja) * | 1996-03-28 | 1997-10-07 | Sharp Corp | 半導体装置およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100497919B1 (ko) * | 2002-07-29 | 2005-06-29 | 가부시끼가이샤 도시바 | 반도체 장치의 제조 방법 |
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KR20000050946A (ko) | 2000-08-05 |
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