KR100312974B1 - 이미지센서의 단위 화소 - Google Patents
이미지센서의 단위 화소 Download PDFInfo
- Publication number
- KR100312974B1 KR100312974B1 KR1019990046055A KR19990046055A KR100312974B1 KR 100312974 B1 KR100312974 B1 KR 100312974B1 KR 1019990046055 A KR1019990046055 A KR 1019990046055A KR 19990046055 A KR19990046055 A KR 19990046055A KR 100312974 B1 KR100312974 B1 KR 100312974B1
- Authority
- KR
- South Korea
- Prior art keywords
- transistor
- photodiode
- gate
- source
- reset transistor
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 9
- 206010034960 Photophobia Diseases 0.000 abstract description 5
- 208000013469 light sensitivity Diseases 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000007599 discharging Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
- H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Abstract
Description
Claims (4)
- 이미지센서의 단위화소에 있어서,포토다이오드;상기 포토다이오드와 플로팅노드 사이에 소스-드레인 경로가 형성되며 게이트로 제1제어신호를 인가받는 트랜스퍼트랜지스터;상기 플로팅노드와 공급전원 사이에 소스-드레인 경로가 형성되며 게이트로 제2제어신호를 인가받는 제1리셋트랜지스터;게이트가 상기 플로팅노드에 접속되고 소스가 상기 공급전원에 접속된 드라이브트랜지스터;게이트에 상기 제3제어신호를 인가받으며 소스가 상기 드라이브트랜지스터의 드레인에 접속되며 자신의 드레인은 신호라인(Signal)에 접속된 셀렉트트랜지스터; 및상기 포토다이오드와 상기 공급전원 사이에 소스-드레인 경로가 형성되고 게이트로 상기 제2제어신호를 인가받는 제2리셋트랜지스터를 포함하여 이루어진 이미지센서의 단위화소.
- 제1항에 있어서,상기 제2리셋트랜지스터는 상기 트랜스퍼트랜지스터와 상기 제1리셋트랜지스터 보다 적은 문턱전압을 갖는 것을 특징으로 하는 이미지센서의 단위화소.
- 제1항에 있어서,상기 제1리셋트랜지스터와 상기 제2리셋트랜지스터의 각 게이트는 동일한 전도막으로 상호 연결되어 형성된 것을 특징으로 하는 이미지센서의 단위화소.
- 제1항에 있어서,상기 포토다이오드는 기판내의 도핑영역에 의해 형성되며 상기 제2리셋트랜지스터의 채널영역은 상기 포토다이오드 도핑영역에 직접 연결된 것을 특징으로 하는 이미지센서의 단위화소.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990046055A KR100312974B1 (ko) | 1999-10-22 | 1999-10-22 | 이미지센서의 단위 화소 |
US09/693,185 US6410901B1 (en) | 1999-10-22 | 2000-10-19 | Image sensor having blooming effect preventing circuitry |
JP2000322608A JP4584438B2 (ja) | 1999-10-22 | 2000-10-23 | イメージセンサ |
TW089127091A TW550810B (en) | 1999-10-22 | 2000-12-18 | Image sensor having blooming effect preventing circuitry |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990046055A KR100312974B1 (ko) | 1999-10-22 | 1999-10-22 | 이미지센서의 단위 화소 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010038178A KR20010038178A (ko) | 2001-05-15 |
KR100312974B1 true KR100312974B1 (ko) | 2001-11-07 |
Family
ID=19616515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990046055A KR100312974B1 (ko) | 1999-10-22 | 1999-10-22 | 이미지센서의 단위 화소 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6410901B1 (ko) |
JP (1) | JP4584438B2 (ko) |
KR (1) | KR100312974B1 (ko) |
TW (1) | TW550810B (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4117540B2 (ja) | 2002-10-17 | 2008-07-16 | ソニー株式会社 | 固体撮像素子の制御方法 |
KR20040036049A (ko) * | 2002-10-23 | 2004-04-30 | 주식회사 하이닉스반도체 | 필팩터가 개선된 씨모스 이미지 센서의 단위화소 |
US6888573B2 (en) * | 2002-10-31 | 2005-05-03 | Motorola, Inc. | Digital pixel sensor with anti-blooming control |
JP4208559B2 (ja) * | 2002-12-03 | 2009-01-14 | キヤノン株式会社 | 光電変換装置 |
FR2855326B1 (fr) * | 2003-05-23 | 2005-07-22 | Atmel Grenoble Sa | Capteur d'image matriciel en technologie cmos |
US20050224901A1 (en) * | 2004-03-30 | 2005-10-13 | Xinping He | Active pixel having buried transistor |
US20070018269A1 (en) * | 2005-07-21 | 2007-01-25 | Omnivision Technologies, Inc. | Raised silicon photodiode |
JP2008177593A (ja) * | 2008-02-18 | 2008-07-31 | Sony Corp | 固体撮像素子及びカメラ装置 |
US8093541B2 (en) | 2008-06-05 | 2012-01-10 | Aptina Imaging Corporation | Anti-blooming protection of pixels in a pixel array for multiple scaling modes |
FR2937150B1 (fr) * | 2008-10-15 | 2010-12-24 | Soc Fr Detecteurs Infrarouges Sofradir | Dispositif et procede pour realiser la lecture de courants electriques resultant d'un detecteur de signaux electromagnetiques |
WO2011133749A2 (en) * | 2010-04-21 | 2011-10-27 | Semiconductor Components Industries, Llc | Pixel architecture and method |
JP5299496B2 (ja) * | 2011-11-24 | 2013-09-25 | ソニー株式会社 | 固体撮像素子及びカメラ装置 |
CN108259790B (zh) * | 2018-04-02 | 2020-10-30 | 锐芯微电子股份有限公司 | 图像传感器像素电路及其工作方法 |
WO2021111848A1 (ja) | 2019-12-02 | 2021-06-10 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57181155A (en) * | 1982-04-16 | 1982-11-08 | Hitachi Ltd | Solid image pick-up device |
JPH07284024A (ja) * | 1994-04-07 | 1995-10-27 | Nippon Hoso Kyokai <Nhk> | 固体撮像素子 |
US5614744A (en) * | 1995-08-04 | 1997-03-25 | National Semiconductor Corporation | CMOS-based, low leakage active pixel array with anti-blooming isolation |
JP3915161B2 (ja) * | 1997-03-04 | 2007-05-16 | ソニー株式会社 | ブルーミング防止構造を備えた固体撮像素子のダイナミックレンジ拡大方法とその固体撮像素子 |
JPH1198415A (ja) * | 1997-09-24 | 1999-04-09 | Sharp Corp | 増幅型固体撮像装置 |
KR100246358B1 (ko) * | 1997-09-25 | 2000-03-15 | 김영환 | 전자셔터를 구비한 액티브 픽셀 센서 |
US6157016A (en) * | 1997-09-30 | 2000-12-05 | Intel Corporation | Fast CMOS active-pixel sensor array readout circuit with predischarge circuit |
JP3536896B2 (ja) * | 1998-03-24 | 2004-06-14 | 富士ゼロックス株式会社 | 固体撮像素子 |
US6300615B1 (en) * | 1998-08-31 | 2001-10-09 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus |
JP3667543B2 (ja) * | 1998-12-28 | 2005-07-06 | 富士通株式会社 | 固体撮像装置及び撮像方法 |
US6307195B1 (en) * | 1999-10-26 | 2001-10-23 | Eastman Kodak Company | Variable collection of blooming charge to extend dynamic range |
-
1999
- 1999-10-22 KR KR1019990046055A patent/KR100312974B1/ko active IP Right Grant
-
2000
- 2000-10-19 US US09/693,185 patent/US6410901B1/en not_active Expired - Lifetime
- 2000-10-23 JP JP2000322608A patent/JP4584438B2/ja not_active Expired - Lifetime
- 2000-12-18 TW TW089127091A patent/TW550810B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2001197368A (ja) | 2001-07-19 |
TW550810B (en) | 2003-09-01 |
KR20010038178A (ko) | 2001-05-15 |
JP4584438B2 (ja) | 2010-11-24 |
US6410901B1 (en) | 2002-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100312974B1 (ko) | 이미지센서의 단위 화소 | |
JP5539104B2 (ja) | 光電変換装置およびそれを用いた撮像システム | |
JP5538876B2 (ja) | 固体撮像装置 | |
KR100525895B1 (ko) | 씨모스 이미지 센서의 단위화소 | |
JP2006157000A (ja) | ベリードチャンネルmosトランジスタを具備したcmosイメージセンサ | |
KR100790228B1 (ko) | 시모스 이미지 센서 | |
US20060192234A1 (en) | Solid-state imaging device | |
KR100504562B1 (ko) | 씨모스 이미지 센서 | |
US12046607B2 (en) | Imaging device | |
US6974943B2 (en) | Active pixel cell using negative to positive voltage swing transfer transistor | |
KR100724255B1 (ko) | 시모스 이미지 센서 | |
KR20070106622A (ko) | 고체 촬상 장치 및 그 구동방법 | |
JP3624042B2 (ja) | 光電変換装置 | |
KR101003246B1 (ko) | Cmos 이미지센서 | |
US6111281A (en) | Solid-state image-pickup device and MOS transistor having a reduced incidental capacitance | |
KR20060077088A (ko) | 소스 팔로워에서 비대칭적인 웰의 배치를 갖는 씨모스이미지센서 | |
KR100373342B1 (ko) | 전하 역류를 억제할 수 있는 이미지 센서 | |
US10425601B1 (en) | Three-transistor active reset pixel | |
US20070096233A1 (en) | Cmos image sensor | |
KR20040038225A (ko) | 향상된 리셋 트랜지스터를 구비한 시모스 이미지센서의단위화소 | |
KR100521968B1 (ko) | 씨모스 이미지센서 및 그 제조방법 | |
KR100724254B1 (ko) | 이미지 센서 | |
KR100436060B1 (ko) | 전하운송효율을 높인 시모스 이미지센서 | |
KR100731125B1 (ko) | 씨모스 이미지 센서 | |
US20080179644A1 (en) | CMOS image sensor with drive transistor having asymmetry junction region |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120927 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20130927 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20140929 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20150930 Year of fee payment: 15 |
|
FPAY | Annual fee payment |
Payment date: 20160929 Year of fee payment: 16 |
|
FPAY | Annual fee payment |
Payment date: 20170929 Year of fee payment: 17 |
|
FPAY | Annual fee payment |
Payment date: 20180928 Year of fee payment: 18 |
|
FPAY | Annual fee payment |
Payment date: 20190924 Year of fee payment: 19 |