KR100291204B1 - Dialkyl indium azide compound and method for forming indium nitride film using the same - Google Patents
Dialkyl indium azide compound and method for forming indium nitride film using the same Download PDFInfo
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- KR100291204B1 KR100291204B1 KR1019980005057A KR19980005057A KR100291204B1 KR 100291204 B1 KR100291204 B1 KR 100291204B1 KR 1019980005057 A KR1019980005057 A KR 1019980005057A KR 19980005057 A KR19980005057 A KR 19980005057A KR 100291204 B1 KR100291204 B1 KR 100291204B1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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Abstract
Description
본 발명은 태양전지, 광소자 등에 사용되는 반도체 화합물인 질화인듐막의 형성방법에 관한 것이다. 보다 상세히 설명하면, 본 발명은 비스[μ-(아지도-N, N′)테트라메틸]디인듐을 포함한 디알킬 인듐 아지드 화합물과 상기 화합물을 단일 선구 물질로 사용하여 화학 증착법으로 350∼500℃의 낮은 온도 범위에서 육방형 질화인듐의 막을 저가의 규소(111) 기질 위에 형성하는 방법에 관한 것이다.The present invention relates to a method for forming an indium nitride film, which is a semiconductor compound used for solar cells, optical devices, and the like. In more detail, the present invention uses a dialkyl indium azide compound including bis [μ- (azido-N, N ′) tetramethyl] diindium and the compound as a single precursor, and 350 to 500 by chemical vapor deposition. A method of forming a hexagonal indium nitride film on a low-cost silicon (111) substrate in the low temperature range of < RTI ID = 0.0 >
질화인듐(InN)은 상온에서 약 1.9eV 크기의 직접 전이형의 밴드갭을 지니고, 순수한 물질은 상온에서 1800cm2V-1s-1에 달하는 높은 전자 유도성을 보이는 육박형 결정 구조의 화합물 반도체다. 최근에는 고효율의 저비용 태양 전지, 가시광 영역의 고효율 광소자, 광스위치 소자 등으로서 잠재적 응용성 때문에 주목받고 있는 물질이다. 또한 그 박막은 가하는 전압에 따라 가역적으로 색이 변하는 전기 변색 현상도 보인다. 특히 InxA11-xN,InxGa1-xN 혼정은 밴드갭을 1.9 에서 6.2eV 까지 변화가 가능하므로, 자외선 영역부터 오렌지 영역까지를 방출하는 광학 소자로 관심을 모으고 있다.Indium nitride (InN) has a direct transition bandgap of about 1.9 eV at room temperature, and pure material is a thin semiconductor crystal semiconductor with high electron induction of 1800 cm 2 V -1 s -1 at room temperature All. Recently, the materials have attracted attention because of their potential applications as high efficiency, low cost solar cells, high efficiency optical devices in the visible region, and optical switch devices. The thin film also exhibits an electrochromic phenomenon in which the color reversibly changes depending on the applied voltage. In particular, the In x A1 1-x N and In x Ga 1-x N mixed crystals are attracting attention as optical devices that emit from the ultraviolet region to the orange region because the band gap can be changed from 1.9 to 6.2 eV.
쥬자(Juza)가 1938년에 질화인듐의 육방형 결정 구조를 처음으로 보고한 이래[R, Juza, R. ;Hahn, H. Z. Anorg. Allg. Chem. 1938, 239, 282] 양질의 질화인듐 박막을 얻기 위한 노력이 경주되었으며 반응성 스퍼트링 법, 반응성 증발법, 마이크로파 여기 유기금속 화학 증착법, 분자살 적층 성장법, 수소화물 기상 적층 성장법 등의 여러 가지 방법이 최근 수십 년간 시도되고 있다.Since Juza first reported the hexagonal crystal structure of indium nitride in 1938 [R, Juza, R.; Hahn, H. Z. Anorg. Allg. Chem. 1938, 239, 282] Efforts have been made to obtain high quality indium nitride thin films, including reactive sputtering, reactive evaporation, microwave-excited organometallic chemical vapor deposition, molecular mass deposition, and hydride vapor deposition. The method has been tried in recent decades.
그러나 이러한 방법으로 양질의 질화인듐 박막을 얻는 데는 몇가지 어려움이 따르는 것으로 알려져 있다. 첫째는 박막을 증착할 때 흔히 트리메틸인듐과 암모니아를 사용하는데 암모니아의 열적 안정성이 높아서 기질의 온도를 900℃ 이상 높이 올려야 한다. 그러나 질화인듐은 질소 하에서는 500℃, 공기 중에서는 300℃에서 인듐 금속과 질소로 분해되어 열적 안전성이 매우 낮으므로 낮은 온도에서의 성장이 절대적으로 필요하다. 따라서 고온에서 제조된 질화인듐은 질소의 함량이 낮아져서 생기는 질소 빈자리로 인해 n형 운반체의 농도가 커지게 된다. 또한 다층막의 성장에서는 층간의 확산 현상이 더욱 활발하게 일어나고 열적 안정성이 낮은 박막을 같은 기질 위에 적층 성장 시킬수 없다는 단점이 있다. 둘째는 증기압이 다른 트리메틸 인듐과 암모니아를 원료 물질로 사용하므로 박막의 조성을 정량적으로 조절하기 어렵다는 점이다.However, it is known that there are some difficulties in obtaining a high quality indium nitride thin film in this way. First, when thin film is deposited, trimethylindium and ammonia are often used. The thermal stability of ammonia is high, so the temperature of the substrate must be raised to 900 ° C or higher. However, indium nitride is decomposed into indium metal and nitrogen at 500 ° C. under nitrogen and 300 ° C. in air, so that thermal stability is very low, so growth at low temperatures is absolutely necessary. Therefore, the indium nitride prepared at high temperature increases the concentration of the n-type carrier due to the nitrogen vacancies caused by the low nitrogen content. In addition, the growth of the multi-layered film has a disadvantage in that the diffusion phenomenon between the layers is more active and the low thermal stability of the thin film can not be laminated on the same substrate. Second, since trimethyl indium and ammonia having different vapor pressures are used as raw materials, it is difficult to quantitatively control the composition of the thin film.
셋째는 박막의 재료로 사용되는 트리메틸인듐은 산소와 반응성이 강해 취급이 용이하지 않고 장시간 사용하는 동안에 분해하거나 그 증기압이 감소하게 된다. 또한 암모니아는 부식성이 강한 문제가 있다. 이러한 문제점을 해결하기 위해 인듐과 질소가 한 분자내에 포함되어 있는 유기금속 화합물을 단일 선구 물질로 사용하는 연구가 진행되고 있으나, 단일 선구 물질로서의 인듐 화합물은 많이 연구가 되어 있지 않다. 낮은 온도에서의 박막 증착을 위해서는 반응성이 큰 질소 원료를 필요로 하는데 암모니아 또는 아민 화합물은 낮은 온도에서 비교적 높은 열적 안정성을 보이므로 열분해 하면 순수한 인듐 금속만이 얻어진다. 단일 선구 물질을 이용한 질화인듐의 박막 증착은 최근에 사례가 보고되었다. 피셔(Fischer)등이 (N3)In[(CH2)3NMe2]2화합물로 비소화갈륨 기질 위에 350℃∼500℃에서 다결정질의 질화인듐 박막 증착을 보고하였다. [(a) Fischer, R. A.; Miehr, A.; Metzger, T.; Born, E.; Ambacher, O.; Angerer, H.; Dimitrov, R.; Chem. Mater. 1996, 8, 1356. (b) Fischer, R. A.; Miehr, A.; Ambacher, 0.;Metzer, T.; Born, E. J. Cryst. Growth 1997, 170, 139.] 또한 부(Bu)등은 본 발명에서 개시한 비스[μ-(아지도-N, N′)테트라메틸]디인듐의 반응물에 해당하는 트리메틸인듐을 인듐 원료로 수소화 아지드를 질소 원료로 사용할 때, 열분해로는 질화인듐 막을 규소(100)위에 증착시킬 수 없고 고가의 레이저 장비를 사용해야만 된다고 보고하였다. [(a) Bu, Y.; Lin, M. C. Mat. Res. Soc. Symp. Proc. 1994, 335, 21. (b) Bu, Y.; Ma, L.; Lin, M. C. J. Vac. Sci. Techol. 1993,A11.2931.] 미국특허 USP 5,675,028호는 사용된 선구물질의 합성단계가 길어지는 단점으로 인하여 이를 이용한 질화인듐박막의 증착은 실시되지 않았다.Third, trimethyl indium, which is used as a thin film material, is highly reactive with oxygen, which is not easy to handle and decomposes during long time use or its vapor pressure decreases. In addition, ammonia has a strong corrosive problem. In order to solve this problem, studies have been made to use an organometallic compound containing indium and nitrogen in one molecule as a single precursor, but indium compounds as a single precursor have not been studied. The thin film deposition at low temperature requires a highly reactive nitrogen source. Since ammonia or amine compounds have relatively high thermal stability at low temperatures, only pure indium metal is obtained when pyrolyzed. Thin film deposition of indium nitride using a single precursor material has recently been reported. Fischer et al reported the deposition of polycrystalline indium nitride thin films on gallium arsenide substrates with (N 3 ) In [(CH 2 ) 3 NMe 2 ] 2 compounds at 350 ° C. to 500 ° C. [(a) Fischer, RA; Miehr, A .; Metzger, T .; Born, E .; Ambacher, O .; Angerer, H .; Dimitrov, R .; Chem. Mater. 1996, 8, 1356. (b) Fischer, RA; Miehr, A .; Ambacher, 0 .; Metzer, T .; Born, EJ Cryst. Growth 1997, 170, 139.] Bu et al. Hydrogenated trimethylindium, which is a reactant of bis [μ- (azido-N, N ′) tetramethyl] diindium, disclosed in the present invention, as an indium source. When using azide as a nitrogen source, it has been reported that pyrolysis cannot deposit an indium nitride film on silicon 100 and requires expensive laser equipment. [(a) Bu, Y .; Lin, MC Mat. Res. Soc. Symp. Proc. 1994, 335, 21. (b) Bu, Y .; Ma, L .; Lin, MCJ Vac. Sci. Techol. 1993, A11.2931.] U.S. Pat.No. 5,675,028 did not perform deposition of the indium nitride thin film using the precursor due to the disadvantage of prolonging the synthesis step.
본 발명의 기술적 과제는 단일선구물질을 사용하여 값싼 규소(111)기질을 사용하여 저온에서 증착하는데 있어서, 단일 선구 물질을 인듐과 질소의 결합이 충분히 강하다면 분자의 조성비를 박막의 조성비로 전달할 수 있기 때문에 박막의 조성을 정량적으로 조절하기가 용이하고, 또한 산소와의 반응성이 낮으므로 취급이 용이하다. 또한 금속과 질소의 치환체가 낮은 에너지의 분해 경로를 통해 쉽게 제거되도록 적절한 화학적 디자인을 하면 박막의 증착 온도를 상당히 낮출 수 있으므로 저온에서 박막 제조에 매우 유리하다.The technical task of the present invention is to deposit a single precursor material at a low temperature using a cheap silicon (111) substrate using a single precursor material, and if the indium and nitrogen bonds are sufficiently strong, the composition ratio of the molecules can be transferred to the composition ratio of the thin film. Therefore, it is easy to quantitatively control the composition of the thin film, and the handling is easy because the reactivity with oxygen is low. In addition, proper chemical design so that substituents of metal and nitrogen can be easily removed through low energy decomposition pathways can significantly lower the deposition temperature of the thin film, which is very advantageous for thin film production at low temperatures.
본 발명에서 화학 증착법에 의해 질화인듐 막을 제조하는데 사용하는 단일 선구 물질은 하기의 일반식[1]으로 표시된다.In the present invention, a single precursor material used for producing an indium nitride film by chemical vapor deposition is represented by the following general formula [1].
[R2In-N3]n............... [1][R 2 In-N 3 ] n ............... [1]
상기에서 R은 수소, C1∼C12의 알킬과 아릴, 알킬이 치환된 아릴, 할로겐 원소, 고리알킬에서 선택된 어느 하나이며, n은 n ≥ 1의 조건을 만족한다.R is any one selected from hydrogen, C 1 -C 12 alkyl and aryl, alkyl substituted aryl, halogen, and cyclic alkyl, and n satisfies the condition of n ≧ 1.
상기화합물은 아지드기가 열 또는 빛에 의해 질소를 내며 쉽게 분해가 되는 특징이 있으므로 질화인듐막의 형성시 요구되는 저온증착에 유리한 화합물이다.The compound is a compound which is advantageous for the low temperature deposition required for the formation of the indium nitride film because the azide group emits nitrogen by heat or light and is easily decomposed.
상기 디알킬 인듐 아지드화합물은 특히 120℃에서 휘발성이 있는 고체인 비스[μ-(아지도-N, N′)테트라메틸]디인듐을 포함한다.The dialkyl indium azide compounds include bis [μ- (azido-N, N ′) tetramethyl] diindium, which is in particular a solid volatile at 120 ° C.
또한 본 발명은 상기 디알킬 아지드화합물을 이용한 질화인듐막의 형성방법을 포함한다.The present invention also includes a method for forming an indium nitride film using the dialkyl azide compound.
본 발명의 질화인듐막의 형성방법은 상기 일반식[1]으로 표시되는 화합물을 질화인듐막용 단일선구물질로 하고, 화학증착법에 의하여 350∼500℃의 온도범위에서 규소(111)기질 위에 육방형 질화인듐막을 형성하는 방법을 개시한다.In the method of forming the indium nitride film of the present invention, the compound represented by the general formula [1] is used as a single precursor for the indium nitride film, and the hexagonal nitride is formed on the silicon 111 substrate in the temperature range of 350 to 500 ° C by chemical vapor deposition. A method of forming an indium film is disclosed.
본 발명의 수행에 있어서 질화인듐막을 화학증착하는 데 사용된 장치는 확산 펌프가 장착된 고진공(∼10-7Torr) 화학 증착 장치이다. 이 장치는 석영관과 스테인레스 강관으로 된 플랜지(flange)를 사용하여 구리 가스켓을 쓰는 형태로 접합시킨 찬 벽(cold wall)형태이며, 내부의 진공도 및 선구 물질의 증기압을 조절할 수 있는 고진공용 밸브들이 연결되어 있다. 기질의 온도는 광학 고온계를 측정하였다.The apparatus used to chemically deposit the indium nitride film in the practice of the present invention is a high vacuum (˜10 -7 Torr) chemical vapor deposition apparatus equipped with a diffusion pump. The device is a cold wall, which is made by joining copper gaskets using flanges made of quartz and stainless steel pipes, and has high vacuum valves to control the vacuum and the vapor pressure of the precursors. It is connected. The temperature of the substrate was measured by an optical pyrometer.
[합성예]Synthesis Example
[비스[μ-(아지드-N, N′)테트라메틸]디인듐의 제조][Production of bis [μ- (azide-N, N ′) tetramethyl] diindium]
트리메틸인듐[In(CH3)3]40.5g의 톨루엔 용액에 수소화 아지드(NH3) 에틸에테르 용액(3.1M, 0.8g)을 -78℃에서 가한 다음 1시간 동안 교반시킨다. 반응 온도를 0℃까지 올리고 교반하면서 2시간 동안 반응시킨 다음 진공 하에서 용매를 제거하여 흰색 고체 0.4g을 얻었다. 이 고체의1H NMR,13C NMR, 적외선 스펙트럼, 질량 스펙트럼, 원소 분석, 결정구조 연구를 통하여 비스[μ-(아지드-N, N′)테트라메틸]디인듐이 합성되었음을 확인하였다.To 0.5 g of toluene solution of trimethylindium [In (CH 3 ) 3 ] 4 was added a hydrogenated azide (NH 3 ) ethyl ether solution (3.1 M, 0.8 g) at −78 ° C. and stirred for 1 hour. The reaction temperature was raised to 0 ° C. and reacted for 2 hours with stirring, and then the solvent was removed under vacuum to obtain 0.4 g of a white solid. Bis [μ- (azide-N, N ′) tetramethyl] diindium was synthesized through 1 H NMR, 13 C NMR, infrared spectrum, mass spectrum, elemental analysis, and crystal structure studies of the solid.
1H NMR(CDCl3, 20℃): δ 0.15(6H, s, In-CH3). MS(El, 40 eV):m/x 359[M-Me]+. 1 H NMR (CDCl 3 , 20 ° C.): δ 0.15 (6H, s, In—CH 3 ). MS (El, 40 eV): m / x 359 [M-Me] + .
이하 실시예를 통하여본 발명을 더욱 상세히 설명한다. 단, 본 발명의 범위가 하기 실시예 만으로 한정되는 것은 아니고 다만 대표적인 실험 방법들을 기술하는 것이다.The present invention will be described in more detail with reference to the following examples. However, the scope of the present invention is not limited only to the following examples, but merely to describe representative experimental methods.
[실시예 1]Example 1
비스[μ-(아지드-N, N′)테트라메틸]디인듐 0.1g을 용기에 넣고 그 온도를 120℃로 유지하고 1.5 x 10-7Torr의 바탕 압력에서 규소(111) 기질을 350℃로 가열하면서 비스[μ-(아지드-N, N′)테트라메틸]디인듐의 증기압을 밸브로 조절하여 전체 압력을 1.3 x 10-6Torr로 맞추고 30 시간 동안 화학 증착을 수행하였다. 증착된 질화인듐 막을 보라색이었으며 형성된 막을 X선 광전자 분광법으로 분석하여 인듐과 질소가 1.00 : 0.43의 조성비로 구성되었음을 확인하였다. 이 막을 X선회절법으로 2θ를 20∼100° 범위에서 변화시켜 측정한 결과 31.3°(002 면) , 33.0°(101 면), 43.3°(102 면), 51.6°(110 면), 56.8°(103 면), 61.6°(112 면), 62.9°(201 면), 65.3°(004 면), 95.0°(204 면)에서 질화인듐의 회절 봉우리를 관찰하였고, 이로 보아 질화인듐 막이 다결정성임을 알 수 있다.0.1 g of bis [μ- (azide-N, N ′) tetramethyl] diindium was placed in a vessel and maintained at 120 ° C., and the silicon (111) substrate was placed at 350 ° C. at a background pressure of 1.5 × 10 −7 Torr. The vapor pressure of bis [μ- (azide-N, N ′) tetramethyl] diindium was adjusted with a valve while heating to adjust the total pressure to 1.3 × 10 −6 Torr and chemical vapor deposition was carried out for 30 hours. The deposited indium nitride film was purple and the formed film was analyzed by X-ray photoelectron spectroscopy to confirm that indium and nitrogen were composed of a composition ratio of 1.00: 0.43. The film was measured by varying 2θ in the range of 20 to 100 ° by X-ray diffraction. 31.3 ° (002 plane), 33.0 ° (101 plane), 43.3 ° (102 plane), 51.6 ° (110 plane), 56.8 ° (103 plane), 61.6 ° (112 plane), 62.9 ° (201 plane), 65.3 ° (004 plane), 95.0 ° (204 plane), the diffraction peaks of indium nitride were observed, indicating that the indium nitride film was polycrystalline. Able to know.
[실시예 2]Example 2
비스[μ-(아지드-N, N′)테트라메틸]디인듐 0.1g을 용기에 넣고 그 온도를 120℃로 유지하고 2.2 x 10-7Torr 의 바탕 압력에서 규소(111) 기질을 400℃로 가열하면서 비스[μ-(아지드-N, N′)테트라메틸]디인듐의 증기압을 밸브로 조절하여 전체 압력을 1.6 x 10-6Torr로 맞추고 28시간 동안 화학 증착을 수행하였다. 증착된 질화인듐 막은 검은 색이었으며 그 두께는 SEM 파단면 사진으로부터 0.63㎛임이 확인되었다. 증착된 질화인듐 막의 특성은 실시예 1과 거의 같았다.0.1 g of bis [μ- (azide-N, N ′) tetramethyl] diindium was placed in a vessel and maintained at 120 ° C., and the silicon (111) substrate was placed at 400 ° C. at a background pressure of 2.2 × 10 −7 Torr. The vapor pressure of bis [μ- (azide-N, N ′) tetramethyl] diindium was adjusted with a valve while heating to adjust the total pressure to 1.6 × 10 −6 Torr and chemical vapor deposition was carried out for 28 hours. The deposited indium nitride film was black and its thickness was found to be 0.63 μm from the SEM fracture photograph. The properties of the deposited indium nitride film were almost the same as in Example 1.
[실시예 3]Example 3
비스[μ-(아지드-N, N′)테트라메틸]디인듐 0.1g을 용기에 넣고 그 온도를 120℃로 유지하고 2.6 x 10-7Torr 의 바탕 압력에서 규소(111) 기질을 450℃로 가열하면서 비스[μ-(아지드-N, N′)테트라메틸]디인듐의 증기압을 밸브로 조절하여 전체 압력을 1.7 x 10-6Torr로 맞추고 30시간 동안 화학 증착을 수행하였다. 증착된 질화인듐 막은 검은 색이었으며 그 두께는 SEM 파단면 사진으로부터 4.4㎛임이 확인되었다. 증착된 질화인듐 막의 특성은 실시예 1과 거의 같았다.0.1 g of bis [μ- (azide-N, N ′) tetramethyl] diindium was placed in a vessel and kept at 120 ° C., and the silicon (111) substrate was placed at 450 ° C. at a background pressure of 2.6 × 10 −7 Torr. The vapor pressure of bis [μ- (azide-N, N ′) tetramethyl] diindium was adjusted with a valve while heating to adjust the total pressure to 1.7 × 10 −6 Torr and chemical vapor deposition was carried out for 30 hours. The deposited indium nitride film was black and its thickness was found to be 4.4 μm from the SEM fracture photograph. The properties of the deposited indium nitride film were almost the same as in Example 1.
[실시예 4]Example 4
비스[μ-(아지드-N, N′)테트라메틸]디인듐 0.1g을 용기에 넣고 그 온도를 120℃로 유지하고 2.0 x 10-7Torr 의 바탕 압력에서 규소(111) 기질을 500℃로 가열하면서 비스[μ-(아지드-N, N′)테트라메틸]디인듐의 증기압을 밸브로 조절하여 전체 압력을 1.9 x 10-6Torr로 맞추고 6시간 동안 화학 증착을 수행하였다. 증착된 질화인듐 막은 푸른 색이었으며 그 두께는 SEM 파단면 사진으로부터 0.58㎛임이 확인되었다. 증착된 질화인듐 막의 특성은 실시예 1과 거의 같았다.0.1 g of bis [μ- (azide-N, N ′) tetramethyl] diindium was placed in a vessel and kept at 120 ° C., and the silicon (111) substrate was brought to 500 ° C. at a background pressure of 2.0 × 10 −7 Torr. The vapor pressure of bis [μ- (azide-N, N ′) tetramethyl] diindium was adjusted with a valve while heating to adjust the total pressure to 1.9 × 10 −6 Torr and chemical vapor deposition was carried out for 6 hours. The deposited indium nitride film was blue in color and the thickness was found to be 0.58 μm from the SEM fracture surface photograph. The properties of the deposited indium nitride film were almost the same as in Example 1.
본 발명에서는 기존의 단일선구물질을 이용하여 제조된 질화 인듐 박막보다 더 뛰어난 결정성을 나타내는 박막을 고가의 비소갈륨 기질이 아닌 값싼 규소(111) 기질 위에 제조할 수 있다. 또한 사용된 단일선구물질의 합성 방법이 트리알킬인듐과 수소화 아지드를 저온에서 혼합하여 수시간 반응한 후 용매만 제거하면 되므로 합성이 아주 용이하다. 이와 같이 본 발명의 디알킬 인듐 아지드를 이용한 질화물 막의 형성 방법은 양산화에 아주 유리한 장점들을 지니고 있으므로, 이를 이용한 박막을 제조하면 반도체 소자 분야에서 기술 수입을 대체할 수 있는 효과가 예상된다.In the present invention, a thin film exhibiting better crystallinity than a conventional indium nitride thin film manufactured using a single precursor material may be manufactured on an inexpensive silicon 111 substrate rather than an expensive arsenic gallium substrate. In addition, the synthesis method of the single precursor used is very easy to synthesize because trialkyl indium and hydrogenated azide are mixed at low temperature for several hours, and only the solvent is removed. As described above, since the method of forming the nitride film using the dialkyl indium azide of the present invention has advantages that are very advantageous for mass production, it is expected that the manufacturing of the thin film using the same may replace the import of technology in the field of semiconductor devices.
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