KR100231933B1 - Gold alloy for bonding wire of semiconductor device - Google Patents

Gold alloy for bonding wire of semiconductor device Download PDF

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KR100231933B1
KR100231933B1 KR1019960077607A KR19960077607A KR100231933B1 KR 100231933 B1 KR100231933 B1 KR 100231933B1 KR 1019960077607 A KR1019960077607 A KR 1019960077607A KR 19960077607 A KR19960077607 A KR 19960077607A KR 100231933 B1 KR100231933 B1 KR 100231933B1
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bonding
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gold alloy
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KR19980058284A (en
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강도원
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강도원
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

본 발명은 반도체칩과 리드프레임을 연결하는데 사용하는 본딩 와이어용 합금에 대한 것으로, 보다 상세하게는 본딩후 상온 및 고온 강도가 양호하고 본딩시 볼 사이즈를 작게 제어할 수 있으며 와이어의 쇼트 현상을 방지할 수 있는 반도체 소자의 본딩 와이어용 금합금에 대한 것이다.The present invention relates to an alloy for a bonding wire used to connect a semiconductor chip and a lead frame. More specifically, the bonding temperature is good at room temperature and high temperature after bonding, and the ball size can be controlled to be small during bonding, and a short circuit of the wire is prevented. The present invention relates to a gold alloy for bonding wires in semiconductor devices.

본 발명의 금합금은, 중량%로, Pd:0.5~5.0%, Ba:5~50 ppm, Be 와 Ca 중의 어느 하나 이상을 각각 1~10 ppm, 나머지 Au로 이루어진 것을 특징으로 한다.The gold alloy of the present invention is characterized in that, by weight%, Pd: 0.5 to 5.0%, Ba: 5 to 50 ppm, any one or more of Be and Ca are each composed of 1 to 10 ppm and the remaining Au.

이와 같은 본 발명에 의하여 본딩 후 상온 및 고온강도가 양호하고 본딩시 볼 사이즈를 작게 제어할 수 있으며, 와이어의 쇼트 현상을 방지할 수 있는 등의 효과가 제공된다.According to the present invention, after bonding, room temperature and high temperature strength are good and the ball size can be controlled to be small during bonding, and the short phenomenon of the wire can be prevented.

Description

반도체 소자의 본딩 와이어용 금합금Gold Alloys for Bonding Wires in Semiconductor Devices

본 발명은 반도체칩과 리드프레임을 연결하는데 사용하는 본딩 와이어용 합금에 대한 것으로, 보다 상세하게는 본딩후 상온 및 고온 강도가 양호하고 본딩시 볼 사이즈를 작게 제어할 수 있으며 와이어의 쇼트 현상을 방지할 수 있는 반도체 소자의 본딩 와이어용 금합금에 대한 것이다.The present invention relates to an alloy for a bonding wire used to connect a semiconductor chip and a lead frame. More specifically, the bonding temperature is good at room temperature and high temperature after bonding, and the ball size can be controlled to be small during bonding, and a short circuit of the wire is prevented. The present invention relates to a gold alloy for bonding wires in semiconductor devices.

일반적으로 사용되는 반도체 소자의 본딩 와이어 소재는 99.999% 이상의 고순도 금에 수 ppm 또는 수십 ppm의 첨가 원소(이하 도판트(Dopant) 라고 함)를 합금화하여 제조한 것으로, 도판트의 종류 및 양에 따라 와이어의 기계적 특성이 결정되었다.The bonding wire material of the semiconductor device generally used is manufactured by alloying a high purity gold of 99.999% or more with several ppm or tens of ppm of additional elements (hereinafter referred to as dopant), depending on the type and amount of dopant. The mechanical properties of the wire were determined.

그러나, 반도체 패키지(Package)는 그 종류가 대단히 많고 와이어의 본딩 방법이 각기 상이하기 때문에 각각의 패키지 특성에 적합한 와이어를 선택하여 사용하는 것이 매우 중요하다.However, since there are many kinds of semiconductor packages and the bonding methods of the wires are very different, it is very important to select and use a wire suitable for each package characteristic.

또한, 최근에는 반도체칩이 극도로 소형화되고 고밀도 실장 기술이 급속히 발달함에 따라 본딩 와이어로 연결해야 하는 단자수가 점차 많아지고, 이에 따라 본딩 패드 자체의 극소화는 물론 패드와 패드간의 간격이 극히 좁아지게 되어 이에 대응할 수 있는 본딩 와이어가 요구되는 실정이다.In addition, in recent years, as semiconductor chips become extremely small and high-density packaging technology is rapidly developed, the number of terminals to be connected with bonding wires gradually increases, thereby minimizing the bonding pads themselves and the gap between the pads and pads becomes extremely narrow. There is a need for a bonding wire that can cope with this.

상기 설명한 바와 같은 반도체 패키징 추세에 있어서 다음과 같은 특성들이 요구되었다.The following characteristics are required in the semiconductor packaging trend as described above.

즉, 본딩된 와이어간의 간격이 가까워짐에 따라 본딩된 와이어가 휘거나 구부러지지 않도록 상온 및 고온강도가 높은 것이 필요하다.That is, it is necessary to have a high temperature and high temperature strength so that the bonded wire is not bent or bent as the gap between the bonded wires approaches.

또한, 본딩될 패드의 간격이 극소화됨에 따라 본딩시 볼 사이즈를 작게 제어할 수 있어야 하며, 본딩 후 접합 강도가 양호해야 하며, 본딩 길이가 길고 간격이 좁아짐에 따라 수지 모울드 와이어의 스위핑(Sweeping;쏠림) 현상을 최소화하여 와이어끼리 쇼트(Shot)되는 현상을 방지할 수 있어야 한다.In addition, as the spacing of the pads to be bonded is minimized, the ball size can be controlled at the time of bonding, the bonding strength must be good after bonding, and the sweeping of the resin mold wire is performed as the bonding length is long and the spacing is narrowed. It should be possible to prevent the shorting of wires by minimizing the phenomenon.

따라서, 본 발명은 상기 설명한 바와 같은 반도체 패키징 추세에서 요구되는 특성들을 구비한 반도체 소자의 본딩 와이어용 금합금을 제공하기 위하여 이루어진 것으로, 본딩 후 상온 및 고온 강도가 양호하고 본딩시 볼 사이즈를 작게 제어할 수 있으며, 와이어의 쇼트 현상을 방지할 수 있는 반도체 소자의 본딩 와이어용 금합금을 제공하는데 그 목적이 있다.Accordingly, the present invention has been made in order to provide a gold alloy for a bonding wire of a semiconductor device having the characteristics required in the semiconductor packaging trend as described above. The present invention can provide a gold alloy for bonding wires in semiconductor devices capable of preventing short circuits of wires.

상기 목적을 달성하기 위하여 본 발명에서는, 중량%로, Pd:0.5~5.0%, Ba:5~50 ppm, Be와 Ca 중의 어느 하나 이상을 각각 1~10 ppm, 나머지 Au로 이루어진 것을 특징으로 하는 반도체 소자의 본딩 와이어용 금합금을 제공한다.In order to achieve the above object, in the present invention, Pd: 0.5 ~ 5.0%, Ba: 5 ~ 50 ppm, at least one of Be and Ca, characterized in that each consisting of 1 ~ 10 ppm, the remaining Au Provided is a gold alloy for bonding wires in semiconductor devices.

이하에서는 본 발명에 따른 반도체 소자의 본딩 와이어용 금합금에 대해 상세하게 설명한다.Hereinafter, the gold alloy for bonding wires of the semiconductor device according to the present invention will be described in detail.

본 발명에 따른 반도체 소자의 본딩 와이어용 금합금은 2단계의 정제, 즉 전기화학적 정제 방법 및 국부 용해 정제 방법으로 정제된 99.999% 이상의 고순도 금에 Pd:0.5~5.0 wt.%, Ba:5~50 ppm, Be와 Ca 중의 어느 하나 이상을 각각 1~10 ppm 첨가함으로써 반도체 소자의 본딩 와이어용 금합금을 제조하여 와이어에 요구되는 여러 가지 특성을 향상시켰다.Gold alloy for the bonding wire of the semiconductor device according to the present invention is Pd: 0.5 ~ 5.0 wt.%, Ba: 5 ~ 50 in 99.999% or more high-purity gold purified by two-stage purification, electrochemical purification method and locally dissolved purification method By adding 1-10 ppm or more of any one of ppm, Be, and Ca, respectively, a gold alloy for bonding wire of a semiconductor device was manufactured to improve various properties required for the wire.

이하에서는 본 발명의 반도체 소자의 본딩 와이어용 금합금을 구성하는 각 성분의 작용 및 수차 한정 이유에 대하여 설명한다.Hereinafter, the operation of each component constituting the gold alloy for bonding wire of the semiconductor element of the present invention and the reason for limiting aberration will be described.

Pd는 금(Au)과 전율 고용체를 형성하여 상온에서 인장 강도가 상승함은 물론 고온에서의 인장 강도도 상승하여 와이어 본딩 후 와이어가 휘거나 처지는 현상을 방지할 수 있게 된다. 또한 볼(Ball) 형성시 열을 많이 받는 볼 네크(Neck) 부분의 결정 성장을 억제하여 본딩시 루프가 높아지는 현상을 방지하고 볼 네크 부분의 고온 강도를 향상시킨다. 이때 Pd의 함유량이 0.5% 미만이면 위와 같은 효과가 별로 나타나지 않고, 5% 이상에서는 와이어가 너무 브리틀(Brittle)해져서 본딩시 패드 부분과 접착이 잘 안되는 문제가 발생하므로 Pd의 조성 범위를 0.5~5 wt.% 로 한정한다.Pd forms a thermally solid solution with gold (Au) to increase the tensile strength at room temperature as well as to increase the tensile strength at high temperature, thereby preventing the wire from bending or sagging after wire bonding. In addition, by suppressing the crystal growth of the ball neck portion that receives a lot of heat during the formation of the ball (Ball) to prevent the phenomenon of high loop during bonding and to improve the high temperature strength of the ball neck portion. At this time, if the content of Pd is less than 0.5%, the above effects are not shown much. If the content of Pd is more than 5%, the wire becomes too brittle and the adhesion with the pad part during bonding occurs, so that the composition range of Pd is 0.5 ~. It is limited to 5 wt.%.

Ba은 고온에서의 인장 강도를 높이고 열처리시 결정이 커지는 것을 억제하여 전체적으로 미세 결정립을 가진 조직을 형성하므로 루프(Loop) 형성 후 와이어의 처짐(Sagging)이 억제되고, 또한 수지 모울딩시 와이어가 쏠려(Sweeping) 쇼트되는 현상을 방지한다. 또한, 이 원소를 첨가하게 되면 재료의 가공시 내부 응력이 증가하게 되어 와이어 본딩시 볼을 형성하기 위해 열을 가할 때 재료에 잔류 응력이 많이 남아 있어서 볼의 크기가 작아지게 된다. 이러한 성질이 종래의 Au-Pd 합금 와이어(일본 특허 공개 소 62-23455호)에 비해 우수한 성질이다. 첨가량이 5 ppm 미만에서는 효과가 미미하고 50 ppm을 넘으면 와이어가 너무 강하게 되어 본딩시 루프가 불균일하게 형성된다.Ba increases the tensile strength at high temperature and suppresses the crystal growth during heat treatment, thereby forming a structure having fine grains as a whole. Therefore, sagging of the wire is suppressed after loop formation, and the wire is pulled during resin molding. (Sweeping) Prevents short circuiting. In addition, the addition of this element increases the internal stress during the processing of the material, so that when the heat is applied to form the ball during wire bonding, the residual stress remains in the material, thereby reducing the size of the ball. This property is superior to the conventional Au-Pd alloy wire (Japanese Patent Laid-Open No. 62-23455). If the addition amount is less than 5 ppm, the effect is insignificant and if it exceeds 50 ppm, the wire becomes too strong, resulting in uneven loops upon bonding.

Be은 상온에서의 인장 강도를 높이고 볼 형성시 결정립을 미세화시켜 루프 형성 후 와이어의 굴곡을 억제하는 효과를 가진다. 1 ppm 이하에서는 효과가 나타나지 않고, 10 ppm을 넘으면 오버 도핑(Over Doping)에 의해 와이어 본딩 후 볼 네크 부분에서 취성 파단(Brittle Failure)이 일어날 수 있다. 따라서 1~10 ppm으로 한정한다.Be has the effect of suppressing the bending of the wire after loop formation by increasing the tensile strength at room temperature and miniaturizing the crystal grains during ball formation. If the effect is less than 1 ppm, and if it exceeds 10 ppm, brittle failure may occur at the ball neck portion after wire bonding by over doping. Therefore, it is limited to 1-10 ppm.

Ca은 재료의 열적 저항을 높여 고온에서의 인장 강도를 향상시키고 볼 네크 부분에서의 결정 성장을 억제하여 루프가 높아지는 것을 방지할 수 있다. 또한, 항복 강도가 높아져 인성이 커지는 효과를 나타내는데, 인성이 높아지면 볼 본딩 후 볼 네크 부분에서의 파단이 감소되고 특히 와이어를 가늘게 가공하여 적용하더라도 네크 절단을 억제할 수 있다. 또한, 본딩시 와이어가 휘더라도 탄성 영역이 높아 원래의 루프 형상으로 복원될 수 있는 장점을 가지게 된다. 첨가량이 1 ppm 이하에서는 효과가 나타나지 않고 10 ppm을 넘으면 결정립계로 첨가물이 모여 취약한 성질을 나타내게 되며 와이어의 가공 경화도가 높아져 본딩시 칩균열을 일으키게 된다. 따라서 1~10 ppm으로 범위를 한정한다.Ca can increase the thermal resistance of the material to improve the tensile strength at high temperature and suppress the growth of the crystal in the ball neck portion, thereby preventing the loop from becoming high. In addition, the yield strength is increased to increase the toughness. When the toughness is increased, breakage at the ball neck portion after the ball bonding is reduced, and in particular, even when a thin wire is applied, the neck cutting can be suppressed. In addition, even when the wire is bent at the time of bonding, the elastic region is high, so that the original loop shape may be restored. If the added amount is less than 1 ppm, the effect is not more than 10 ppm, the additives are gathered to the grain boundary to show a weak property, and the work hardening of the wire is increased, causing chip cracks during bonding. Therefore, the range is limited to 1 to 10 ppm.

이하에서는 실시예와 관련하여 본 발명을 보다 구체적으로 설명한다.Hereinafter, the present invention will be described in more detail with reference to Examples.

[실시예]EXAMPLE

99.999% 이상의 고순도로 정제된 금에 아래의 표 1에 나타낸 바와 같이 합금 원소 및 첨가물을 넣어 용해한 후 원형 단조 및 인발 가공하여 직경 33㎛의 와이어로 제조한다. 이후 열처리 가공하여 적절한 기계적 특성을 얻은 후 재료의 기계적 성질인 파단 강도와 연신율을 측정하여 고온 및 상온에서의 강도를 측정하고, 본딩시 볼의 크기, 본딩 후 접착 강도, 와이어 쏠림(Sweeping) 등의 효과를 비교하여 아래의 표 2에 나타내었다.Into the gold refined to 99.999% or more high purity, as shown in Table 1 below, the alloying elements and additives are dissolved, and then round forged and drawn to prepare a wire having a diameter of 33 μm. After the heat treatment to obtain the appropriate mechanical properties after measuring the mechanical strength of the material fracture strength and elongation to measure the strength at high temperature and room temperature, and the size of the ball during bonding, adhesive strength after bonding, wire pulling (sweeping) The effect is shown in Table 2 below.

실시재 1~15는 본 발명 범위에 속하는 성분 조성을 갖는 반도체 소자의 본딩 와이어용 금합금으로 제조된 것이며, 종래재 1, 2는 Pd. Ba를 함유하지 않은 종래의 합금으로 제조된 것이며, 비교재 1은 Pd는 함유하나 Ba 은 함유하지 않는 금합금으로 제조된 경우의 예이다.Examples 1-15 are manufactured from the gold alloy for the bonding wire of the semiconductor element which has the component composition which belongs to the scope of the present invention, and Conventional materials 1 and 2 are Pd. It is made of a conventional alloy that does not contain Ba, and Comparative Material 1 is an example of a case made of a gold alloy containing Pd but not Ba.

상기 표 1 및 표 2로부터 알 수 있는 바와 같이, 본 발명에 따른 실시재 1~15의 경우에는 상온 및 고온에서의 강도가 종래재나 비교재에 비해 현저하게 양호하고, 와이어 스위핑 비율도 상당히 저하되며, 볼 직경도 작게 제어되는 것으로 나타났다.As can be seen from Table 1 and Table 2, in the case of Examples 1 to 15 according to the present invention, the strength at room temperature and high temperature is remarkably good compared to the conventional materials or the comparative materials, and the wire sweeping ratio is also considerably lowered. The ball diameter was also controlled to be small.

따라서, 상기 설명한 본 발명의 반도체 소자의 본딩 와이어용 금합금에 의해 제조된 와이어에 의하면, 본딩 후 상온 및 고온강도가 양호하고 본딩시 볼 사이즈를 작게 제어할 수 있으며, 와이어의 쇼트 현상을 방지할 수 있는 등의 효과가 얻어지는 등 유용한 발명인 것이다.Therefore, according to the wire manufactured by the gold alloy for the bonding wire of the semiconductor device of the present invention described above, the room temperature and high temperature strength after bonding is good, the ball size during the bonding can be controlled small, and the short phenomenon of the wire can be prevented. It is a useful invention, such as the effect obtained.

Claims (1)

중량%로, Pd:0.5~5.0%, Ba:5~50 ppm, Be와 Ca 중의 어느 하나 이상을 각각 1~10 ppm, 나머지 Au로 이루어진 것을 특징으로 하는 반도체 소자의 본딩 와이어용 금합금.A gold alloy for a bonding wire of a semiconductor device, comprising, by weight%, Pd: 0.5 to 5.0%, Ba: 5 to 50 ppm, at least one of Be and Ca, respectively, 1 to 10 ppm and the remaining Au.
KR1019960077607A 1996-12-30 1996-12-30 Gold alloy for bonding wire of semiconductor device KR100231933B1 (en)

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