KR0137309B1 - Projection exposure apparatus and method for manufacturing a devcie using the same - Google Patents

Projection exposure apparatus and method for manufacturing a devcie using the same

Info

Publication number
KR0137309B1
KR0137309B1 KRG03B2A KR19950001505A KR0137309B1 KR 0137309 B1 KR0137309 B1 KR 0137309B1 KR G03B2 A KRG03B2 A KR G03B2A KR 19950001505 A KR19950001505 A KR 19950001505A KR 0137309 B1 KR0137309 B1 KR 0137309B1
Authority
KR
South Korea
Prior art keywords
devcie
manufacturing
same
exposure apparatus
projection exposure
Prior art date
Application number
KRG03B2A
Other languages
English (en)
Other versions
KR950024025A (ko
Inventor
Kazuhiro Takahashi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of KR950024025A publication Critical patent/KR950024025A/ko
Application granted granted Critical
Publication of KR0137309B1 publication Critical patent/KR0137309B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
KRG03B2A 1994-01-27 1995-01-27 Projection exposure apparatus and method for manufacturing a devcie using the same KR0137309B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6007615A JPH07220988A (ja) 1994-01-27 1994-01-27 投影露光方法及び装置及びこれを用いたデバイス製造方法
JP94-007615 1994-01-27

Publications (2)

Publication Number Publication Date
KR950024025A KR950024025A (ko) 1995-08-21
KR0137309B1 true KR0137309B1 (en) 1998-04-24

Family

ID=11670725

Family Applications (1)

Application Number Title Priority Date Filing Date
KRG03B2A KR0137309B1 (en) 1994-01-27 1995-01-27 Projection exposure apparatus and method for manufacturing a devcie using the same

Country Status (3)

Country Link
US (1) US5831715A (ko)
JP (1) JPH07220988A (ko)
KR (1) KR0137309B1 (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010046088A1 (en) * 1994-02-14 2001-11-29 Naoto Sano Exposure apparatus and device manufacturing method using the same
JP3278407B2 (ja) 1998-02-12 2002-04-30 キヤノン株式会社 投影露光装置及びデバイス製造方法
JPH11243050A (ja) * 1998-02-24 1999-09-07 Canon Inc 露光装置
US6256086B1 (en) * 1998-10-06 2001-07-03 Canon Kabushiki Kaisha Projection exposure apparatus, and device manufacturing method
JP4521896B2 (ja) 1999-06-08 2010-08-11 キヤノン株式会社 照明装置、投影露光装置及びデバイス製造方法
JP3631094B2 (ja) * 2000-03-30 2005-03-23 キヤノン株式会社 投影露光装置及びデバイス製造方法
JP3619142B2 (ja) * 2000-11-10 2005-02-09 キヤノン株式会社 投影露光装置及びデバイス製造方法
JP3605041B2 (ja) 2001-01-26 2004-12-22 キヤノン株式会社 露光方法及び装置、デバイス製造方法、並びに、デバイス
JP2004086128A (ja) * 2002-07-04 2004-03-18 Nikon Corp 投影光学系、露光装置、およびデバイス製造方法
US20050048412A1 (en) * 2003-08-28 2005-03-03 Pary Baluswamy Methods for reducing spherical aberration effects in photolithography
US7382438B2 (en) * 2005-08-23 2008-06-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100645902B1 (ko) 2006-01-02 2006-11-23 조준석 장력조절장치
JP2007231324A (ja) * 2006-02-28 2007-09-13 Canon Inc マルチ荷電ビーム加工装置
DE102008043324B4 (de) * 2008-10-30 2010-11-11 Carl Zeiss Smt Ag Optische Anordnung zur dreidimensionalen Strukturierung einer Materialschicht
NL2004803A (en) * 2009-06-11 2010-12-15 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
US9298102B2 (en) * 2013-03-13 2016-03-29 Carl Zeiss Smt Gmbh Projection lens with wavefront manipulator
US9651872B2 (en) 2013-03-13 2017-05-16 Carl Zeiss Smt Gmbh Projection lens with wavefront manipulator
JP6563131B2 (ja) 2015-12-09 2019-08-21 クオリティー ヴィジョン インターナショナル インコーポレイテッドＱｕａｌｉｔｙ Ｖｉｓｉｏｎ Ｉｎｔｅｒｎａｔｉｏｎａｌ， Ｉｎｃ． テレセントリック光学測定機のためのフォーカシングシステム
JP6674250B2 (ja) * 2015-12-16 2020-04-01 キヤノン株式会社 露光装置、露光方法、および物品の製造方法
JPWO2019031328A1 (ja) * 2017-08-07 2020-08-06 パイオニア株式会社 光学装置
WO2019079010A1 (en) 2017-10-19 2019-04-25 Cymer, Llc FORMATION OF MULTIPLE AERIAL IMAGES IN ONE LITHOGRAPHIC EXPOSURE PASSAGE

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141226A (ja) * 1983-02-02 1984-08-13 Canon Inc 観察装置
JPS60214335A (ja) * 1984-04-11 1985-10-26 Canon Inc 投影露光装置及び投影露光方法
US4688932A (en) * 1985-02-12 1987-08-25 Canon Kabushiki Kaisha Exposure apparatus
JPH0614508B2 (ja) * 1985-03-06 1994-02-23 キヤノン株式会社 ステップアンドリピート露光方法
JPH0722105B2 (ja) * 1985-11-08 1995-03-08 株式会社ニコン 投影露光装置
US4888614A (en) * 1986-05-30 1989-12-19 Canon Kabushiki Kaisha Observation system for a projection exposure apparatus
JPH0821531B2 (ja) * 1986-08-29 1996-03-04 株式会社ニコン 投影光学装置
JPS63185023A (ja) * 1987-01-28 1988-07-30 Canon Inc 露光装置
EP0289278B1 (en) * 1987-04-28 1994-08-17 Canon Kabushiki Kaisha A multi-electron-beam pattern drawing apparatus
JP2599591B2 (ja) * 1987-04-28 1997-04-09 キヤノン株式会社 電子放出素子特性測定装置
US4875076A (en) * 1987-06-15 1989-10-17 Canon Kabushiki Kaisha Exposure apparatus
JPS6461716A (en) * 1987-08-31 1989-03-08 Canon Kk Illuminator
JPH01106426A (ja) * 1987-10-19 1989-04-24 Canon Inc 露光装置
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
US5117254A (en) * 1988-05-13 1992-05-26 Canon Kabushiki Kaisha Projection exposure apparatus
JP2679195B2 (ja) * 1988-12-21 1997-11-19 株式会社ニコン 投影露光装置
US5311362A (en) * 1989-04-20 1994-05-10 Nikon Corporation Projection exposure apparatus
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
US5424552A (en) * 1991-07-09 1995-06-13 Nikon Corporation Projection exposing apparatus
JP2924344B2 (ja) * 1991-08-09 1999-07-26 キヤノン株式会社 投影露光装置
JP3291849B2 (ja) * 1993-07-15 2002-06-17 株式会社ニコン 露光方法、デバイス形成方法、及び露光装置

Also Published As

Publication number Publication date
KR950024025A (ko) 1995-08-21
JPH07220988A (ja) 1995-08-18
US5831715A (en) 1998-11-03

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