JPWO2023067736A1 - - Google Patents

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Publication number
JPWO2023067736A1
JPWO2023067736A1 JP2022513335A JP2022513335A JPWO2023067736A1 JP WO2023067736 A1 JPWO2023067736 A1 JP WO2023067736A1 JP 2022513335 A JP2022513335 A JP 2022513335A JP 2022513335 A JP2022513335 A JP 2022513335A JP WO2023067736 A1 JPWO2023067736 A1 JP WO2023067736A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022513335A
Other versions
JPWO2023067736A5 (ja
JP7339434B1 (ja
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Publication of JPWO2023067736A1 publication Critical patent/JPWO2023067736A1/ja
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Publication of JP7339434B1 publication Critical patent/JP7339434B1/ja
Publication of JPWO2023067736A5 publication Critical patent/JPWO2023067736A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022513335A 2021-10-20 2021-10-20 ＳｉＣ単結晶基板及びその製造方法 Active JP7339434B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/038798 WO2023067736A1 (ja) 2021-10-20 2021-10-20 ＳｉＣ単結晶基板及びその製造方法

Publications (3)

Publication Number Publication Date
JPWO2023067736A1 true JPWO2023067736A1 (ja) 2023-04-27
JP7339434B1 JP7339434B1 (ja) 2023-09-05
JPWO2023067736A5 JPWO2023067736A5 (ja) 2023-09-20

Family

ID=86058059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022513335A Active JP7339434B1 (ja) 2021-10-20 2021-10-20 ＳｉＣ単結晶基板及びその製造方法

Country Status (4)

Country Link
US (1) US20240141544A1 (ja)
JP (1) JP7339434B1 (ja)
CN (1) CN117425752A (ja)
WO (1) WO2023067736A1 (ja)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4069508B2 (ja) 1998-07-21 2008-04-02 株式会社デンソー 炭化珪素単結晶の製造方法
JP3248071B2 (ja) 1998-10-08 2002-01-21 日本ピラー工業株式会社 単結晶ＳｉＣ
JP2010280546A (ja) * 2009-06-05 2010-12-16 Bridgestone Corp 炭化珪素単結晶の製造方法
WO2020184059A1 (ja) * 2019-03-11 2020-09-17 日本碍子株式会社 ＳｉＣ複合基板及び半導体デバイス
EP4036281A4 (en) * 2019-09-27 2023-08-02 Kwansei Gakuin Educational Foundation SIC MONOCRYSTAL MANUFACTURING METHOD, SIC MONOCRYSTAL MANUFACTURING DEVICE, AND SIC MONOCRYSTAL SLICE
WO2021100564A1 (ja) * 2019-11-20 2021-05-27 日本碍子株式会社 ＳｉＣ基板及びその製法

Also Published As

Publication number Publication date
CN117425752A (zh) 2024-01-19
WO2023067736A1 (ja) 2023-04-27
US20240141544A1 (en) 2024-05-02
JP7339434B1 (ja) 2023-09-05

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