JPWO2021210431A1 - - Google Patents

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Publication number
JPWO2021210431A1
JPWO2021210431A1 JP2022515310A JP2022515310A JPWO2021210431A1 JP WO2021210431 A1 JPWO2021210431 A1 JP WO2021210431A1 JP 2022515310 A JP2022515310 A JP 2022515310A JP 2022515310 A JP2022515310 A JP 2022515310A JP WO2021210431 A1 JPWO2021210431 A1 JP WO2021210431A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022515310A
Other versions
JP7361892B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021210431A1 publication Critical patent/JPWO2021210431A1/ja
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Publication of JP7361892B2 publication Critical patent/JP7361892B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Weting (AREA)
JP2022515310A 2020-04-13 2021-04-02 基板処理システムおよび基板処理方法 Active JP7361892B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020071619 2020-04-13
JP2020071619 2020-04-13
PCT/JP2021/014349 WO2021210431A1 (ja) 2020-04-13 2021-04-02 基板処理システムおよび基板処理方法

Publications (2)

Publication Number Publication Date
JPWO2021210431A1 true JPWO2021210431A1 (ja) 2021-10-21
JP7361892B2 JP7361892B2 (ja) 2023-10-16

Family

ID=78085045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022515310A Active JP7361892B2 (ja) 2020-04-13 2021-04-02 基板処理システムおよび基板処理方法

Country Status (3)

Country Link
JP (1) JP7361892B2 (ja)
TW (1) TW202205484A (ja)
WO (1) WO2021210431A1 (ja)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220004A (ja) * 1997-11-26 1999-08-10 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000021851A (ja) * 1998-06-29 2000-01-21 Nec Corp イオンミリング装置およびイオンミリングの終点検出方法
JP2000243678A (ja) * 1998-12-24 2000-09-08 Toshiba Corp モニタリング装置とその方法
JP2009049382A (ja) * 2007-07-26 2009-03-05 Panasonic Corp ドライエッチング方法およびドライエッチング装置
JP2009252945A (ja) * 2008-04-04 2009-10-29 Hitachi High-Technologies Corp エッチング処理状態の判定方法、システム
JP2011023629A (ja) * 2009-07-17 2011-02-03 Canon Anelva Corp ドライエッチング方法、電子デバイスの製造方法、ドライエッチング装置、処理制御プログラム及び記録媒体
JP2015215193A (ja) * 2014-05-08 2015-12-03 東京エレクトロン株式会社 膜厚測定装置、膜厚測定方法、プログラム及びコンピュータ記憶媒体

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220004A (ja) * 1997-11-26 1999-08-10 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000021851A (ja) * 1998-06-29 2000-01-21 Nec Corp イオンミリング装置およびイオンミリングの終点検出方法
JP2000243678A (ja) * 1998-12-24 2000-09-08 Toshiba Corp モニタリング装置とその方法
JP2009049382A (ja) * 2007-07-26 2009-03-05 Panasonic Corp ドライエッチング方法およびドライエッチング装置
JP2009252945A (ja) * 2008-04-04 2009-10-29 Hitachi High-Technologies Corp エッチング処理状態の判定方法、システム
JP2011023629A (ja) * 2009-07-17 2011-02-03 Canon Anelva Corp ドライエッチング方法、電子デバイスの製造方法、ドライエッチング装置、処理制御プログラム及び記録媒体
JP2015215193A (ja) * 2014-05-08 2015-12-03 東京エレクトロン株式会社 膜厚測定装置、膜厚測定方法、プログラム及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
TW202205484A (zh) 2022-02-01
JP7361892B2 (ja) 2023-10-16
WO2021210431A1 (ja) 2021-10-21

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