JPWO2020075009A1 - センサ装置および半導体装置 - Google Patents
センサ装置および半導体装置 Download PDFInfo
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- A61B5/1455—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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Abstract
Description
図2は、半導体装置を説明するブロック図である。
図3Aは、画素アレイを説明する回路図である。図3B1および図3B2は、画素を説明する回路図である。
図4Aは画素アレイを説明する回路図である。図4Bは、画素を説明する回路図である。図4C1および図4C2は、回路46、および回路46aを説明する回路図である。
図5は、センサ装置を説明する図である。
図6は、センサ装置を説明する図である。
図7は、センサ装置を説明する図である。
図8Aおよび図8Bは、センサ装置を説明する図である。
図9A乃至図9Cは、センサ装置の一例を示す断面図である。
図10A乃至図10Cは、センサ装置の一例を示す断面図である。
図11A乃至図11Cは、センサ装置の一例を示す断面図である。
図12Aおよび図12Bは、センサ装置の一例を示す断面図である。
図13Aおよび図13Bは、センサ装置の一例を示す断面図である。
図14Aおよび図14Bは、センサ装置の一例を示す断面図である。
図15は、センサ装置の一例を示す断面図である。
図16A乃至図16Dは、電子機器を説明する図である。
図17A乃至図17Cは、電子機器を説明する図である。
本実施の形態では、本発明の一態様である半導体装置について説明する。
OSトランジスタに用いる半導体材料としては、エネルギーギャップが2eV以上、好ましくは2.5eV以上、より好ましくは3eV以上である金属酸化物を用いることができる。代表的には、インジウムを含む酸化物半導体などであり、例えば、後述するCAAC−OSまたはCAC−OSなどを用いることができる。CAAC−OSは結晶を構成する原子が安定であり、信頼性を重視するトランジスタなどに適する。また、CAC−OSは、高移動度特性を示すため、高速駆動を行うトランジスタなどに適する。
発光領域31aは、回路32と電気的に接続されている。回路42は、配線SEaを介してセンサ領域41a、およびセンサ領域41bが有する画素45と電気的に接続されている。回路32は、配線G1aおよび配線G2aを介して発光領域31aが有する画素35と電気的に接続されている。
発光素子56には有機発光素子を用いることができる。当該有機発光素子としては赤外光を発する素子を用いることができる。特に波長700nm以上9000nm以下にピークを有する赤外光を発する有機発光素子であることが好ましい。
本実施の形態では、本発明の一態様のセンサ装置について図8乃至図15を用いて説明する。
本実施の形態のセンサ装置は、可撓性を有する基板上に、センサ素子と発光素子とを有する。具体的には、発光領域に、発光素子がマトリクス状に配置されており、当該発光領域が光源として機能する。また、当該センサ領域には、センサ素子がマトリクス状に配置されており、センサ領域は、受光部として機能する。受光部は、検査用センサ、イメージセンサ、タッチセンサに用いることができる。つまり、受光部で光を検出することで、発光素子の光を受けた対象物からの反射光を検出することや、対象物(指やペンなど)の近接もしくは接触を検出することができる。
図9Aにセンサ装置300Aの断面図を示す。
図9Bにセンサ装置300Bの断面図を示す。なお、以降のセンサ装置の説明において、先に説明したセンサ装置と同様の構成については、説明を省略することがある。
図9Cにセンサ装置300Cの断面図を示す。
図11Aにセンサ装置300Kの断面図を示し、図11Bにセンサ装置300Lの断面図を示し、図11Cにセンサ装置300Mの断面図を示す。
図12Aに、センサ装置100Aの断面図を示す。
図13Aに、センサ装置100Bの断面図を示す。
図14Aに、センサ装置100Cの断面図を示す。
図15に、センサ装置100Dの断面図を示す。
本実施の形態では、本発明の一態様に係るセンサ装置を用いることができる電子機器の一例を説明する。
Claims (8)
- センサ装置、プロセッサ、および通信装置を有する半導体装置であって、
前記センサ装置は、基板上に形成される第1の画素と第2の画素とを有し、
前記第1の画素は、発光素子と第1のトランジスタを有し、
前記第2の画素は、光電変換機能を有するセンサ素子と第2のトランジスタを有し、
前記発光素子が射出する光は、ピーク波長を有し、
前記センサ素子が検出する波長範囲は、前記ピーク波長を含み、
前記第1のトランジスタおよび前記第2のトランジスタの半導体層は、同じ元素を含み、
前記発光素子が有する画素電極は、前記第1のトランジスタと電気的に接続する機能と、前記センサ素子に対する拡散光を遮光する機能を備え、
前記センサ素子で検出される光は、前記プロセッサによって演算され、
前記通信装置は、前記演算された結果を送信する半導体装置。 - 基板上に形成される第1の画素と、第2の画素とを有するセンサ装置であって、
前記第1の画素は、発光素子と第1のトランジスタを有し、
前記第2の画素は、光電変換機能を有するセンサ素子と第2のトランジスタを有し、
前記発光素子が射出する光は、ピーク波長を有し、
前記センサ素子が検出する波長範囲は、前記ピーク波長を含み、
前記第1のトランジスタおよび前記第2のトランジスタの半導体層は、同じ元素を含み、
前記発光素子が有する画素電極は、前記第1のトランジスタと電気的に接続する機能と、前記センサ素子に対する拡散光を遮光する機能を備えるセンサ装置。 - 請求項2において、
前記基板は、可撓性を有するセンサ装置。 - 請求項2において、
前記ピーク波長は、700nm以上9000nm以下であるセンサ装置。 - 請求項2において、
前記発光素子は、第1の有機化合物と、共有層とを有し、
前記センサ素子は、第2の有機化合物と、前記共有層とを有するセンサ装置。 - 請求項2において、
第1の画素と、第2の画素の間には、導電層を含まない領域を有するセンサ装置。 - 請求項2において、
前記第1のトランジスタおよび前記第2のトランジスタが半導体層に金属酸化物を有するセンサ装置。 - 請求項7において、
前記第1のトランジスタまたは前記第2のトランジスタがバックゲートを有するセンサ装置。
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2011096668A (ja) * | 2002-04-24 | 2011-05-12 | Semiconductor Energy Lab Co Ltd | 発光装置及び光源装置 |
JP2013073965A (ja) * | 2011-09-26 | 2013-04-22 | Toshiba Corp | 光電変換装置及びその製造方法 |
JP2016115862A (ja) * | 2014-12-17 | 2016-06-23 | セイコーエプソン株式会社 | 画像取得装置、生体情報取得装置、電子機器 |
JP2017192124A (ja) * | 2016-02-10 | 2017-10-19 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、および電子機器 |
US20180129852A1 (en) * | 2017-04-27 | 2018-05-10 | Shanghai Tianma Micro-electronics Co., Ltd. | Display Panel And Electronic Device |
JP2018106069A (ja) * | 2016-12-27 | 2018-07-05 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
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US10386406B1 (en) * | 2018-02-02 | 2019-08-20 | Globalfoundries Inc. | Back gate tuning circuits |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011096668A (ja) * | 2002-04-24 | 2011-05-12 | Semiconductor Energy Lab Co Ltd | 発光装置及び光源装置 |
JP2013073965A (ja) * | 2011-09-26 | 2013-04-22 | Toshiba Corp | 光電変換装置及びその製造方法 |
JP2016115862A (ja) * | 2014-12-17 | 2016-06-23 | セイコーエプソン株式会社 | 画像取得装置、生体情報取得装置、電子機器 |
JP2017192124A (ja) * | 2016-02-10 | 2017-10-19 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、および電子機器 |
JP2018106069A (ja) * | 2016-12-27 | 2018-07-05 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
US20180129852A1 (en) * | 2017-04-27 | 2018-05-10 | Shanghai Tianma Micro-electronics Co., Ltd. | Display Panel And Electronic Device |
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