JPWO2019187337A1 - 酸化膜形成方法 - Google Patents
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Abstract
Description
酸化膜が形成される被成膜基体に対して、
オゾンガスと、不飽和炭化水素ガスと、前記酸化膜を構成する元素であるSiまたは金属元素を構成元素として含む原料ガスと、を供給し、化学気相成長法により、前記被成膜基体表面に酸化膜を形成する。
前記被成膜基体は、合成樹脂製の基板またはフィルムであり、
前記被成膜基体に対して、前記オゾンガスと前記不飽和炭化水素ガスを供給した後、
前記被成膜基体に対して、前記オゾンガス、前記不飽和炭化水素ガスおよび前記原料ガスを供給して前記被成膜基体表面に前記酸化膜を形成する。
前記被成膜基体に対して、前記オゾンガス、前記不飽和炭化水素ガスおよび前記原料ガスを供給して、前記被成膜基体表面に前記酸化膜を形成した後、
前記被成膜基体に対して、前記オゾンガスと前記不飽和炭化水素ガスを供給する。
前記不飽和炭化水素ガスは、エチレンガスである。
前記被成膜基体上に前記酸化膜を形成する工程において、前記オゾンガスの供給流量は、前記不飽和炭化水素ガスと前記原料ガスの合計供給流量の2倍以上である。
前記被成膜基体上に前記酸化膜を形成する工程において、前記オゾンガス、前記不飽和炭化水素ガス、前記原料ガス、および前記被成膜基体上に供給されたガスの攪拌を行う不活性ガスのうち少なくとも1つのガス流量を周期的に変化させる。
前記オゾンガスと前記不飽和炭化水素ガスの供給流量を一定とし、前記原料ガスを周期的に変化させる。
前記被成膜基体から離れた位置に、前記被成膜基体表面と向かい合って、シャワーヘッドを備え、
予め、前記不飽和炭化水素ガスと前記原料ガスを混合し、この混合したガスと前記オゾンガスを前記シャワーヘッドの異なる供給孔からそれぞれ前記被成膜基体に供給する。
前記被成膜基体から離れた位置に、前記被成膜基体表面と向かい合って、シャワーヘッドを備え、
予め、前記オゾンガスと前記原料ガスを混合し、この混合したガスと前記不飽和炭化水素ガスを前記シャワーヘッドの異なる供給孔からそれぞれ前記被成膜基体に供給する。
前記被成膜基体上に前記酸化膜を形成する工程において、前記オゾンガスの供給流量は、0.2sccm以上である。
処理炉5内に窒素ガスを送り込み、処理炉5内に滞留するガスを窒素ガスに置き換え、処理炉5内のガスを除去する(窒素パージ)。次に、被成膜基体7を処理炉5内に搬入し、バルブV4を開き、真空ポンプ9を用いて処理炉5内の圧力を1Pa以下に下げる。バルブV4は、開放状態を継続し、被成膜基体7の温度が所定の温度となるように試料台11を加熱する。
バルブV1、V2を開放し、オゾンガスとエチレンガスを供給する。この処理により、酸化活性種(OH)が被成膜基体7表面に供給・吸着される。その結果、被成膜基体7表面が親水性となり、後に成膜されるSiO2と被成膜基体7表面との密着性が向上する。オゾンガスの流量は、例えば、0.2〜1000sccmの範囲内で設定し、エチレンガスの流量は、例えば、0.1〜500sccmの範囲内で設定する。オゾンの爆発を防ぐため、例えば、プロセス圧力は1000Pa以下とし、次ステップまで、オゾンガスとエチレンガスの供給を継続する。オゾンガスの流量は、エチレンガスの流量の2倍以上であることが好ましい。
バルブV3を開放し、TEOSガスを供給する。TEOSガスの流量は、例えば、0.1〜500sccmの範囲で設定する。オゾンガスの流量は、例えば、エチレンガスの流量とTEOSガスの流量の合計流量の2倍以上であることが好ましい。プロセス圧力は、例えば、1000Pa以下とする。
プロセス中、オゾンガスの流量、エチレンガスの流量およびTEOSガスの流量を一定にする。
プロセス中、オゾンガスの流量およびエチレンガスの流量を一定にし、TEOSガスの流量を周期的に変化させる。
プロセス中、オゾンガスの流量、TEOSガスの流量を一定にし、エチレンガスの流量を周期的に変化させる。
バルブV3を閉じて、TEOSガスの供給を止める。TEOSガスの供給を止めることで、成膜が止まるが、STEP2と同様に、被成膜基体7上に成膜された酸化膜表面にOHが供給される。供給されたOHが膜中を拡散することで、膜中不純物であるカーボン(C)や水素(H)と化学反応し、これら膜中不純物がガス化(CO、CO2またはH2O)されて膜外に除去される。ステップ4におけるオゾンガスの流量およびエチレンガスの流量や処理炉5内の圧力範囲は、ステップ2と同様である。被成膜基体7上に成膜された酸化膜の改質時間は、膜厚が厚くなるにしたがって増加するので、改質時間は、被成膜基体7に形成された酸化膜の膜厚に応じて適宜設定される。
バルブV1、V2を閉じて、すべてのガス供給を停止する。処理炉5内の圧力を1Pa以下にし、バルブV4を閉じて排気を止める。そして、処理炉5内に窒素ガス等の不活性ガスを満たして、処理炉5内の圧力を大気圧にし、被成膜基体7を処理炉5外に搬送する。これにより、一連の処理プロセスが終了する。
Claims (10)
- 酸化膜が形成される被成膜基体に対して、
オゾンガスと、不飽和炭化水素ガスと、前記酸化膜を構成する元素であるSiまたは金属元素を構成元素として含む原料ガスと、を供給し、化学気相成長法により、前記被成膜基体表面に酸化膜を形成する、酸化膜形成方法。 - 前記被成膜基体は、合成樹脂製の基板またはフィルムであり、
前記被成膜基体に対して、前記オゾンガスと前記不飽和炭化水素ガスを供給した後、
前記被成膜基体に対して、前記オゾンガス、前記不飽和炭化水素ガスおよび前記原料ガスを供給して前記被成膜基体表面に前記酸化膜を形成する、請求項1に記載の酸化膜形成方法。 - 前記被成膜基体に対して、前記オゾンガス、前記不飽和炭化水素ガスおよび前記原料ガスを供給して、前記被成膜基体表面に前記酸化膜を形成した後、
前記被成膜基体に対して、前記オゾンガスと前記不飽和炭化水素ガスを供給する、請求項1または請求項2に記載の酸化膜形成方法。 - 前記不飽和炭化水素ガスは、エチレンガスである、請求項1から請求項3のいずれか1項に記載の酸化膜形成方法。
- 前記被成膜基体上に前記酸化膜を形成する工程において、前記オゾンガスの供給流量は、前記不飽和炭化水素ガスと前記原料ガスの合計供給流量の2倍以上である、請求項1から請求項4のいずれか1項に記載の酸化膜形成方法。
- 前記被成膜基体上に前記酸化膜を形成する工程において、前記オゾンガス、前記不飽和炭化水素ガス、前記原料ガス、および前記被成膜基体上に供給されたガスの攪拌を行う不活性ガスのうち少なくとも1つのガス流量を周期的に変化させる、請求項1から請求項5のいずれか1項に記載の酸化膜形成方法。
- 前記オゾンガスと前記不飽和炭化水素ガスの供給流量を一定とし、前記原料ガスを周期的に変化させる、請求項6に記載の酸化膜形成方法。
- 前記被成膜基体から離れた位置に、前記被成膜基体表面と向かい合って、シャワーヘッドを備え、
予め、前記不飽和炭化水素ガスと前記原料ガスを混合し、この混合したガスと前記オゾンガスを前記シャワーヘッドの異なる供給孔からそれぞれ前記被成膜基体に供給する、請求項1に記載の酸化膜形成方法。 - 前記被成膜基体から離れた位置に、前記被成膜基体表面と向かい合って、シャワーヘッドを備え、
予め、前記オゾンガスと前記原料ガスを混合し、この混合したガスと前記不飽和炭化水素ガスを前記シャワーヘッドの異なる供給孔からそれぞれ前記被成膜基体に供給する、請求項1に記載の酸化膜形成方法。 - 前記被成膜基体上に前記酸化膜を形成する工程において、前記オゾンガスの供給流量は、0.2sccm以上である、請求項1に記載の酸化膜形成方法。
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