JPWO2018146780A1 - 半導体装置及び電力変換装置 - Google Patents
半導体装置及び電力変換装置 Download PDFInfo
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体装置を示す上面図である。図2は、図1のI−IIに沿った断面図である。本実施の形態の半導体装置は、例えば家電用、産業用、自動車用、電車用などに広く用いられる半導体パワーモジュールである。
図7は、本発明の実施の形態2に係るリードフレームの端部を示す断面図である。本実施の形態は、実施の形態1と比較してリードフレーム8の端部の構造が異なっており、その他の構成は実施の形態1と同様である。リードフレーム8の端部の上面にリードフレーム8の厚みが薄くなる段差14が設けられた上面薄型構造になっている。段差14の上部に応力緩和樹脂13が塗布される。
図11は、本発明の実施の形態3に係る半導体装置を示す断面図である。半導体チップ6の上面には温度センス又はゲートなどの配線が設けられているため、エミッタ電極が互いに離間した上面電極16,17に分断される。はんだ等の接合材9を用いて上面電極16,17にリードフレーム8が接合される。上面電極16,17の接合材9間に、リードフレーム8と接合されていないトンネルR4が存在する。
本実施の形態は、上述した実施の形態1〜3にかかる半導体装置を電力変換装置に適用したものである。電力変換装置は、例えば、インバータ装置、コンバータ装置、サーボアンプ、電源ユニットなどである。本発明は特定の電力変換装置に限定されるものではないが、以下、三相のインバータに適用した場合について説明する。
Claims (12)
- 絶縁基板と、
前記絶縁基板の上に設けられた半導体チップと、
前記半導体チップの上面に接合されたリードフレームと、
前記半導体チップ、前記絶縁基板及び前記リードフレームを覆う封止樹脂と、
前記リードフレームの端部に部分的に塗布され、前記封止樹脂よりも低い弾性率を持つ応力緩和樹脂とを備えることを特徴とする半導体装置。 - 前記リードフレームの上面は前記応力緩和樹脂に覆われていない露出部を有し、
前記露出部が前記応力緩和樹脂により囲まれてダム構造が構成されていることを特徴とする請求項1に記載の半導体装置。 - 前記半導体チップ、前記絶縁基板及び前記リードフレームを取り囲むケースを更に備え、
前記ダム構造において、前記露出部は、前記応力緩和樹脂のみにより囲まれているか、前記応力緩和樹脂と前記リードフレームの折り曲げ部により囲まれているか、又は、前記応力緩和樹脂と前記ケースの内壁により囲まれていることを特徴とする請求項2に記載の半導体装置。 - 前記リードフレームの前記端部の上面に前記リードフレームの厚みが薄くなる段差が設けられ、前記段差の上部に前記応力緩和樹脂が塗布されていることを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
- 前記リードフレームの前記端部の上面と下面に前記リードフレームの厚みが薄くなる段差が設けられ、前記段差の上部と下部に前記応力緩和樹脂が塗布されていることを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
- 前記応力緩和樹脂は、前記リードフレームの上面において、互いに平行な複数の線状に塗布されていることを特徴とする請求項1〜5の何れか1項に記載の半導体装置。
- 前記半導体チップは、前記半導体チップの前記上面に互いに離間して設けられて前記リードフレームに接合された第1及び第2の上面電極を有し、
前記リードフレームは、前記半導体チップの前記上面に対して垂直な平面視において前記第1の上面電極と前記第2の上面電極との間に切り込みを有することを特徴とする請求項1〜6の何れか1項に記載の半導体装置。 - 前記応力緩和樹脂は前記リードフレームの端部において上面だけでなく、側面も覆うことを特徴とする請求項1〜7の何れか1項に記載の半導体装置。
- 前記応力緩和樹脂の上面は前記リードフレームの上面に対して5μmから5mm高いことを特徴とする請求項1〜8の何れか1項に記載の半導体装置。
- 前記応力緩和樹脂の弾性率が2GPaから8GPaであることを特徴とする請求項1〜9の何れか1項に記載の半導体装置。
- 前記半導体チップはワイドバンドギャップ半導体により形成されていることを特徴とする請求項1〜10の何れか1項に記載の半導体装置。
- 請求項1〜11の何れか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路とを備えることを特徴とする電力変換装置。
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