JPWO2018051659A1 - 太陽電池モジュールおよび太陽電池セル - Google Patents
太陽電池モジュールおよび太陽電池セル Download PDFInfo
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- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (5)
- 保護基板と、
前記保護基板に対向する裏面保護材と、
前記保護基板と前記裏面保護材との間に封止される太陽電池セルとを備え、
前記太陽電池セルは、
前記保護基板側を向く受光面と、前記裏面保護材側を向く裏面とを有し、前記受光面から前記裏面に至る溝によって複数のサブセルに分割される光電変換層と、
前記光電変換層の裏面側に配置される電極層と、
前記光電変換層の受光面側において、隣接する2つのサブセルの間に配置され、前記隣接する2つのサブセルの間の溝を介して前記電極層に対向する光反射部材と、
を備えることを特徴とする太陽電池モジュール。 - 前記電極層は、隣接する2つのサブセルにまたがって配置されるサブ電極を含み、
前記サブ電極は、前記隣接する2つのサブセルのうち、一方のサブセルにおけるn型領域に接続されるn側部と、他方のサブセルにおけるp型領域に接続されるp側部と、前記n側部と前記p側部との間に設けられる接続部とを含み、
前記光反射部材は、前記隣接する2つのサブセルの間の方向において、前記接続部よりも短くされることを特徴とする請求項1に記載の太陽電池モジュール。 - 隣接する2つの太陽電池セルのそれぞれの電極層を接続する配線材と、
前記隣接する2つの太陽電池セルのそれぞれの受光面側において、前記隣接する2つの太陽電池セルの間に配置され、前記隣接する2つの太陽電池セルの間の隙間を介して前記配線材に対向するセル間光反射部材とをさらに備えることを特徴とする請求項1または2に記載の太陽電池モジュール。 - 前記隣接する2つのサブセルの間の方向において、前記光反射部材は、前記セル間光反射部材よりも短くされることを特徴とする請求項3に記載の太陽電池モジュール。
- 受光面と裏面とを有し、前記受光面から前記裏面に至る溝によって複数のサブセルに分割される光電変換層と、
前記光電変換層の裏面側に配置される電極層と、
前記光電変換層の受光面側において、隣接する2つのサブセルの間に配置され、前記隣接する2つのサブセルの間の溝を介して前記電極層に対向する光反射部材と、
を備えることを特徴とする太陽電池セル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2016178914 | 2016-09-13 | ||
JP2016178914 | 2016-09-13 | ||
PCT/JP2017/027755 WO2018051659A1 (ja) | 2016-09-13 | 2017-07-31 | 太陽電池モジュールおよび太陽電池セル |
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JPWO2018051659A1 true JPWO2018051659A1 (ja) | 2019-03-28 |
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JP2018539559A Pending JPWO2018051659A1 (ja) | 2016-09-13 | 2017-07-31 | 太陽電池モジュールおよび太陽電池セル |
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WO (1) | WO2018051659A1 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5152858B2 (ja) * | 2008-08-22 | 2013-02-27 | シャープ株式会社 | 太陽電池モジュールおよびその製造方法 |
KR20140098305A (ko) * | 2013-01-30 | 2014-08-08 | 엘지전자 주식회사 | 태양 전지 모듈 |
WO2015045242A1 (ja) * | 2013-09-25 | 2015-04-02 | パナソニックIpマネジメント株式会社 | 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 |
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- 2017-07-31 WO PCT/JP2017/027755 patent/WO2018051659A1/ja active Application Filing
- 2017-07-31 JP JP2018539559A patent/JPWO2018051659A1/ja active Pending
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