JPWO2017077805A1 - 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の製造方法 - Google Patents
半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の製造方法 Download PDFInfo
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Abstract
Description
図1は、本発明に係る半導体素子用エピタキシャル基板の一実施形態としてのエピタキシャル基板10を含んで構成される、本発明に係る半導体素子の一実施形態としてのHEMT素子20の断面構造を、模式的に示す図である。
(自立基板の作製)
まず、フラックス法による自立基板1の作製手順について説明する。
続いて、MOCVD法によるエピタキシャル基板10の作製について説明する。エピタキシャル基板10は、自立基板1をMOCVD炉のリアクタ内に設けられたサセプタ上に載置した状態で、下記の条件にてバッファ層2、チャネル層3、および障壁層4をこの順にて積層形成することで得られる。ただし、バッファ層2については、単一のGaNバッファ層、または、13族元素としてGaおよびAlを含む多層バッファ層あるいは組成傾斜バッファ層を形成する場合について例示する。なお、形成温度とはサセプタ加熱温度を意味する。
形成温度=1000℃〜1200℃;
リアクタ内圧力=15kPa〜105kPa;
キャリアガス=水素;
15族/13族ガス比=250〜10000;
Al原料ガス/13族原料ガス比=0(GaNバッファ層の場合);
Al原料ガス/13族原料ガス比=0〜1の範囲で厚み方向における位置に応じて(多層バッファ層または組成傾斜バッファ層の場合)。
形成温度=1000℃〜1150℃;
リアクタ内圧力=15kPa〜105kPa;
キャリアガス=水素;
15族/13族ガス比=1000〜10000。
形成温度=1000℃〜1200℃;
リアクタ内圧力=1kPa〜30kPa;
15族/13族ガス比=5000〜20000;
キャリアガス=水素;
Al原料ガス/13族原料ガス比=0.1〜0.4。
形成温度=700℃〜900℃;
リアクタ内圧力=1kPa〜30kPa;
15族/13族ガス比=2000〜20000;
キャリアガス=窒素;
In原料ガス/13族原料ガス比=0.1〜0.9。
エピタキシャル基板10を用いたHEMT素子20の作製は、公知の技術を適用することで実現可能である。
上述のような手順および条件にて作製したHEMT素子20においては、自立基板1とバッファ層2からなる領域を第1の領域と定義するとき、その第1の領域の一部に、Siが1×1017cm−3以上の濃度で含まれる第2の領域を有するものとなっている。Siは、HEMT素子20の製造プロセスにおいて、特に、自立基板1を作製し、当該自立基板1にバッファ層2を隣接形成するプロセスにおいて、意図的に含有させられるものではないことから、第2の領域における上述した濃度でのSiの含有は、当該プロセスの途中で外部から取り込まれたSiが、HEMT素子20の形成後、残留したものと推察される。より詳細には、係る第2の領域は自立基板1とバッファ層2との界面を含んでなる。ただし、自立基板1の内部には形成されない。
[フラックス法によるZnドープGaN単結晶基板の作製]
直径2インチ、厚さ0.43mmのc面サファイア基板の表面に、550℃にてGaN低温バッファ層を30nm成膜し、その後、厚さ3μmのGaN薄膜を1050℃にてMOCVD法により成膜し、種基板として利用可能なMOCVD−GaNテンプレートを得た。
続いて、MOCVD法によって、エピタキシャル基板を作製した。具体的には、以下の条件に従って、バッファ層としてのGaN層、チャネル層としてのGaN層、障壁層としてのAlGaN層を、上記ZnドープGaN基板上にこの順に積層形成した。なお、本実施の形態において、15族/13族ガス比とは、13族(Ga、Al)原料の供給量に対する15族(N)原料の供給量の比(モル比)である。また、Al原料ガス/13族原料ガス比とは、Al原料の供給量に対する13族(Ga、Al)原料全体の供給量の比(モル比)である。
形成温度=1150℃;
リアクタ内圧力=15kPa;
15族/13族ガス比=1000;
厚み=600nm。
形成温度=1050℃;
リアクタ内圧力=15kPa;
15族/13族ガス比=1000;
厚み=3000nm。
形成温度=1050℃;
リアクタ内圧力=5kPa;
15族/13族ガス比=12000;
Al原料ガス/13族原料ガス比=0.25;
厚み=25nm。
次に、このエピタキシャル基板10を用いてHEMT素子20を作製した。なお、HEMT素子は、ゲート幅が100μm、ソース−ゲート間隔が1μm、ゲート−ドレイン間隔が10μm、ゲート長が1μmとなるように設計した。
得られたHEMT素子について、SIMS(二次イオン質量分析法)により深さ方向の元素分析を行い、AlGaN障壁層とGaNチャネル層とGaNバッファ層とGaN基板各々におけるZn元素とSi元素の濃度を調べた。
半導体パラメーターアナライザーを用いて、HEMT素子のドレイン電流−ドレイン電圧特性(Id−Vd特性)をDCモードにて評価した。ピンチオフの閾値電圧はVg=−3Vであった。
GaNバッファ層の成長条件を実施例1とは異なる以下の条件としたほかは、実施例1と同様の条件で、HEMT素子の作製を行った。
形成温度=1050℃;
リアクタ内圧力=15kPa;
15族/13族ガス比=1000;
厚み=600nm。
GaNバッファ層の成長条件(成長温度、リアクタ内圧力、15族/13族ガス比、形成厚み)などを種々に違えた他は、実施例1と同様の条件でHEMT素子の作製を行い、得られたHEMT素子について、SIMS測定により深さ方向へのZn濃度およびSi濃度の分布を求めるとともに、IdVd=10V・Vg=−10Vの測定およびVdbの測定を行った。
バッファ層2およびチャネル層3の成長条件を実施例1とは異なる以下の条件としたほかは、実施例1と同様の条件で、エピタキシャル基板10の作製さらにはHEMT素子20の作製を行った。このうち、バッファ層2の形成に際しては、形成条件を第1条件と第2条件の2段階に設定し、形成途中で第1条件から第2条件へと切り替えるようにした。これは、バッファ層2が、AlaGa1−aN層(0<a≦1)の上にGaN層が積層された多層バッファ層、もしくは、AlおよびGaの厚み方向における存在比率が異なる組成傾斜バッファ層として形成されることを、意図したものである。なお、バッファ層2の総厚が110nmとなるようにした。
形成温度=1050℃;
リアクタ内圧=5kPa;
13族原料ガス=Al原料およびGa原料;
15族/13族ガス比=2000;
Al原料ガス/13族原料ガス比=0.03;
成長レート=1nm/秒;
成長時間=10秒。
形成温度=1050℃;
リアクタ内圧=10kPa;
13族原料ガス=Ga原料;
15族/13族ガス比=500;
成長レート=1nm/秒;
成長時間=100秒。
形成温度=1050℃;
リアクタ内圧=100kPa;
15族/13族ガス比=2000;
厚み=900nm。
バッファ層2およびチャネル層3の成長条件を実施例7とは異なる以下の条件としたほかは、実施例7と同様の条件で、HEMT素子20の作製を行った。すなわち、本実施例においても、バッファ層2の形成に際しては、形成条件を第1条件と第2条件の2段階に設定し、形成途中で第1条件から第2条件へと切り替えるようにした。また、バッファ層2の総厚が350nmとなるようにした。
形成温度=1050℃;
リアクタ内圧=5kPa;
13族原料ガス=Al原料およびGa原料;
15族/13族ガス比=2000;
Al原料ガス/13族原料ガス比=0.01;
成長レート=1nm/秒;
成長時間=50秒。
形成温度=1050℃;
リアクタ内圧=10kPa;
15族/13族ガス比=500;
成長レート=1nm/秒;
成長時間=300秒。
形成温度=1050℃;
リアクタ内圧=100kPa;
15族/13族ガス比=2000;
厚み=1700nm。
続いて、MOCVD法によって、エピタキシャル基板を作製した。具体的には、以下の条件に従って、バッファ層としてのGaN層、チャネル層としてのGaN層、障壁層としてのAlGaN層を、上記ZnドープGaN基板上にこの順に積層形成した。なお、本実施の形態において、15族/13族ガス比とは、13族(Ga、Al)原料の供給量に対する15族(N)原料の供給量の比(モル比)である。また、Al原料ガス/13族原料ガス比とは、Al原料の供給量の13族(Ga、Al)原料全体の供給量に対する比(モル比)である。
Claims (13)
- ZnがドープされたGaNからなる半絶縁性の自立基板と、
前記自立基板に隣接してなる、13族窒化物からなるバッファ層と、
前記バッファ層に隣接してなる、13族窒化物からなるチャネル層と、
前記チャネル層を挟んで前記バッファ層とは反対側に設けられてなる、13族窒化物からなる障壁層と、
を備え、
前記自立基板と前記バッファ層とからなる第1の領域の一部がSiを1×1017cm−3以上の濃度で含む第2の領域であり、前記第2の領域におけるZnの濃度の最小値が1×1017cm−3である、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項1に記載の半導体素子用エピタキシャル基板であって、
前記第2の領域は前記第1の領域において前記自立基板と前記バッファ層の界面を含んで存在する、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項1または請求項2に記載の半導体素子用エピタキシャル基板であって、
前記バッファ層はGaNからなり、
前記チャネル層はGaNからなり、
前記障壁層はAlGaNからなる、
ことを特徴とする半導体素子用エピタキシャル基板。 - 請求項1または請求項2に記載の半導体素子用エピタキシャル基板であって、
前記バッファ層は相異なる組成の2以上の13族窒化物層が積層された多層バッファ層もしくは2またはそれ以上の13族元素を含む13族窒化物からなりかつ13族元素の存在比率が厚み方向において変化する組成傾斜バッファ層であり、
前記チャネル層はGaNからなり、
前記障壁層はAlGaNからなる、
ことを特徴とする半導体素子用エピタキシャル基板。 - ZnがドープされたGaNからなる半絶縁性の自立基板と、
前記自立基板に隣接してなる、13族窒化物からなるバッファ層と、
前記バッファ層に隣接してなる、13族窒化物からなるチャネル層と、
前記チャネル層を挟んで前記バッファ層とは反対側に設けられてなる、13族窒化物からなる障壁層と、
前記障壁層の上に設けられてなるゲート電極、ソース電極、およびドレイン電極と、
を備え、
前記自立基板と前記バッファ層とからなる第1の領域の一部がSiを1×1017cm−3以上の濃度で含む第2の領域であり、前記第2の領域におけるZnの濃度の最小値が1×1017cm−3である、
ことを特徴とする半導体素子。 - 請求項5に記載の半導体素子であって、
前記第2の領域は前記第1の領域において前記自立基板と前記バッファ層の界面を含んで存在する、
ことを特徴とする半導体素子。 - 請求項5または請求項6に記載の半導体素子であって、
前記バッファ層はGaNからなり、
前記チャネル層はGaNからなり、
前記障壁層はAlGaNからなる、
ことを特徴とする半導体素子。 - 請求項5または請求項6に記載の半導体素子であって、
前記バッファ層は相異なる組成の2以上の13族窒化物層が積層された多層バッファ層もしくは2またはそれ以上の13族元素を含む13族窒化物からなりかつ13族元素の存在比率が厚み方向において変化する組成傾斜バッファ層であり、
前記チャネル層はGaNからなり、
前記障壁層はAlGaNからなる、
ことを特徴とする半導体素子。 - 半導体素子用のエピタキシャル基板を製造する方法であって、
a)ZnがドープされたGaNからなる半絶縁性の自立基板を用意する準備工程と、
b)前記自立基板に隣接させて、13族窒化物からなるバッファ層を形成するバッファ層形成工程と、
c)前記バッファ層に隣接させて、13族窒化物からなるチャネル層を形成するチャネル層工程と、
d)前記チャネル層を挟んで前記バッファ層とは反対側の位置に、13族窒化物からなる障壁層を形成する障壁層形成工程と、
を備え、
前記準備工程において用意した前記自立基板に前記バッファ層形成工程の完了までの間に外部から取り込まれたSiによって前記自立基板と前記バッファ層とからなる第1の領域の一部にSiを1×1017cm−3以上の濃度で含む第2の領域が形成され、
前記バッファ層形成工程においては、前記自立基板からZnの拡散を生じさせることにより、前記第2の領域におけるZnの濃度の最小値が1×1017cm−3となるように前記バッファ層を形成する、
ことを特徴とする半導体素子用エピタキシャル基板の製造方法。 - 請求項9に記載の半導体素子用エピタキシャル基板の製造方法であって、
前記第2の領域は前記第1の領域において前記自立基板と前記バッファ層の界面を含んで存在する、
ことを特徴とする半導体素子用エピタキシャル基板の製造方法。 - 請求項9または請求項10に記載の半導体素子用エピタキシャル基板の製造方法であって、
前記自立基板はフラックス法で作製される、
ことを特徴とする半導体素子用エピタキシャル基板の製造方法。 - 請求項9ないし請求項11のいずれかに記載の半導体素子用エピタキシャル基板の製造方法であって、
前記バッファ層はGaNにて形成され、
前記チャネル層はGaNにて形成され、
前記障壁層はAlGaNにて形成される、
ことを特徴とする半導体素子用エピタキシャル基板の製造方法。 - 請求項9ないし請求項11のいずれかに記載の半導体素子用エピタキシャル基板の製造方法であって、
前記バッファ層は相異なる組成の2以上の13族窒化物層が積層された多層バッファ層もしくは2またはそれ以上の13族元素を含む13族窒化物からなりかつ13族元素の存在比率が厚み方向において変化する組成傾斜バッファ層にて形成され、
前記チャネル層はGaNにて形成され、
前記障壁層はAlGaNにて形成される、
ことを特徴とする半導体素子用エピタキシャル基板の製造方法。
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US20180294336A1 (en) | 2018-10-11 |
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