JP2012060110A - 半導体基板、半導体デバイスおよび半導体基板の製造方法 - Google Patents
半導体基板、半導体デバイスおよび半導体基板の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 142
- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000013078 crystal Substances 0.000 claims abstract description 240
- 125000004429 atom Chemical group 0.000 claims abstract description 125
- 230000005764 inhibitory process Effects 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 19
- 150000004767 nitrides Chemical class 0.000 claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000002243 precursor Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 288
- 230000005669 field effect Effects 0.000 description 19
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- -1 InGaP Inorganic materials 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000003574 free electron Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000011701 zinc Chemical group 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
【解決手段】ベース基板と、ベース基板の上または上方に形成された第1結晶層とを有し、第1結晶層が、酸素原子およびシリコン原子からなる群より選択された少なくとも1つの原子である第1原子と、アクセプタとして機能する少なくとも1つの原子である第2原子とを含む3−5族化合物半導体層である半導体基板を提供する。半導体基板は、ベース基板の上または上方に形成された阻害層を更に有してよい。阻害層は開口を有し、阻害層は結晶成長を阻害し、阻害層は第1原子を含み、第1結晶層は、開口に形成される。
【選択図】図2
Description
特許文献1 特開平11−274082号公報
Claims (12)
- ベース基板と、
前記ベース基板の上または上方に形成された第1結晶層とを有し、
前記第1結晶層は、酸素原子およびシリコン原子からなる群より選択された少なくとも1つの原子である第1原子と、アクセプタとして機能する少なくとも1つの原子である第2原子とを含む3−5族化合物半導体層である
半導体基板。 - 前記第2原子が、Mg原子、Zn原子、Be原子およびC原子からなる群より選択された少なくとも1つの原子である
請求項1に記載の半導体基板。 - 前記第1結晶層の上方に形成された第2結晶層と、
前記第1結晶層と前記第2結晶層との間に形成された第3結晶層と
を更に有し、
前記第2結晶層および前記第3結晶層は3−5族化合物半導体層であり、
前記第3結晶層は、前記第2原子を有し、
前記第3結晶層に含まれる前記第2原子の総数が、前記第1結晶層に含まれる前記第2原子の総数より少ない
請求項1または請求項2に記載の半導体基板。 - 前記第2結晶層は、半導体能動素子の活性層として機能する
請求項3に記載の半導体基板。 - 前記第3結晶層は、空乏状態にある
請求項3または請求項4に記載の半導体基板。 - 前記第1結晶層、前記第2結晶層および前記第3結晶層が、3−5族窒化物半導体層である
請求項3から請求項5の何れか一項に記載の半導体基板。 - 前記ベース基板の上または上方に形成された阻害層を更に有し、
前記阻害層は開口を有し、
前記阻害層は結晶成長を阻害し、
前記阻害層は前記第1原子を含み、
前記第1結晶層は、前記開口に形成される
請求項1から請求項6の何れか一項に記載の半導体基板。 - 前記阻害層が、酸化シリコン層、窒化シリコン層または酸窒化シリコン層である
請求項7に記載の半導体基板。 - ベース基板と、
前記ベース基板の上または上方に形成された第1結晶層と、
前記第1結晶層の上または上方に形成された活性層と、
を有し、
前記第1結晶層は、酸素原子およびシリコン原子からなる群より選択された少なくとも1つの原子である第1原子と、アクセプタとして機能する少なくとも1つの原子である第2原子とを含む3−5族化合物半導体層である
半導体デバイス。 - ベース基板の上または上方に、酸素原子およびシリコン原子からなる群より選択された少なくとも1つの原子である第1原子を含み、結晶の成長を阻害する阻害層を形成する工程と、
前記阻害層に開口を形成する工程と、
前記開口の内部に、アクセプタとして機能する少なくとも1つの原子である第2原子を導入しながら、3−5族化合物半導体の第1結晶層をエピタキシャル成長により形成する工程と、を有する、
半導体基板の製造方法。 - ベース基板の上または上方に、酸素原子およびシリコン原子からなる群より選択された少なくとも1つの原子である第1原子を含み、結晶の成長を阻害する阻害層を形成する工程と、
前記阻害層に開口を形成する工程と、
前記開口の内部に、3−5族化合物半導体の第1結晶前駆体層をエピタキシャル成長により形成する工程と、
アクセプタとして機能する少なくとも1つの原子である第2原子で前記第1結晶前駆体層をドーピングすることにより第1結晶層を形成する工程と、を有する、
半導体基板の製造方法。 - 前記阻害層が、酸化シリコン層、窒化シリコン層または酸窒化シリコン層である
請求項10または請求項11に記載の半導体基板の製造方法。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2017077805A1 (ja) * | 2015-11-02 | 2017-05-11 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の製造方法 |
JP2017228642A (ja) * | 2016-06-22 | 2017-12-28 | 住友電気工業株式会社 | 窒化物半導体装置及び窒化物半導体装置の製造方法 |
CN108140561A (zh) * | 2015-11-02 | 2018-06-08 | 日本碍子株式会社 | 半导体元件用外延基板、半导体元件和半导体元件用外延基板的制造方法 |
JP2018093243A (ja) * | 2018-03-22 | 2018-06-14 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
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JP2003257997A (ja) * | 2002-02-28 | 2003-09-12 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体装置を製造する方法 |
JP2006332367A (ja) * | 2005-05-26 | 2006-12-07 | Sumitomo Electric Ind Ltd | 高電子移動度トランジスタ、電界効果トランジスタ、エピタキシャル基板、エピタキシャル基板を作製する方法およびiii族窒化物系トランジスタを作製する方法 |
JP2012523702A (ja) * | 2009-04-08 | 2012-10-04 | エフィシエント パワー コンヴァーション コーポレーション | GaNバッファ層におけるドーパント拡散変調 |
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- 2011-08-09 WO PCT/JP2011/004506 patent/WO2012020565A1/ja active Application Filing
- 2011-08-09 JP JP2011174364A patent/JP5746927B2/ja active Active
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WO2017077805A1 (ja) * | 2015-11-02 | 2017-05-11 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の製造方法 |
CN108140561A (zh) * | 2015-11-02 | 2018-06-08 | 日本碍子株式会社 | 半导体元件用外延基板、半导体元件和半导体元件用外延基板的制造方法 |
KR20180075524A (ko) * | 2015-11-02 | 2018-07-04 | 엔지케이 인슐레이터 엘티디 | 반도체 소자용 에피택셜 기판, 반도체 소자, 및 반도체 소자용 에피택셜 기판의 제조 방법 |
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JPWO2017077805A1 (ja) * | 2015-11-02 | 2018-08-23 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の製造方法 |
US10629688B2 (en) | 2015-11-02 | 2020-04-21 | Ngk Insulators, Ltd. | Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements |
US10770552B2 (en) | 2015-11-02 | 2020-09-08 | Ngk Insulators, Ltd. | Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements |
CN108352327B (zh) * | 2015-11-02 | 2021-07-30 | 日本碍子株式会社 | 半导体元件用外延基板、半导体元件和半导体元件用外延基板的制造方法 |
CN108140561B (zh) * | 2015-11-02 | 2022-04-12 | 日本碍子株式会社 | 半导体元件用外延基板、半导体元件和半导体元件用外延基板的制造方法 |
KR102491830B1 (ko) * | 2015-11-02 | 2023-01-25 | 엔지케이 인슐레이터 엘티디 | 반도체 소자용 에피택셜 기판, 반도체 소자, 및 반도체 소자용 에피택셜 기판의 제조 방법 |
JP2017228642A (ja) * | 2016-06-22 | 2017-12-28 | 住友電気工業株式会社 | 窒化物半導体装置及び窒化物半導体装置の製造方法 |
JP2018093243A (ja) * | 2018-03-22 | 2018-06-14 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
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JP5746927B2 (ja) | 2015-07-08 |
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