JPWO2015114836A1 - 送信機,送受信回路および無線送受信システム - Google Patents
送信機,送受信回路および無線送受信システム Download PDFInfo
- Publication number
- JPWO2015114836A1 JPWO2015114836A1 JP2015559720A JP2015559720A JPWO2015114836A1 JP WO2015114836 A1 JPWO2015114836 A1 JP WO2015114836A1 JP 2015559720 A JP2015559720 A JP 2015559720A JP 2015559720 A JP2015559720 A JP 2015559720A JP WO2015114836 A1 JPWO2015114836 A1 JP WO2015114836A1
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- signal
- data transfer
- transfer rate
- modulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000012546 transfer Methods 0.000 claims abstract description 145
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 230000010355 oscillation Effects 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims description 147
- 238000005070 sampling Methods 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 74
- 239000003990 capacitor Substances 0.000 description 32
- 238000004891 communication Methods 0.000 description 22
- 230000035945 sensitivity Effects 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 101000685663 Homo sapiens Sodium/nucleoside cotransporter 1 Proteins 0.000 description 10
- 101000821827 Homo sapiens Sodium/nucleoside cotransporter 2 Proteins 0.000 description 10
- 108010003272 Hyaluronate lyase Proteins 0.000 description 10
- 102100023116 Sodium/nucleoside cotransporter 1 Human genes 0.000 description 10
- 102100021541 Sodium/nucleoside cotransporter 2 Human genes 0.000 description 10
- 230000001276 controlling effect Effects 0.000 description 10
- 230000002457 bidirectional effect Effects 0.000 description 8
- 238000012544 monitoring process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 206010010904 Convulsion Diseases 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000036772 blood pressure Effects 0.000 description 4
- 230000036760 body temperature Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 208000035473 Communicable disease Diseases 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 210000004720 cerebrum Anatomy 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 206010015037 epilepsy Diseases 0.000 description 2
- 230000001037 epileptic effect Effects 0.000 description 2
- 208000028329 epileptic seizure Diseases 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 208000015181 infectious disease Diseases 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001537 neural effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 210000003625 skull Anatomy 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 230000033772 system development Effects 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/18—Phase-modulated carrier systems, i.e. using phase-shift keying
- H04L27/20—Modulator circuits; Transmitter circuits
- H04L27/2032—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner
- H04L27/2092—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner with digital generation of the modulated carrier (does not include the modulation of a digitally generated carrier)
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1275—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency
- H03B5/1278—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency the parameter being an amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C3/00—Angle modulation
- H03C3/10—Angle modulation by means of variable impedance
- H03C3/12—Angle modulation by means of variable impedance by means of a variable reactive element
- H03C3/22—Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode
- H03C3/225—Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode using field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
- H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
- H03L7/089—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
- H03L7/0891—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses the up-down pulses controlling source and sink current generators, e.g. a charge pump
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
- H03L7/093—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal using special filtering or amplification characteristics in the loop
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/18—Phase-modulated carrier systems, i.e. using phase-shift keying
- H04L27/20—Modulator circuits; Transmitter circuits
- H04L27/2032—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner
- H04L27/2035—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner using a single or unspecified number of carriers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L43/00—Arrangements for monitoring or testing data switching networks
- H04L43/02—Capturing of monitoring data
- H04L43/028—Capturing of monitoring data by filtering
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W4/00—Services specially adapted for wireless communication networks; Facilities therefor
- H04W4/70—Services for machine-to-machine communication [M2M] or machine type communication [MTC]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W4/00—Services specially adapted for wireless communication networks; Facilities therefor
- H04W4/80—Services using short range communication, e.g. near-field communication [NFC], radio-frequency identification [RFID] or low energy communication
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/331—Sigma delta modulation being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/333—A frequency modulator or demodulator being used in the amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/405—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45526—Indexing scheme relating to differential amplifiers the FBC comprising a resistor-capacitor combination and being coupled between the LC and the IC
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Transmitters (AREA)
- Digital Transmission Methods That Use Modulated Carrier Waves (AREA)
- Transceivers (AREA)
Abstract
Description
3 アンテナ
11 送信機
12 受信機
13 送信特性制御信号
14 受信特性制御信号
21 デジタル回路
22 マッチング回路・スイッチ
52 減衰器
53 整合器(マッチング回路)
110 フラクショナルN型PLL回路
111 可変分周器(プログラム分周器)
112 電圧制御発振器(VCO,LC−VCO)
113 分周器
114 電力増幅器(PA)
115 位相周波数検出器/チャージポンプ/ループフィルタ部(PFD/CP/LF)
116 シグマデルタモジュレータ(SDM)
117 周波数変調D/A変換器(FM DAC)
118 データインターフェース
119 クロックジェネレータ
121 可変電力低雑音増幅器(低雑音増幅器:LNA)
125 オフセットトリマ
201 シリアルペリフェラルインターフェース(SPI)
202 双方向データインターフェース
210 デジタルベースバンド回路
1141 配線負荷容量
1142 シングル−差動変換回路
1151 位相周波数検出器(PFD)
1152 チャージポンプ(CP)
1153 ループフィルタ(LF)
1220 LC並列共振回路(LCタンク)
1221,1222 ミキサ
1231,1232 LPF(プログラマブルLPF)
1241,1242 ADC
(付記1)
第1周波数の信号を変調する第1パスからの第1位相変調信号、および、前記第1周波数よりも高い第2周波数の信号を変調する第2パスからの第2位相変調信号を受け取る位相同期回路と、
利得を制御する第3パスからの第3変調信号を受け取る電力増幅器と、を有する送信機であって、
前記位相同期回路は、
前記第1位相変調信号により分周比が制御される可変分周器と、
前記第2位相変調信号を周波数変調D/A変換する周波数変調D/A変換器と、
バラクタを含み、前記第1位相変調信号に基づく第1制御電圧および前記第2位相変調信号に基づく第2制御電圧を受け取って発振周波数を制御する電圧制御発振器と、を有し、
データ転送速度に基づいて、前記電圧制御発振器における前記バラクタの容量値、前記周波数変調D/A変換器の制御ビット数、および、前記周波数変調D/A変換器のバイアス電流の少なくとも1つを変化させる、
ことを特徴とする送信機。
前記データ転送速度が、第1データ転送速度よりも高い第2データ転送速度のとき、前記バラクタの容量値を、前記第1データ転送速度の容量値よりも大きくする、
ことを特徴とする付記1に記載の送信機。
前記データ転送速度が、第1データ転送速度よりも高い第2データ転送速度のとき、前記周波数変調D/A変換器の制御ビット数を、前記第1データ転送速度のビット数よりも多くする、
ことを特徴とする付記1に記載の送信機。
前記データ転送速度が、第1データ転送速度よりも高い第2データ転送速度のとき、前記周波数変調D/A変換器のバイアス電流を、前記第1データ転送速度のバイアス電流よりも大きくする、
ことを特徴とする付記1に記載の送信機。
前記データ転送速度が、第1データ転送速度よりも高い第2データ転送速度のとき、前記第3変調信号により、前記電力増幅器の出力を、前記第1データ転送速度の出力よりも減衰させる、
ことを特徴とする付記1乃至付記4のいずれか1項に記載の送信機。
さらに、前記第1位相変調信号を受け取ってシグマデルタ変調を行うシグマデルタモジュレータを有し、
前記可変分周器は、前記シグマデルタモジュレータの出力に基づいて分周比が制御される、
ことを特徴とする付記5に記載の送信機。
さらに、前記第3変調信号を受け取る振幅変調デコーダを有し、
前記電力増幅器は、前記振幅変調デコーダの出力に基づいて利得が制御される、
ことを特徴とする付記6に記載の送信機。
さらに、前記可変分周器の出力を受け取って位相周波数検出を行い、チャージポンプおよびループフィルタを介して前記電圧制御発振器に入力する前記第1制御電圧を制御する位相周波数検出器を有する、
ことを特徴とする付記7に記載の送信機。
前記周波数変調D/A変換器,前記シグマデルタモジュレータ,前記振幅変調デコーダおよび前記位相周波数検出器に入力するクロックを、前記データ転送速度に基づいて変化させる、
ことを特徴とする付記8に記載の送信機。
付記1乃至付記9のいずれか1項に記載の送信機、および、受信機を有する、
ことを特徴とする送受信回路。
前記受信機は、
受信信号を増幅する低雑音増幅器と、
前記低雑音増幅器の出力と、ローカル周波数信号を混合するミキサと、
前記ミキサの出力を、カットオフ周波数を可変として低域周波数を通過させる可変カットオフ周波数ローパスフィルタと、
前記可変カットオフ周波数ローパスフィルタの出力を、サンプリング周波数を可変としてA/D変換する可変サンプリング周波数A/D変換器と、を含む、
ことを特徴とする付記10に記載の送受信回路。
前記受信機は、
受信信号を、電力を可変として増幅する可変電力低雑音増幅器と、
前記可変電力低雑音増幅器の出力と、ローカル周波数信号を混合するミキサと、
前記ミキサの出力の低域周波数を通過させるローパスフィルタと、
前記ローパスフィルタの出力をA/D変換するA/D変換器と、を含む、
ことを特徴とする付記10に記載の送受信回路。
付記10乃至付記12のいずれか1項に記載の送受信回路を含む少なくとも1つのノードと、
付記10乃至付記12のいずれか1項に記載の送受信回路を含む少なくとも1つのハブと、を有する、
ことを特徴とする無線送受信システム。
付記12に記載の送受信回路を含む少なくとも1つのノードと、
付記12に記載の送受信回路を含む少なくとも1つのハブと、を有する無線送受信システムであって、
前記ノードおよびハブにおいて、
信号を受け取る受信側の送受信回路における前記可変電力低雑音増幅器は、前記可変電力低雑音増幅器により前記受信信号を増幅する電力を低下したとき、拡散係数を2以上に設定する、
ことを特徴とする無線送受信システム。
付記12に記載の送受信回路を含む少なくとも1つのノードと、
付記12に記載の送受信回路を含む少なくとも1つのハブと、を有する無線送受信システムであって、
前記ノードおよびハブにおいて、
信号を受け取る受信側の送受信回路における前記可変電力低雑音増幅器は、前記可変電力低雑音増幅器により前記受信信号を増幅する電力を低下したとき、前記周波数変調D/A変換器の制御ビット数、および、前記周波数変調D/A変換器のバイアス電流の少なくとも一方を変化させる、
ことを特徴とする無線送受信システム。
3 アンテナ
11 送信機
12 受信機
13 送信特性制御信号
14 受信特性制御信号
21 デジタル回路
22 マッチング回路・スイッチ
52 減衰器
53 整合器(マッチング回路)
110 フラクショナルN型PLL回路
111 可変分周器(プログラム分周器)
112 電圧制御発振器(VCO,LC−VCO)
113 分周器
114 電力増幅器(PA)
115 位相周波数検出器/チャージポンプ/ループフィルタ部(PFD/CP/LF)
116 シグマデルタモジュレータ(SDM)
117 周波数変調D/A変換器(FM DAC)
118 データインターフェース
119 クロックジェネレータ
121 可変電力低雑音増幅器(低雑音増幅器:LNA)
125 オフセットトリマ
201 シリアルペリフェラルインターフェース(SPI)
202 双方向データインターフェース
210 デジタルベースバンド回路
1141 配線負荷容量
1142 シングル−差動変換回路
1151 位相周波数検出器(PFD)
1152 チャージポンプ(CP)
1153 ループフィルタ(LF)
1220 LC並列共振回路(LCタンク)
1221,1222 ミキサ
1231,1232 LPF(プログラマブルLPF)
1241,1242 ADC
Claims (15)
- 第1周波数の信号を変調する第1パスからの第1位相変調信号、および、前記第1周波数よりも高い第2周波数の信号を変調する第2パスからの第2位相変調信号を受け取る位相同期回路と、
利得を制御する第3パスからの第3変調信号を受け取る電力増幅器と、を有する送信機であって、
前記位相同期回路は、
前記第1位相変調信号により分周比が制御される可変分周器と、
前記第2位相変調信号を周波数変調D/A変換する周波数変調D/A変換器と、
バラクタを含み、前記第1位相変調信号に基づく第1制御電圧および前記第2位相変調信号に基づく第2制御電圧を受け取って発振周波数を制御する電圧制御発振器と、を有し、
データ転送速度に基づいて、前記電圧制御発振器における前記バラクタの容量値、前記周波数変調D/A変換器の制御ビット数、および、前記周波数変調D/A変換器のバイアス電流の少なくとも1つを変化させる、
ことを特徴とする送信機。 - 前記データ転送速度が、第1データ転送速度よりも高い第2データ転送速度のとき、前記バラクタの容量値を、前記第1データ転送速度の容量値よりも大きくする、
ことを特徴とする請求項1に記載の送信機。 - 前記データ転送速度が、第1データ転送速度よりも高い第2データ転送速度のとき、前記周波数変調D/A変換器の制御ビット数を、前記第1データ転送速度のビット数よりも多くする、
ことを特徴とする請求項1に記載の送信機。 - 前記データ転送速度が、第1データ転送速度よりも高い第2データ転送速度のとき、前記周波数変調D/A変換器のバイアス電流を、前記第1データ転送速度のバイアス電流よりも大きくする、
ことを特徴とする請求項1に記載の送信機。 - 前記データ転送速度が、第1データ転送速度よりも高い第2データ転送速度のとき、前記第3変調信号により、前記電力増幅器の出力を、前記第1データ転送速度の出力よりも減衰させる、
ことを特徴とする請求項1乃至請求項4のいずれか1項に記載の送信機。 - さらに、前記第1位相変調信号を受け取ってシグマデルタ変調を行うシグマデルタモジュレータを有し、
前記可変分周器は、前記シグマデルタモジュレータの出力に基づいて分周比が制御される、
ことを特徴とする請求項5に記載の送信機。 - さらに、前記第3変調信号を受け取る振幅変調デコーダを有し、
前記電力増幅器は、前記振幅変調デコーダの出力に基づいて利得が制御される、
ことを特徴とする請求項6に記載の送信機。 - さらに、前記可変分周器の出力を受け取って位相周波数検出を行い、チャージポンプおよびループフィルタを介して前記電圧制御発振器に入力する前記第1制御電圧を制御する位相周波数検出器を有する、
ことを特徴とする請求項7に記載の送信機。 - 前記周波数変調D/A変換器,前記シグマデルタモジュレータ,前記振幅変調デコーダおよび前記位相周波数検出器に入力するクロックを、前記データ転送速度に基づいて変化させる、
ことを特徴とする請求項8に記載の送信機。 - 請求項1乃至請求項9のいずれか1項に記載の送信機、および、受信機を有する、
ことを特徴とする送受信回路。 - 前記受信機は、
受信信号を増幅する低雑音増幅器と、
前記低雑音増幅器の出力と、ローカル周波数信号を混合するミキサと、
前記ミキサの出力を、カットオフ周波数を可変として低域周波数を通過させる可変カットオフ周波数ローパスフィルタと、
前記可変カットオフ周波数ローパスフィルタの出力を、サンプリング周波数を可変としてA/D変換する可変サンプリング周波数A/D変換器と、を含む、
ことを特徴とする請求項10に記載の送受信回路。 - 前記受信機は、
受信信号を、電力を可変として増幅する可変電力低雑音増幅器と、
前記可変電力低雑音増幅器の出力と、ローカル周波数信号を混合するミキサと、
前記ミキサの出力の低域周波数を通過させるローパスフィルタと、
前記ローパスフィルタの出力をA/D変換するA/D変換器と、を含む、
ことを特徴とする請求項10に記載の送受信回路。 - 請求項10乃至請求項12のいずれか1項に記載の送受信回路を含む少なくとも1つのノードと、
請求項10乃至請求項12のいずれか1項に記載の送受信回路を含む少なくとも1つのハブと、を有する、
ことを特徴とする無線送受信システム。 - 請求項12に記載の送受信回路を含む少なくとも1つのノードと、
請求項12に記載の送受信回路を含む少なくとも1つのハブと、を有する無線送受信システムであって、
前記ノードおよびハブにおいて、
信号を受け取る受信側の送受信回路における前記可変電力低雑音増幅器は、前記可変電力低雑音増幅器により前記受信信号を増幅する電力を低下したとき、拡散係数を2以上に設定する、
ことを特徴とする無線送受信システム。 - 請求項12に記載の送受信回路を含む少なくとも1つのノードと、
請求項12に記載の送受信回路を含む少なくとも1つのハブと、を有する無線送受信システムであって、
前記ノードおよびハブにおいて、
信号を受け取る受信側の送受信回路における前記可変電力低雑音増幅器は、前記可変電力低雑音増幅器により前記受信信号を増幅する電力を低下したとき、前記周波数変調D/A変換器の制御ビット数、および、前記周波数変調D/A変換器のバイアス電流の少なくとも一方を変化させる、
ことを特徴とする無線送受信システム。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2014/052464 WO2015114836A1 (ja) | 2014-02-03 | 2014-02-03 | 送信機,送受信回路および無線送受信システム |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2015114836A1 true JPWO2015114836A1 (ja) | 2017-03-23 |
Family
ID=53756444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015559720A Ceased JPWO2015114836A1 (ja) | 2014-02-03 | 2014-02-03 | 送信機,送受信回路および無線送受信システム |
Country Status (3)
Country | Link |
---|---|
US (1) | US20160337152A1 (ja) |
JP (1) | JPWO2015114836A1 (ja) |
WO (1) | WO2015114836A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6653707B2 (ja) * | 2015-09-02 | 2020-02-26 | 株式会社PEZY Computing | 半導体装置 |
EP3523877B1 (en) * | 2016-10-07 | 2020-10-07 | Telefonaktiebolaget LM Ericsson (publ) | Switched capacitor arrangement for tuning a differential circuit |
CA3053747C (en) * | 2017-02-16 | 2024-06-25 | Watlow Electric Manufacturing Company | Compact modular wireless sensor |
CN107872219B (zh) * | 2017-12-13 | 2023-11-24 | 福建科立讯通信有限公司 | 一种数字对讲机鉴频器与adc之间的接口电路 |
CN110649929B (zh) * | 2019-09-30 | 2021-04-27 | 郑州力通水务有限公司 | 泵站能耗数据调频发射电路 |
CN114731500A (zh) | 2020-01-17 | 2022-07-08 | 华为技术有限公司 | 一种信号处理方法和相关装置 |
US11381430B2 (en) | 2020-03-19 | 2022-07-05 | Cypress Semiconductor Corporation | Phase/frequency tracking transceiver |
US10979059B1 (en) * | 2020-10-26 | 2021-04-13 | Ciena Corporation | Successive approximation register analog to digital converter based phase-locked loop with programmable range |
JPWO2022176067A1 (ja) * | 2021-02-17 | 2022-08-25 | ||
US11955051B2 (en) * | 2021-09-07 | 2024-04-09 | Novatek Microelectronics Corp. | Receiver of display driver and operating method thereof |
US11631363B2 (en) * | 2021-09-07 | 2023-04-18 | Novatek Microelectronics Corp. | Display driver and operating method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5834987A (en) * | 1997-07-30 | 1998-11-10 | Ercisson Inc. | Frequency synthesizer systems and methods for three-point modulation with a DC response |
JP2005304007A (ja) * | 2004-03-15 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 位相変調装置、ポーラ変調送信装置、無線送信装置及び無線通信装置 |
JP2005538667A (ja) * | 2002-09-06 | 2005-12-15 | テレフオンアクチーボラゲット エル エム エリクソン(パブル) | 2点位相変調器のトリミング |
JP2007221773A (ja) * | 2006-01-19 | 2007-08-30 | Matsushita Electric Ind Co Ltd | Pll変調回路、無線送信装置及び無線通信装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5963608A (en) * | 1995-06-05 | 1999-10-05 | Broadband Communications Products, Inc. | Clock extractor for high speed, variable data rate communication system |
JP3223078B2 (ja) * | 1995-07-21 | 2001-10-29 | 株式会社日立国際電気 | 受信機 |
US6650265B1 (en) * | 2001-04-30 | 2003-11-18 | Engim, Inc. | Method and architecture for varying power consumption of a current mode digital/analog converter in proportion to performance parameters |
US6803818B2 (en) * | 2002-11-26 | 2004-10-12 | Agere Systems Inc. | Method and apparatus for improved output power level control in an amplifier circuit |
US7277518B2 (en) * | 2003-11-20 | 2007-10-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Low-jitter charge-pump phase-locked loop |
US7173554B2 (en) * | 2004-11-17 | 2007-02-06 | Analog Devices, Inc. | Method and a digital-to-analog converter for converting a time varying digital input signal |
US8050203B2 (en) * | 2004-12-22 | 2011-11-01 | Eleven Engineering Inc. | Multi-channel digital wireless audio system |
US20090042527A1 (en) * | 2007-06-12 | 2009-02-12 | Hmicro Inc. | Dynamic low power receiver |
CN101571744A (zh) * | 2008-04-30 | 2009-11-04 | 扬智科技股份有限公司 | 应用于计算机***中的功率控制装置以及功率控制方法 |
US8542616B2 (en) * | 2008-10-14 | 2013-09-24 | Texas Instruments Incorporated | Simultaneous multiple signal reception and transmission using frequency multiplexing and shared processing |
US8089383B2 (en) * | 2009-05-10 | 2012-01-03 | Cypress Semiconductor Corporation | Programmable digital-to-analog converter |
JP2012109931A (ja) * | 2010-10-25 | 2012-06-07 | Ricoh Co Ltd | オーバーサンプリング回路及びそれを用いたシリアル通信装置及びシリアル通信方法 |
US20140241462A1 (en) * | 2013-02-26 | 2014-08-28 | Nvidia Corporation | Circuit and method for envelope tracking and envelope-tracking transmitter for radio-frequency transmission |
-
2014
- 2014-02-03 JP JP2015559720A patent/JPWO2015114836A1/ja not_active Ceased
- 2014-02-03 WO PCT/JP2014/052464 patent/WO2015114836A1/ja active Application Filing
-
2016
- 2016-07-29 US US15/224,217 patent/US20160337152A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5834987A (en) * | 1997-07-30 | 1998-11-10 | Ercisson Inc. | Frequency synthesizer systems and methods for three-point modulation with a DC response |
JP2005538667A (ja) * | 2002-09-06 | 2005-12-15 | テレフオンアクチーボラゲット エル エム エリクソン(パブル) | 2点位相変調器のトリミング |
JP2005304007A (ja) * | 2004-03-15 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 位相変調装置、ポーラ変調送信装置、無線送信装置及び無線通信装置 |
JP2007221773A (ja) * | 2006-01-19 | 2007-08-30 | Matsushita Electric Ind Co Ltd | Pll変調回路、無線送信装置及び無線通信装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2015114836A1 (ja) | 2015-08-06 |
US20160337152A1 (en) | 2016-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2015114836A1 (ja) | 送信機,送受信回路および無線送受信システム | |
Zhang et al. | A reconfigurable sliding-IF transceiver for 400 MHz/2.4 GHz IEEE 802.15. 6/ZigBee WBAN hubs with only 21% tuning range VCO | |
KR101331660B1 (ko) | 단일 칩 상에 집적된 fm 송신기 및 비-fm 수신기 | |
Teo et al. | A 700-$\mu $ W Wireless Sensor Node SoC for Continuous Real-Time Health Monitoring | |
Park et al. | A sub-10-pJ/bit 5-Mb/s magnetic human body communication transceiver | |
Ali et al. | One Mbps 1 nJ/b 3.5–4 GHz fully integrated FM-UWB transmitter for WBAN applications | |
JP2004514302A (ja) | ノイズに強い複数バンド電圧制御発振器のための方法及び装置 | |
US8319562B2 (en) | System and method for amplifying a signal using multiple amplification stages sharing a common bias current | |
US9509345B2 (en) | RF transmitter for electrically short antenna | |
JP2013516897A (ja) | マルチ・モード・トランシーバ及び動作回路 | |
Devita et al. | A 5mW multi-standard Bluetooth LE/IEEE 802.15. 6 SoC for WBAN applications | |
CN107566006A (zh) | 用于减少数字‑时间转换器中的动态误差的低压差补偿技术 | |
JP2009290853A (ja) | 搬送波発振器 | |
Rahman et al. | A 2.5 nJ/bit multiband (MBAN & ISM) transmitter for IEEE 802.15. 6 based on a hybrid polyphase-MUX/ILO based modulator | |
US10263649B2 (en) | Fully integrated power amplifier employing transformer combiner with enhanced back-off efficiency | |
Fathy et al. | Low-power low-complexity FM-UWB transmitter in 130nm CMOS for WBAN applications | |
CN104871428B (zh) | 宽带无电感低噪声放大器的增益控制方法 | |
Zgaren et al. | ISM‐band 902‐to 928‐MHz FSK transceiver with scalable performance for medical devices | |
Bae et al. | Circuits and Systems for Wireless Body Area Network | |
US20130090074A1 (en) | Rf transmitter for electrically short antenna | |
US7570122B2 (en) | Low voltage LOGEN | |
US20130163689A1 (en) | Phase Shift Keying Transmitter Circuit | |
Carmo et al. | RF CMOS transceiver at 2.4 GHz in wearables for measuring the cardio-respiratory function | |
Beigi et al. | Low power receiver with merged N-path LNA and mixer for MICS applications | |
Natarajan et al. | A PLL-based BFSK transmitter with reconfigurable and PVT-tolerant class-C PA for medradio & ISM (433MHz) standards |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161102 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170905 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171120 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180403 |
|
A045 | Written measure of dismissal of application [lapsed due to lack of payment] |
Free format text: JAPANESE INTERMEDIATE CODE: A045 Effective date: 20180828 |