JPWO2007052335A1 - 半導体圧力センサ - Google Patents
半導体圧力センサ Download PDFInfo
- Publication number
- JPWO2007052335A1 JPWO2007052335A1 JP2007542184A JP2007542184A JPWO2007052335A1 JP WO2007052335 A1 JPWO2007052335 A1 JP WO2007052335A1 JP 2007542184 A JP2007542184 A JP 2007542184A JP 2007542184 A JP2007542184 A JP 2007542184A JP WO2007052335 A1 JPWO2007052335 A1 JP WO2007052335A1
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- Prior art keywords
- gold
- pressure sensor
- semiconductor
- aluminum
- wire
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L15/00—Devices or apparatus for measuring two or more fluid pressure values simultaneously
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0007—Fluidic connecting means
- G01L19/0038—Fluidic connecting means being part of the housing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/141—Monolithic housings, e.g. molded or one-piece housings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0494—4th Group
- H01L2924/04941—TiN
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (9)
- 排気ガス等の腐食性成分を含む気体の圧力を計測する圧力検出装置であって、
半導体チップの表面で、電気的入出力部となるワイヤボンディング用パッド及び特性確認用のプローブパッド以外の全面を、窒化シリコン(SiN)などの耐食性材料でコーティングし、
前記ワイヤボンディング用パッド部及び特性確認用のプローブパッド部は、アルミ電極上に密着度確保・拡散防止層を設け、該密着度確保・拡散防止層の表面を金コーティングしたことを特徴とする半導体圧力センサ。 - 請求項1において
前記密着度確保・拡散防止層はチタン・タングステン(TiW)、窒化チタン(TiN)またはニッケル(Ni)をスパッタ、蒸着、メッキにて設けたことを特徴とする半導体圧力センサ。 - 請求項1または2において、
前記密着度確保・拡散防止層は層厚が0.25μm程度で、前記窒化シリコンにオーバーハングするように構成されることを特徴とする半導体圧力センサ。 - 請求項1、2または3において、
前記半導体チップの電気的入出力部から外部入出力端子との間を金ワイヤにて接続し、前記外部入出力端子の表面は金コーティングを施したことを特徴とする半導体圧力センサ。 - 請求項1、2または3において
前記ワイヤボンディング用パッド部及び特性確認用プローブパッド部の表面の金コーティングは、スパッタ、メッキ、またはスパッタとメッキにより形成した半導体圧力センサ。 - 請求項5において
前記金コーティングの厚さは0.5μm以上であることを特徴とする半導体圧力センサ。 - 請求項1から6のいずれか1項において、
半導体チップはガラスに陽極接合されており、その陽極接合する温度は、320℃以下で接合したことを特徴とする半導体圧力センサ。 - 請求項1から6のいずれか1項において、
前記ワイヤボンディング用パッド及び特性確認用プローブパッド部に設けられる密着度確保・拡散防止層とその表面の金でコーティングは、半導体チップをガラスに陽極接合した後に実施されることを特徴とする半導体圧力センサ。 - 請求項1から6のいずれか1項において、
前記金コーティング時の振動印加による前記密着度確保・拡散防止層の破損を防止するために、前記アルミ電極のワイヤボンディングされる下部の一部のアルミを削除した構造とすることを特徴とする半導体圧力センサ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/020072 WO2007052335A1 (ja) | 2005-11-01 | 2005-11-01 | 半導体圧力センサ |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2007052335A1 true JPWO2007052335A1 (ja) | 2009-04-30 |
Family
ID=38005499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007542184A Pending JPWO2007052335A1 (ja) | 2005-11-01 | 2005-11-01 | 半導体圧力センサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8304847B2 (ja) |
EP (1) | EP1947439B1 (ja) |
JP (1) | JPWO2007052335A1 (ja) |
AT (1) | ATE545008T1 (ja) |
WO (1) | WO2007052335A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007003541A1 (de) * | 2007-01-24 | 2008-07-31 | Robert Bosch Gmbh | Elektronisches Bauteil |
JP5157654B2 (ja) * | 2008-06-04 | 2013-03-06 | 富士電機株式会社 | 半導体装置の製造方法 |
US20120292770A1 (en) * | 2011-05-19 | 2012-11-22 | General Electric Company | Method and device for preventing corrosion on sensors |
JP2014006138A (ja) * | 2012-06-25 | 2014-01-16 | Hitachi Automotive Systems Ltd | 圧力センサ装置 |
JP6136644B2 (ja) | 2013-06-28 | 2017-05-31 | 富士電機株式会社 | 半導体圧力センサ装置およびその製造方法 |
JP5952785B2 (ja) * | 2013-07-19 | 2016-07-13 | 長野計器株式会社 | 物理量測定センサ及びその製造方法 |
US9423315B2 (en) * | 2013-10-15 | 2016-08-23 | Rosemount Aerospace Inc. | Duplex pressure transducers |
FR3016439B1 (fr) * | 2014-01-12 | 2017-08-25 | Sc2N Sa | Dispositif de mesure de pression d'un fluide |
JP6372148B2 (ja) * | 2014-04-23 | 2018-08-15 | 株式会社デンソー | 半導体装置 |
FR3026182B1 (fr) * | 2014-09-19 | 2018-04-13 | Valeo Systemes De Controle Moteur | Dispositif de mesure de pression differentielle |
EP3211394B1 (en) | 2016-02-29 | 2021-03-31 | Melexis Technologies NV | Semiconductor pressure sensor for harsh media application |
JP6233445B2 (ja) * | 2016-04-26 | 2017-11-22 | 株式会社村田製作所 | 電子部品 |
EP3260833B1 (en) | 2016-06-21 | 2021-10-27 | Melexis Technologies NV | Semiconductor sensor assembly for harsh media application |
CN106353014A (zh) * | 2016-10-14 | 2017-01-25 | 沈阳市传感技术研究所 | 带有过渡焊接环的电容压力传感器 |
CN106225962A (zh) * | 2016-10-14 | 2016-12-14 | 沈阳市传感技术研究所 | 动电极板镀金的电容压力传感器 |
CN106644187A (zh) * | 2016-10-14 | 2017-05-10 | 沈阳市传感技术研究所 | 蓝宝石绝缘体定电极的电容压力传感器 |
JP6515944B2 (ja) | 2016-12-20 | 2019-05-22 | 株式会社デンソー | 半導体装置およびその製造方法 |
EP3358616B1 (en) | 2017-02-02 | 2021-10-27 | Melexis Technologies NV | Bond pad protection for harsh media applications |
JP7387338B2 (ja) | 2019-08-30 | 2023-11-28 | キヤノン株式会社 | 電気接続部付き基板の製造方法及び液体吐出ヘッド用基板の製造方法 |
US11506557B2 (en) * | 2020-10-07 | 2022-11-22 | Honywell International Inc. | Differential pressure sensor and method of using the same |
CN117257268B (zh) * | 2023-11-23 | 2024-03-12 | 微智医疗器械有限公司 | 一种颅内压监测探头制作方法及颅内压监测探头 |
CN117288368B (zh) * | 2023-11-24 | 2024-01-30 | 微智医疗器械有限公司 | 一种压力传感器组件制造方法及压力传感器组件 |
CN117322861B (zh) * | 2023-11-30 | 2024-03-12 | 微智医疗器械有限公司 | 一种颅内压探头制作方法及颅内压探头 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09250962A (ja) * | 1996-03-15 | 1997-09-22 | Matsushita Electric Works Ltd | 半導体装置 |
WO2004059722A1 (ja) * | 2002-12-24 | 2004-07-15 | Denso Corporation | 半導体式センサおよび半導体装置のめっき方法 |
JP2005033131A (ja) * | 2003-07-11 | 2005-02-03 | Denso Corp | 半導体装置 |
Family Cites Families (8)
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EP0567937A3 (en) | 1992-04-30 | 1993-12-08 | Texas Instruments Incorporated | High reliability die processing |
JPH10153508A (ja) | 1996-11-26 | 1998-06-09 | Fuji Electric Co Ltd | 半導体圧力センサ |
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US6107170A (en) * | 1998-07-24 | 2000-08-22 | Smi Corporation | Silicon sensor contact with platinum silicide, titanium/tungsten and gold |
JP3859403B2 (ja) | 1999-09-22 | 2006-12-20 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2001138521A (ja) * | 1999-11-11 | 2001-05-22 | Canon Inc | インクジェット記録ヘッドおよび該記録ヘッドを用いたインクジェット記録装置 |
US20050001316A1 (en) * | 2003-07-01 | 2005-01-06 | Motorola, Inc. | Corrosion-resistant bond pad and integrated device |
FR2867854B1 (fr) | 2004-03-17 | 2007-03-30 | Denso Corp | Detecteur de pression compact, tres precis et resistant fortement a la corrosion |
-
2005
- 2005-11-01 AT AT05800425T patent/ATE545008T1/de active
- 2005-11-01 EP EP05800425A patent/EP1947439B1/en active Active
- 2005-11-01 JP JP2007542184A patent/JPWO2007052335A1/ja active Pending
- 2005-11-01 WO PCT/JP2005/020072 patent/WO2007052335A1/ja active Application Filing
- 2005-11-01 US US12/092,226 patent/US8304847B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09250962A (ja) * | 1996-03-15 | 1997-09-22 | Matsushita Electric Works Ltd | 半導体装置 |
WO2004059722A1 (ja) * | 2002-12-24 | 2004-07-15 | Denso Corporation | 半導体式センサおよび半導体装置のめっき方法 |
JP2005033131A (ja) * | 2003-07-11 | 2005-02-03 | Denso Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1947439A4 (en) | 2009-07-01 |
EP1947439A1 (en) | 2008-07-23 |
US20090218643A1 (en) | 2009-09-03 |
EP1947439B1 (en) | 2012-02-08 |
US8304847B2 (en) | 2012-11-06 |
ATE545008T1 (de) | 2012-02-15 |
WO2007052335A1 (ja) | 2007-05-10 |
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