JPS649882A - High-thermal conductivity part and production thereof - Google Patents

High-thermal conductivity part and production thereof

Info

Publication number
JPS649882A
JPS649882A JP62166167A JP16616787A JPS649882A JP S649882 A JPS649882 A JP S649882A JP 62166167 A JP62166167 A JP 62166167A JP 16616787 A JP16616787 A JP 16616787A JP S649882 A JPS649882 A JP S649882A
Authority
JP
Japan
Prior art keywords
diamond
aggregate
thermal conductivity
orientation direction
multilayered structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62166167A
Other languages
English (en)
Inventor
Manabu Miyamoto
Kojiro Kitahata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP62166167A priority Critical patent/JPS649882A/ja
Publication of JPS649882A publication Critical patent/JPS649882A/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metal Extraction Processes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP62166167A 1987-07-02 1987-07-02 High-thermal conductivity part and production thereof Pending JPS649882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62166167A JPS649882A (en) 1987-07-02 1987-07-02 High-thermal conductivity part and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62166167A JPS649882A (en) 1987-07-02 1987-07-02 High-thermal conductivity part and production thereof

Publications (1)

Publication Number Publication Date
JPS649882A true JPS649882A (en) 1989-01-13

Family

ID=15826316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62166167A Pending JPS649882A (en) 1987-07-02 1987-07-02 High-thermal conductivity part and production thereof

Country Status (1)

Country Link
JP (1) JPS649882A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259328A (ja) * 1992-01-23 1993-10-08 Siemens Ag 半導体モジュール
EP0619282A2 (en) * 1993-04-07 1994-10-12 APPLIED SCIENCES, Inc. Diamond/carbon/carbon composite useful as an integral dielectric heat sink and method for making same
EP0655285A1 (en) * 1993-11-05 1995-05-31 General Electric Company Optically improved diamond wire-drawing-die
EP0661740A2 (en) * 1993-12-30 1995-07-05 Saint-Gobain/Norton Industrial Ceramics Corporation Thermal management of electronic components using synthetic diamond
EP0786196A4 (ja) * 1992-02-14 1997-07-30
US6660342B1 (en) 1990-09-25 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Pulsed electromagnetic energy method for forming a film

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6660342B1 (en) 1990-09-25 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Pulsed electromagnetic energy method for forming a film
US7125588B2 (en) 1990-09-25 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Pulsed plasma CVD method for forming a film
JPH05259328A (ja) * 1992-01-23 1993-10-08 Siemens Ag 半導体モジュール
EP0786196A4 (ja) * 1992-02-14 1997-07-30
EP0786196A1 (en) * 1992-02-14 1997-07-30 Materials Sciences Corporation High conductivity hybrid material for thermal management
EP0619282A2 (en) * 1993-04-07 1994-10-12 APPLIED SCIENCES, Inc. Diamond/carbon/carbon composite useful as an integral dielectric heat sink and method for making same
EP0619282A3 (en) * 1993-04-07 1995-02-15 Applied Sciences Inc Diamond / carbon / carbon composite usable as an integral dielectric heat sink and process for its manufacture.
US5604037A (en) * 1993-04-07 1997-02-18 Applied Sciences, Inc. Diamond/carbon/carbon composite useful as an integral dielectric heat sink
EP0655285A1 (en) * 1993-11-05 1995-05-31 General Electric Company Optically improved diamond wire-drawing-die
US5465603A (en) * 1993-11-05 1995-11-14 General Electric Company Optically improved diamond wire die
EP0661740A2 (en) * 1993-12-30 1995-07-05 Saint-Gobain/Norton Industrial Ceramics Corporation Thermal management of electronic components using synthetic diamond
EP0661740A3 (en) * 1993-12-30 1996-01-24 Saint Gobain Norton Ind Cerami Thermal control of electronic components using a synthetic diamond.

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