JPS649657A - Junction transistor - Google Patents
Junction transistorInfo
- Publication number
- JPS649657A JPS649657A JP16569987A JP16569987A JPS649657A JP S649657 A JPS649657 A JP S649657A JP 16569987 A JP16569987 A JP 16569987A JP 16569987 A JP16569987 A JP 16569987A JP S649657 A JPS649657 A JP S649657A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- collector
- polycrystalline layer
- low resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the junction capacity between a collector and a substrate for improving the high-frequency characteristics of a bipolar IC transistor by a method wherein electrodes are formed in two thin layers formed by proper openings in the third low resistance polycrystalline layer and the third single crystal layer. CONSTITUTION:One layer of a polycrystalline layer 6 is selectively oxidized to form an oxide film 7. During this process, the N<+> type low resistance polycrystalline layer 6 is used for a wiring of a collector. First, an N type epitaxial layer 8 is formed. At this time, the part above the polycrystalline layer 6 is formed into another polycrystalline layer 8'. Oxide film regions 9 are formed by selective oxidation. Second, N type impurity is diffused in the polycrystalline layer 8' to form an N type low resistance layer 8'. A P type base diffused layer 10, an N type emitter diffused layer 11 and an insulating film 12 are formed and then openings are made respectively 10 the layers 10, 11 and 12 as an emitter, a base and a collector to be formed into electrodes 13-15. In such a constitution, the junction capacity between the collector and the substrate can be notably reduced resultantly improving the high-frequency characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16569987A JPS649657A (en) | 1987-07-01 | 1987-07-01 | Junction transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16569987A JPS649657A (en) | 1987-07-01 | 1987-07-01 | Junction transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS649657A true JPS649657A (en) | 1989-01-12 |
Family
ID=15817369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16569987A Pending JPS649657A (en) | 1987-07-01 | 1987-07-01 | Junction transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS649657A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02278736A (en) * | 1989-04-19 | 1990-11-15 | Nec Corp | Semiconductor device |
US5216276A (en) * | 1989-12-08 | 1993-06-01 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having high matching degree and high integration density |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6189667A (en) * | 1984-10-09 | 1986-05-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS61114571A (en) * | 1984-11-09 | 1986-06-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6286860A (en) * | 1985-10-08 | 1987-04-21 | モトロ−ラ・インコ−ポレ−テツド | Polycrystalline side wall contact transistor and manufactureof the same |
-
1987
- 1987-07-01 JP JP16569987A patent/JPS649657A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6189667A (en) * | 1984-10-09 | 1986-05-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS61114571A (en) * | 1984-11-09 | 1986-06-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6286860A (en) * | 1985-10-08 | 1987-04-21 | モトロ−ラ・インコ−ポレ−テツド | Polycrystalline side wall contact transistor and manufactureof the same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02278736A (en) * | 1989-04-19 | 1990-11-15 | Nec Corp | Semiconductor device |
US5216276A (en) * | 1989-12-08 | 1993-06-01 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having high matching degree and high integration density |
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