JPS649621B2 - - Google Patents
Info
- Publication number
- JPS649621B2 JPS649621B2 JP7050383A JP7050383A JPS649621B2 JP S649621 B2 JPS649621 B2 JP S649621B2 JP 7050383 A JP7050383 A JP 7050383A JP 7050383 A JP7050383 A JP 7050383A JP S649621 B2 JPS649621 B2 JP S649621B2
- Authority
- JP
- Japan
- Prior art keywords
- tank
- photomask
- cleaning
- shower
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004140 cleaning Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 12
- 239000003792 electrolyte Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 238000009835 boiling Methods 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 238000009736 wetting Methods 0.000 claims 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 30
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 description 10
- 239000000428 dust Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- BOSAWIQFTJIYIS-UHFFFAOYSA-N 1,1,1-trichloro-2,2,2-trifluoroethane Chemical compound FC(F)(F)C(Cl)(Cl)Cl BOSAWIQFTJIYIS-UHFFFAOYSA-N 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- VHHHONWQHHHLTI-UHFFFAOYSA-N hexachloroethane Chemical compound ClC(Cl)(Cl)C(Cl)(Cl)Cl VHHHONWQHHHLTI-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明はIC、LSI、VLSI等の半導体素子製造
に用いる光露乎用マスクの洗浄方法及びそれに用
いる洗浄装置に係るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of cleaning a photo-exposure mask used in the manufacture of semiconductor devices such as IC, LSI, VLSI, etc., and a cleaning apparatus used therefor.
半導体素子製造工程に於て経済性を最も大きく
支配しているものは、光露光工程であり、従来、
光露光用マスクへの欠陥発生及び光露光工程での
半導体基板からマスクへの異物付着に対する対策
が種々検討されている。とくに密着式露光方式か
ら投影式露光方式や縮小投影式露光方式への露光
技術の変更は、半導体基板からマスクへの異物転
写がなくなり顕著に製造コストを減少した。しか
しながら、光露光方式は遠紫外、紫外線をマスク
に照射するため、マスクの透明基板の一主表面上
に形成されている遮光用の所要パターンの導電層
もしくは半導体層への静電荷蓄積により、マスク
の使用前後に浮遊塵埃が表裏面に吸着される。こ
の吸着された塵埃は、従来のマスク洗浄機におい
て、中性洗剤、純水、ジエツトスクラブ等で片面
もしくは両面（表裏面）を洗浄しているが、従来
装置では転写パターンチツプの５％未満に塵埃が
出ないことを保証することも不可能であつた。更
に、縮小投影露光装置では、3μ以上の欠陥を
“０”とし、且つ洗浄液の乾燥時のシミ、ヨゴレ
等を発生することのないレチクルマスク洗浄機が
要望されており、この種の要望に応じ、且つ作業
性の良好なマスク洗浄技術は未知であつた。 In the semiconductor device manufacturing process, the light exposure process is the one that controls economic efficiency the most.
Various countermeasures are being considered for the occurrence of defects in masks for light exposure and for the adhesion of foreign matter from semiconductor substrates to masks during the light exposure process. In particular, the change in exposure technology from a contact exposure method to a projection exposure method or a reduction projection exposure method has eliminated the transfer of foreign matter from the semiconductor substrate to the mask, and has significantly reduced manufacturing costs. However, since the light exposure method irradiates the mask with far-ultraviolet or ultraviolet rays, the mask may be damaged due to electrostatic charge accumulation on the conductive layer or semiconductor layer of the required light-shielding pattern formed on one main surface of the transparent substrate of the mask. Floating dust is attracted to the front and back surfaces before and after use. In conventional mask cleaning machines, one side or both sides (front and back) are cleaned with neutral detergent, pure water, jet scrub, etc., but in conventional mask cleaning machines, this absorbed dust accounts for less than 5% of the transferred pattern chips. It was also impossible to guarantee that no dust would be generated. Furthermore, in reduction projection exposure equipment, there is a demand for a reticle mask cleaning machine that has zero defects of 3μ or more and does not generate stains or dirt when the cleaning liquid dries. , and a mask cleaning technique with good workability was unknown.
本発明の目的は、縮小投影露光装置に用いるレ
チクルマスクの3μ以上の付着物を完全に除去で
きるレチクルマスク洗浄方法とその洗浄装置を提
供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a reticle mask cleaning method and a cleaning device for the reticle mask that can completely remove deposits of 3 microns or more from a reticle mask used in a reduction projection exposure apparatus.
次に本発明の実施例について図面を参照して説
明する。 Next, embodiments of the present invention will be described with reference to the drawings.
図は本発明の実施例を表わした図であり、本実
施例のマスク洗浄方法および装置は次の通りであ
る。すなわち、マスク洗浄装置は電解液槽１０
０、シヤワー槽２００、蒸気槽３００の３つの洗
浄槽より成るものである。まず、電解槽１００
は、二重槽の構造を持ち、ポンプ１によりアンモ
ニア水２が内槽に供給される。供給されたアンモ
ニア水２は内槽３よりあふれ出て外槽４へ溜ま
る。外槽４へはポンプ１の吸引側が接続されてお
り、ポンプ１を通して、再び内槽３にアンモニア
水２が供給される。尚、電解液２の清浄度維持の
ため電解液２の循環ラインには、フイルタ１６が
取り付けてある。 The figure shows an embodiment of the present invention, and the mask cleaning method and apparatus of this embodiment are as follows. That is, the mask cleaning device uses the electrolyte tank 10.
0, a shower tank 200, and a steam tank 300. First, the electrolytic tank 100
has a double tank structure, and a pump 1 supplies ammonia water 2 to the inner tank. The supplied ammonia water 2 overflows from the inner tank 3 and accumulates in the outer tank 4. The suction side of a pump 1 is connected to the outer tank 4, and the ammonia water 2 is supplied to the inner tank 3 again through the pump 1. Incidentally, a filter 16 is attached to the circulation line of the electrolytic solution 2 in order to maintain the cleanliness of the electrolytic solution 2.
一方シヤワー槽２００は、ホトマスク１０を出
し入れするだけのスリツトを設けた密閉槽５の中
に、図に表すように、ホトマスク１０に対して両
側の上、中、下段にシヤワーノズル６が取り付け
られている。密閉槽５の底にはドレンを設け、そ
の下にイソプロピルアルコール９を溜めるタンク
７が取り付けられている。このタンク７より、ポ
ンプ８によつてイソプロピルアルコール９は加圧
され、シヤワーノズル６に達する。イソプロピル
アルコール９のシヤワーにより、ホトマスク１０
は洗浄される。このように、イソプロピルアルコ
ール９はポンプ８により循環され、又その循環ラ
インにはイソプロピルアルコール清浄度維持のた
め、フイルタ１１が取り付けられている。 On the other hand, the shower tank 200 has shower nozzles 6 attached to the upper, middle, and lower tiers on both sides of the photomask 10, as shown in the figure, in a closed tank 5 that has a slit that allows the photomask 10 to be taken in and taken out. There is. A drain is provided at the bottom of the closed tank 5, and a tank 7 for storing isopropyl alcohol 9 is attached below the drain. Isopropyl alcohol 9 is pressurized from this tank 7 by a pump 8 and reaches the shower nozzle 6. A shower of 9 parts of isopropyl alcohol removes 10 parts of the photomask.
is washed. In this way, the isopropyl alcohol 9 is circulated by the pump 8, and a filter 11 is attached to the circulation line to maintain the cleanliness of the isopropyl alcohol.
蒸気槽３００は、これもまた、ホトマスク１０
を出し入れするだけのスリツトを開け、他は密閉
された槽１２の中にトリクロロトリクルオロエタ
ン１３を入れ、槽１２の底部にヒーター１４を取
りつける。一方、槽１２の上部には冷却水が流れ
ている冷却パイプ１５が設けられて、蒸発したト
リクロロトリフルオロエタン１３を結露させて、
槽１２の底部に戻す構造となつている。 The steam tank 300 also has a photomask 10
Trichlorotrichloroethane 13 is placed in a tank 12 which is otherwise sealed, with a slit just enough to take it in and out, and a heater 14 is attached to the bottom of the tank 12. On the other hand, a cooling pipe 15 through which cooling water flows is provided in the upper part of the tank 12, and the evaporated trichlorotrifluoroethane 13 is condensed.
It has a structure in which it is returned to the bottom of the tank 12.
以上のような構成で、順次ホトマスク１０を上
下させながら、各槽を通して洗浄することにより
下記のような効果が得られる。 With the above configuration, the following effects can be obtained by cleaning through each tank while sequentially moving the photomask 10 up and down.
まず、第１工程である電解液槽１００におい
て、フイルタ１６にて過された常にある一定の清
浄度に維持されたアンモニア水２により、ホトマ
スク１０は洗浄され、かつ、ホトマスク１０をこ
の電解液槽１００より取り出したときにも、アン
モニア水２であるがゆえに、ホトマスク１０上に
静電気が帯びることがないため、静電気によるホ
トマスクへのゴミ、チリの吸着等が皆無となる。
又アンモニア水中を浮遊している塵埃等は、アン
モニア水２がオーバーフローするとともに外槽４
に流れ込み、ポンプ１、フイルタ１６を通して濾
過される。 First, in the electrolyte bath 100, which is the first step, the photomask 10 is cleaned with ammonia water 2 that is passed through a filter 16 and is always maintained at a certain level of cleanliness. Since it is ammonia water 2, the photomask 10 will not be charged with static electricity even when it is taken out from the photomask 100, so there will be no adsorption of dirt or dust to the photomask due to static electricity.
In addition, dust etc. floating in the ammonia water are removed from the outer tank 4 when the ammonia water 2 overflows.
and is filtered through pump 1 and filter 16.
次に第２工程であるシヤワー槽２００において
イソプロピルアルコール９をホトマスク１０に吹
きかけることにより、ホトマスク表面上のアンモ
ニア水２をイソプロピルアルコール９に置換し、
次工程の乾燥を安易にかつ確実に行なわしめる。
又イソプロピルアルコール９のシヤワーを用いて
ホトマスク１０を洗浄するため、ホトマスク１０
に付着している塵埃を除去する効果は、通常の浸
せき方式に比較して、非常に高く、時間も短いた
め効率的である。 Next, in the second step, a shower tank 200, by spraying isopropyl alcohol 9 onto the photomask 10, the ammonia water 2 on the photomask surface is replaced with isopropyl alcohol 9,
To easily and reliably perform the next step of drying.
In addition, in order to clean the photomask 10 using a shower of isopropyl alcohol 9, the photomask 10
The effect of removing dust adhering to the surface is much higher than that of the normal immersion method, and it is efficient because it takes a shorter time.
最後の第３工程である蒸気槽３００は、トリク
ロロトリフルオロエタン１３の蒸気にホトマスク
１０を浸すことを目的とする。ホトマスク１０を
一旦、トリクロロトリフルオロエタン１３の蒸気
に浸した後、ホトマスク１０を蒸気槽より取り出
すとホトマスク１０は、短時間で、かつ自然乾燥
に近い状態で完全に乾燥される。この第３工程で
は、塵埃等の付着、吸着のこと考えると、短い時
間で完全に自然乾燥させることが是非必要であ
り、本蒸気槽はその役割りを充分に果すものであ
る。 The purpose of the third and final step, the steam bath 300, is to immerse the photomask 10 in the vapor of trichlorotrifluoroethane 13. Once the photomask 10 is immersed in the vapor of trichlorotrifluoroethane 13, the photomask 10 is taken out of the steam bath, and the photomask 10 is completely dried in a short period of time and in a state close to natural drying. In this third step, considering the adhesion and adsorption of dust, etc., it is absolutely necessary to dry completely naturally in a short period of time, and this steam tank fully fulfills this role.
以上、実施例にもとづいて、本発明の説明を行
なつたが、電解液にはアンモニア水以外炭酸水で
も良く、要するに静電気を帯びないでフイルタに
より清浄度が維持出来る薬液なら良い。又シヤワ
ー槽においてもイソプロピルアルコール以外のア
ルコール系有機薬品なら効果は同じである。シヤ
ワーノズルの形状も、本発明ではフルコーン型ノ
ズルを用いたが、フラツトコーン型ノズルを混ぜ
たり、ノズル数を変えることによつて、ホトマス
クの汚れ具合により適切なシヤワー洗浄が可能で
あり、より一層の効果が得られる。 The present invention has been described above based on Examples, but the electrolytic solution may be carbonated water other than ammonia water, and in short, any chemical solution that is not charged with static electricity and whose cleanliness can be maintained by a filter may be used. Also, in the shower tank, the effect is the same if alcohol-based organic chemicals other than isopropyl alcohol are used. Regarding the shape of the shower nozzle, although a full cone nozzle was used in the present invention, by mixing in a flat cone nozzle or changing the number of nozzles, it is possible to perform appropriate shower cleaning depending on the degree of dirt on the photomask. Effects can be obtained.
図は本発明の実施例を表わした模型的断面図で
ある。
１……電解液循環用ポンプ、２……アンモニア
水、３……電解液槽の内槽、４……電解液槽の外
槽、５……シヤワー用密閉槽、６……シヤワーノ
ズル、７……タンク、８……アルコール系有機薬
品循環用ポンプ、９……イソプロピルアルコー
ル、１０……ホトマスク、１１……アルコール系
有機薬品用フイルタ、１２……蒸気槽用密閉槽、
１３……トリクロロトリフルオロエタン、１４…
…ヒーター、１５……冷却パイプ、１６……電解
液用フイルタ。
The figure is a schematic cross-sectional view showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Electrolyte circulation pump, 2... Ammonia water, 3... Inner tank of electrolyte tank, 4... Outer tank of electrolyte tank, 5... Sealed tank for shower, 6... Shower nozzle, 7 ... Tank, 8 ... Pump for circulation of alcohol-based organic chemicals, 9 ... Isopropyl alcohol, 10 ... Photomask, 11 ... Filter for alcohol-based organic chemicals, 12 ... Sealed tank for steam tank,
13...trichlorotrifluoroethane, 14...
... Heater, 15 ... Cooling pipe, 16 ... Electrolyte filter.
Claims (1)
次に前記ホトマスクをアルコール系有機薬品でシ
ヤワー洗浄する第２の工程と、その後前記ホトマ
スクをフツ化炭化水素系の蒸気を用いて蒸気洗浄
及び乾燥する第３の工程とを含むことを特徴とす
るホトマスクの洗浄方法。 ２ 槽下部から液体を導入して上部からオーバー
フローさせる手段を有する第１の洗浄槽と、槽内
にシヤワー装置を有する第２の洗浄槽と、槽内に
低沸点物質の蒸気を発生させる手段を有する第３
の洗浄槽を具備し、フオトマスクを保持した保持
治具が前記各洗浄槽を順次処理移動する機構を備
えていることを特徴とするホトマスクの洗浄装
置。[Claims] 1. A first step of wetting a photomask with an electrolyte;
Next, the method includes a second step of shower cleaning the photomask with an alcohol-based organic chemical, and a third step of cleaning and drying the photomask using fluorinated hydrocarbon vapor. How to clean a photomask. 2. A first cleaning tank having a means for introducing liquid from the bottom of the tank and overflowing from the top, a second cleaning tank having a shower device in the tank, and a means for generating vapor of a low boiling point substance in the tank. 3rd having
What is claimed is: 1. A photomask cleaning apparatus comprising: a cleaning tank; and a mechanism for sequentially moving a holding jig holding a photomask through each of the cleaning tanks.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58070503A JPS59195654A (en) | 1983-04-21 | 1983-04-21 | Method and device for washing photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58070503A JPS59195654A (en) | 1983-04-21 | 1983-04-21 | Method and device for washing photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59195654A JPS59195654A (en) | 1984-11-06 |
| JPS649621B2 true JPS649621B2 (en) | 1989-02-17 |
Family
ID=13433393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58070503A Granted JPS59195654A (en) | 1983-04-21 | 1983-04-21 | Method and device for washing photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59195654A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6161685A (en) * | 1984-08-31 | 1986-03-29 | 佐波 二三雄 | Washing of machine parts |
| JPH0320734A (en) * | 1989-06-16 | 1991-01-29 | Matsushita Electron Corp | Cleaning device |
| JP2577867Y2 (en) * | 1990-12-28 | 1998-08-06 | 東京瓦斯株式会社 | Bathtub cleaning nozzle |
| JP2001192699A (en) * | 2000-01-07 | 2001-07-17 | Minolta Co Ltd | Method for washing |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5712831A (en) * | 1980-06-06 | 1982-01-22 | Standard Oil Co | Carbonylation of olefin unsaturated compound |
| JPS57141614A (en) * | 1981-02-25 | 1982-09-02 | Canon Inc | Manufacture of electrooptical display device |
-
1983
- 1983-04-21 JP JP58070503A patent/JPS59195654A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59195654A (en) | 1984-11-06 |
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