JPS6490032A - Molecular beam cell - Google Patents
Molecular beam cellInfo
- Publication number
- JPS6490032A JPS6490032A JP24835287A JP24835287A JPS6490032A JP S6490032 A JPS6490032 A JP S6490032A JP 24835287 A JP24835287 A JP 24835287A JP 24835287 A JP24835287 A JP 24835287A JP S6490032 A JPS6490032 A JP S6490032A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- gas
- molecular
- reaction tube
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To obtain a molecular beam at a low temp. and to suppress the effects of gas released from the cell and entrainment by setting a vessel contg. starting material for molecular beam formation in a reaction tube provided with a small pipe for introducing gas, a pressure regulating means which is also used as a molecular beam blowing nozzle and a heating means. CONSTITUTION:A reaction tube 4 is provided with a small pipe 10 for introducing gas, a pressure regulating means 11 which doubles as a molecular beam blowing nozzle and a heating means 3 such as a tantalum heater. A boat 2 contg. starting material 1 for molecular beams such as Ga is set in the reaction tube 4. Gas 6 such as Cl is introduced into the tube 4 from a stainless steel pipe 8 through the small pipe 10. Since molecular beams can be obtd. at a low temp. in the resulting cell, the effect of gas and splashes released from the cell together wit molecular beams can be suppressed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62248352A JP2652947B2 (en) | 1987-09-30 | 1987-09-30 | Molecular beam cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62248352A JP2652947B2 (en) | 1987-09-30 | 1987-09-30 | Molecular beam cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6490032A true JPS6490032A (en) | 1989-04-05 |
JP2652947B2 JP2652947B2 (en) | 1997-09-10 |
Family
ID=17176819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62248352A Expired - Lifetime JP2652947B2 (en) | 1987-09-30 | 1987-09-30 | Molecular beam cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2652947B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5222074A (en) * | 1990-06-05 | 1993-06-22 | Matsushita Electric Industrial Co., Ltd. | Thermal decomposition cell |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61261294A (en) * | 1985-05-14 | 1986-11-19 | Nippon Telegr & Teleph Corp <Ntt> | Method of molecular beam epitaxial growth and molecular beam source |
-
1987
- 1987-09-30 JP JP62248352A patent/JP2652947B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61261294A (en) * | 1985-05-14 | 1986-11-19 | Nippon Telegr & Teleph Corp <Ntt> | Method of molecular beam epitaxial growth and molecular beam source |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5222074A (en) * | 1990-06-05 | 1993-06-22 | Matsushita Electric Industrial Co., Ltd. | Thermal decomposition cell |
Also Published As
Publication number | Publication date |
---|---|
JP2652947B2 (en) | 1997-09-10 |
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