JPS6488993A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS6488993A
JPS6488993A JP62247179A JP24717987A JPS6488993A JP S6488993 A JPS6488993 A JP S6488993A JP 62247179 A JP62247179 A JP 62247179A JP 24717987 A JP24717987 A JP 24717987A JP S6488993 A JPS6488993 A JP S6488993A
Authority
JP
Japan
Prior art keywords
input
sense amplifiers
numberth
uneven
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62247179A
Other languages
Japanese (ja)
Inventor
Machio Segawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62247179A priority Critical patent/JPS6488993A/en
Publication of JPS6488993A publication Critical patent/JPS6488993A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To use only one side, that means, a column decoder, an input/output bus and an switching transistor by respectively connecting the two digit lines of an uneven numberth and uneven numberth to a first and a second sense amplifiers, switching a selection transistor provided between them and transfer ring data between a memory cell and the input/output bus. CONSTITUTION:Word lines W1-Wm and the digit lines D1,-D2-D2n,-D2n are respectively connected to plural memory cells M1,1-M2n,m arranged in a matrix state in a prescribed way and the word lines W1-Wm are respectively connected to the output terminal of a row decoder 2. The first and the second sense amplifiers S1,2-S1,n and S2,1-S2,n respectively amplifies voltage difference impressed on the first and a second input/output terminals, outputs it and makes the electric potential of the input/output terminals to be the same by a first and a second reset signals R1 and R2. Besides, the first Q1,1-Q1,2n the second Q2,1-Q2,2n the third Q3,1-Q3,2n and the forth Q4,1-Q4,2n selection transistor are provided so as to select the digit line and one of the sense amplifiers S1,1-S1,n and S2,1-S2,n is operated.
JP62247179A 1987-09-29 1987-09-29 Semiconductor memory Pending JPS6488993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62247179A JPS6488993A (en) 1987-09-29 1987-09-29 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62247179A JPS6488993A (en) 1987-09-29 1987-09-29 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS6488993A true JPS6488993A (en) 1989-04-03

Family

ID=17159617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62247179A Pending JPS6488993A (en) 1987-09-29 1987-09-29 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS6488993A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177193A (en) * 1988-12-20 1990-07-10 Samsung Electron Co Ltd Semiconductor memory
JPH03212890A (en) * 1989-12-30 1991-09-18 Samsung Electron Co Ltd Semiconductor memory array
JPH05101643A (en) * 1991-10-07 1993-04-23 Nec Corp Semiconductor storage device
JP2011192373A (en) * 2010-03-11 2011-09-29 Soi Tec Silicon On Insulator Technologies Nano-sense amplifier for memory
US8664712B2 (en) 2009-12-08 2014-03-04 Soitec Flash memory cell on SeOI having a second control gate buried under the insulating layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690491A (en) * 1979-12-21 1981-07-22 Hitachi Ltd Memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690491A (en) * 1979-12-21 1981-07-22 Hitachi Ltd Memory

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177193A (en) * 1988-12-20 1990-07-10 Samsung Electron Co Ltd Semiconductor memory
JPH03212890A (en) * 1989-12-30 1991-09-18 Samsung Electron Co Ltd Semiconductor memory array
JPH05101643A (en) * 1991-10-07 1993-04-23 Nec Corp Semiconductor storage device
US8664712B2 (en) 2009-12-08 2014-03-04 Soitec Flash memory cell on SeOI having a second control gate buried under the insulating layer
JP2011192373A (en) * 2010-03-11 2011-09-29 Soi Tec Silicon On Insulator Technologies Nano-sense amplifier for memory
US8625374B2 (en) 2010-03-11 2014-01-07 Soitec Nano-sense amplifier

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