JPS648648A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS648648A JPS648648A JP16422787A JP16422787A JPS648648A JP S648648 A JPS648648 A JP S648648A JP 16422787 A JP16422787 A JP 16422787A JP 16422787 A JP16422787 A JP 16422787A JP S648648 A JPS648648 A JP S648648A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- heat
- heat sink
- metal layer
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
PURPOSE:To alleviate a temperature rise and to raise the integration and power consumption of a semiconductor integrated circuit by providing a semiconductor chip contained in a package, a semiconductor element provided on the chip, a heat sink metal layer insulated from a wiring layer, and a bonding wire for connecting the metal layer to a lead terminal. CONSTITUTION:A structure having a package 2 including a plurality of lead terminals 21, a semiconductor chip 1 including a wiring layer 11 for connecting the electrodes of a semiconductor element, a bonding pad 13 for connecting the layer 11 and an insulating layer 12 provided on a whole surface of the layer 11 except the pad 13, and a heat sink metal layer 4 connected to the terminals 21 via bonding wirings 5 provided on the layer 12 and having good thermal conductivity is provided. Accordingly, the heat generated from transistors and resistors are dissipated, in addition to the terminals 21 through the fine wirings and bonding wirings 5 of the layer 11 and a heat sink plate 3 through the silicon substrate of the chip 1 and a package 2, from a heat sink metal layer 4 for efficiently thermally absorbing the heat of and conducting with a heat generator with a wide surface area near the heat generator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16422787A JPS648648A (en) | 1987-06-30 | 1987-06-30 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16422787A JPS648648A (en) | 1987-06-30 | 1987-06-30 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS648648A true JPS648648A (en) | 1989-01-12 |
Family
ID=15789085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16422787A Pending JPS648648A (en) | 1987-06-30 | 1987-06-30 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS648648A (en) |
-
1987
- 1987-06-30 JP JP16422787A patent/JPS648648A/en active Pending
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