JPS6483659A - Sputtering device for producing oxide superconductive material - Google Patents
Sputtering device for producing oxide superconductive materialInfo
- Publication number
- JPS6483659A JPS6483659A JP62241876A JP24187687A JPS6483659A JP S6483659 A JPS6483659 A JP S6483659A JP 62241876 A JP62241876 A JP 62241876A JP 24187687 A JP24187687 A JP 24187687A JP S6483659 A JPS6483659 A JP S6483659A
- Authority
- JP
- Japan
- Prior art keywords
- superconductive material
- magnetic fields
- oxide superconductive
- magnetic
- generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y02E40/642—
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
PURPOSE:To produce the thin films of an oxide superconductive material oriented in a prescribed direction at a low temp. by generating magnetic fields between opposed targets, disposing surfaces to be formed in the magnetic fields and orienting the crystals under film formation. CONSTITUTION:The targets 20, 20' are disposed to face each other. A magnet 7 to form a magnetic circuit is set as N and a magnet 7' as S. The closed magnetic circuit is constituted except in the space for generating the magnetic fields by using the magnetic fields 33, 33' and a coil 21 for generating the magnetic fields so that about >=0.1T magnetic field 31 is generated. Plural substrates 1 are disposed in this magnetic field 31 and the oxide superconductive material 2 is sputtered and formed on the surfaces thereof to be formed with the films. The thin films of the oxide superconductive material operating at the temp. above the liquid nitrogen temp. are thereby formed.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62241876A JPS6483659A (en) | 1987-09-24 | 1987-09-24 | Sputtering device for producing oxide superconductive material |
US07/246,611 US4963524A (en) | 1987-09-24 | 1988-09-20 | Sputtering device for manufacturing superconducting oxide material and method therefor |
CN88107590A CN1019251B (en) | 1987-09-24 | 1988-09-24 | Method of mfg. superconducting oxide ceramic material film |
EP19880308904 EP0309294A3 (en) | 1987-09-24 | 1988-09-26 | Method and apparatus for the manufacture of superconducting oxide materials |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62241876A JPS6483659A (en) | 1987-09-24 | 1987-09-24 | Sputtering device for producing oxide superconductive material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6483659A true JPS6483659A (en) | 1989-03-29 |
Family
ID=17080848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62241876A Pending JPS6483659A (en) | 1987-09-24 | 1987-09-24 | Sputtering device for producing oxide superconductive material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6483659A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01246355A (en) * | 1988-03-28 | 1989-10-02 | Res Dev Corp Of Japan | Formation of multiple oxides superconducting thin film by counter target-type sputtering method and device therefor |
US5250998A (en) * | 1991-02-28 | 1993-10-05 | Konica Corporation | Fixing apparatus having two nip regions |
WO2016103126A1 (en) * | 2014-12-26 | 2016-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, display module, electronic device, oxide, and manufacturing method of oxide |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6029463A (en) * | 1983-07-26 | 1985-02-14 | Konishiroku Photo Ind Co Ltd | Niobium nitride film |
JPS63257130A (en) * | 1987-04-14 | 1988-10-25 | Sumitomo Electric Ind Ltd | Manufacture of superconductive thin film |
-
1987
- 1987-09-24 JP JP62241876A patent/JPS6483659A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6029463A (en) * | 1983-07-26 | 1985-02-14 | Konishiroku Photo Ind Co Ltd | Niobium nitride film |
JPS63257130A (en) * | 1987-04-14 | 1988-10-25 | Sumitomo Electric Ind Ltd | Manufacture of superconductive thin film |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01246355A (en) * | 1988-03-28 | 1989-10-02 | Res Dev Corp Of Japan | Formation of multiple oxides superconducting thin film by counter target-type sputtering method and device therefor |
US5250998A (en) * | 1991-02-28 | 1993-10-05 | Konica Corporation | Fixing apparatus having two nip regions |
WO2016103126A1 (en) * | 2014-12-26 | 2016-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, display module, electronic device, oxide, and manufacturing method of oxide |
US9831353B2 (en) | 2014-12-26 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, display module, electronic device, oxide, and manufacturing method of oxide |
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