JPS6482564A - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
JPS6482564A
JPS6482564A JP62241838A JP24183887A JPS6482564A JP S6482564 A JPS6482564 A JP S6482564A JP 62241838 A JP62241838 A JP 62241838A JP 24183887 A JP24183887 A JP 24183887A JP S6482564 A JPS6482564 A JP S6482564A
Authority
JP
Japan
Prior art keywords
conductivity type
layer
resistance
epitaxial layer
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62241838A
Other languages
Japanese (ja)
Inventor
Hiroyasu Hagino
Hiroshi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62241838A priority Critical patent/JPS6482564A/en
Priority to DE3851815T priority patent/DE3851815T2/en
Priority to EP88111722A priority patent/EP0308612B1/en
Publication of JPS6482564A publication Critical patent/JPS6482564A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce sufficiently ON resistance in an element constitution, by constituting a gentle concentration distribution of impurity between a second conductivity type substrate of high concentration having small diffusion coefficient and an epitaxial layer of low concentration, making the thickness of the epitaxial layer thin, and forming an N-type semiconductor layer of low resistance sandwiched by first conductivity type base layers. CONSTITUTION:Between a second conductivity type substrate 21 of low resistance having small diffusion coefficient, and a second conductivity type epitaxial layer 22 of high resistance, a second conductivity type buffer layer 10 of comparatively low resistance having large diffusion coefficient is made largely protruded on the epitaxial layer 22 side, and a protruding layer 11 is formed to constitute impurity concentration distribution of gentle gradient between the substrate 21 and the epitaxial layer 22. Breakdown voltage is kept by the gradient of impurity concentration distribution, and the thickness of the epitaxial layer 22 is made about one-half of that of the prior layer to reduce a resistance REpi. Further, a semiconductor layer 30 of comparatively low resistance as a second conductivity type layer sandwiched by first conductivity type base layers 23 is formed, and the distance between each of the base layers is reduced. However, ON resistance Ron can be decreased.
JP62241838A 1987-09-24 1987-09-24 Field-effect semiconductor device Pending JPS6482564A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62241838A JPS6482564A (en) 1987-09-24 1987-09-24 Field-effect semiconductor device
DE3851815T DE3851815T2 (en) 1987-09-24 1988-07-20 Field effect transistor and its manufacturing method.
EP88111722A EP0308612B1 (en) 1987-09-24 1988-07-20 Field effect transistor and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62241838A JPS6482564A (en) 1987-09-24 1987-09-24 Field-effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS6482564A true JPS6482564A (en) 1989-03-28

Family

ID=17080251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62241838A Pending JPS6482564A (en) 1987-09-24 1987-09-24 Field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS6482564A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250731A (en) * 1994-12-30 1996-09-27 Siliconix Inc Trench type mosfet provided with high break-down voltage and low on-resistance both
US6384431B1 (en) 1999-10-08 2002-05-07 Denso Corporation Insulated gate bipolar transistor
JP2015035566A (en) * 2013-08-09 2015-02-19 新電元工業株式会社 Semiconductor device manufacturing method and semiconductor device
WO2016143099A1 (en) * 2015-03-11 2016-09-15 株式会社日立製作所 Semiconductor device, method for manufacturing same, and power conversion device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742164A (en) * 1980-08-27 1982-03-09 Hitachi Ltd Semiconductor device
JPS57153469A (en) * 1981-03-18 1982-09-22 Toshiba Corp Insulated gate type field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742164A (en) * 1980-08-27 1982-03-09 Hitachi Ltd Semiconductor device
JPS57153469A (en) * 1981-03-18 1982-09-22 Toshiba Corp Insulated gate type field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250731A (en) * 1994-12-30 1996-09-27 Siliconix Inc Trench type mosfet provided with high break-down voltage and low on-resistance both
US6384431B1 (en) 1999-10-08 2002-05-07 Denso Corporation Insulated gate bipolar transistor
JP2015035566A (en) * 2013-08-09 2015-02-19 新電元工業株式会社 Semiconductor device manufacturing method and semiconductor device
WO2016143099A1 (en) * 2015-03-11 2016-09-15 株式会社日立製作所 Semiconductor device, method for manufacturing same, and power conversion device
JPWO2016143099A1 (en) * 2015-03-11 2017-07-13 株式会社日立製作所 Semiconductor device, method of manufacturing the same, and power conversion device

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