JPS5752163A - Lateral type bipolar transistor - Google Patents
Lateral type bipolar transistorInfo
- Publication number
- JPS5752163A JPS5752163A JP12718780A JP12718780A JPS5752163A JP S5752163 A JPS5752163 A JP S5752163A JP 12718780 A JP12718780 A JP 12718780A JP 12718780 A JP12718780 A JP 12718780A JP S5752163 A JPS5752163 A JP S5752163A
- Authority
- JP
- Japan
- Prior art keywords
- region
- base region
- emitter
- base
- boundary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To increase the Hfe of a lateral type bipolar transistor and to improve the noise characteristics of the transistor by forming the same conductive type high impurity concentration region as a base region on the surface of the base region surrounding an emitter region. CONSTITUTION:A lateral transistor formed with a high density region 15 added with the same conductive type impurity as a base region 14 is formed on the surface of the base region 14 surrounding an emitter region 11. At this time the injection of carrier to the base region 14 from the emitter region 11 does not occur in the boundary of a high density region 15, but occurs in the boundary of the base region in the deep region. Since the carrier injected from the emitter is conducted through the base region in the deep region to reach the collector region 12, the carrier is not affected by the influence of the boundary level of the surface of the semiconductor, but high Hfe can be obtained, thereby improving the noise characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12718780A JPS5752163A (en) | 1980-09-16 | 1980-09-16 | Lateral type bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12718780A JPS5752163A (en) | 1980-09-16 | 1980-09-16 | Lateral type bipolar transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5752163A true JPS5752163A (en) | 1982-03-27 |
Family
ID=14953827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12718780A Pending JPS5752163A (en) | 1980-09-16 | 1980-09-16 | Lateral type bipolar transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5752163A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS573096A (en) * | 1980-06-09 | 1982-01-08 | Tokyo Shibaura Electric Co | Atomic power plant |
-
1980
- 1980-09-16 JP JP12718780A patent/JPS5752163A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS573096A (en) * | 1980-06-09 | 1982-01-08 | Tokyo Shibaura Electric Co | Atomic power plant |
JPH0152720B2 (en) * | 1980-06-09 | 1989-11-09 | Toshiba Kk |
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