JPS5752163A - Lateral type bipolar transistor - Google Patents

Lateral type bipolar transistor

Info

Publication number
JPS5752163A
JPS5752163A JP12718780A JP12718780A JPS5752163A JP S5752163 A JPS5752163 A JP S5752163A JP 12718780 A JP12718780 A JP 12718780A JP 12718780 A JP12718780 A JP 12718780A JP S5752163 A JPS5752163 A JP S5752163A
Authority
JP
Japan
Prior art keywords
region
base region
emitter
base
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12718780A
Other languages
Japanese (ja)
Inventor
Nobuhisa Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12718780A priority Critical patent/JPS5752163A/en
Publication of JPS5752163A publication Critical patent/JPS5752163A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To increase the Hfe of a lateral type bipolar transistor and to improve the noise characteristics of the transistor by forming the same conductive type high impurity concentration region as a base region on the surface of the base region surrounding an emitter region. CONSTITUTION:A lateral transistor formed with a high density region 15 added with the same conductive type impurity as a base region 14 is formed on the surface of the base region 14 surrounding an emitter region 11. At this time the injection of carrier to the base region 14 from the emitter region 11 does not occur in the boundary of a high density region 15, but occurs in the boundary of the base region in the deep region. Since the carrier injected from the emitter is conducted through the base region in the deep region to reach the collector region 12, the carrier is not affected by the influence of the boundary level of the surface of the semiconductor, but high Hfe can be obtained, thereby improving the noise characteristics.
JP12718780A 1980-09-16 1980-09-16 Lateral type bipolar transistor Pending JPS5752163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12718780A JPS5752163A (en) 1980-09-16 1980-09-16 Lateral type bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12718780A JPS5752163A (en) 1980-09-16 1980-09-16 Lateral type bipolar transistor

Publications (1)

Publication Number Publication Date
JPS5752163A true JPS5752163A (en) 1982-03-27

Family

ID=14953827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12718780A Pending JPS5752163A (en) 1980-09-16 1980-09-16 Lateral type bipolar transistor

Country Status (1)

Country Link
JP (1) JPS5752163A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573096A (en) * 1980-06-09 1982-01-08 Tokyo Shibaura Electric Co Atomic power plant

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573096A (en) * 1980-06-09 1982-01-08 Tokyo Shibaura Electric Co Atomic power plant
JPH0152720B2 (en) * 1980-06-09 1989-11-09 Toshiba Kk

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