JPS6481322A - Etching by ultraviolet laser beam - Google Patents

Etching by ultraviolet laser beam

Info

Publication number
JPS6481322A
JPS6481322A JP23945787A JP23945787A JPS6481322A JP S6481322 A JPS6481322 A JP S6481322A JP 23945787 A JP23945787 A JP 23945787A JP 23945787 A JP23945787 A JP 23945787A JP S6481322 A JPS6481322 A JP S6481322A
Authority
JP
Japan
Prior art keywords
laser beam
etched
etching
ultraviolet laser
clf3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23945787A
Other languages
Japanese (ja)
Inventor
Masataka Murahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Iwatani International Corp
Original Assignee
Central Glass Co Ltd
Iwatani International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd, Iwatani International Corp filed Critical Central Glass Co Ltd
Priority to JP23945787A priority Critical patent/JPS6481322A/en
Publication of JPS6481322A publication Critical patent/JPS6481322A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To form a fine pattern at a high speed without giving a plasma damage to a material to be etched by etching the material to be etched with a product of ClF3 which has been photolyzed by irradiating an ultraviolet laser beam. CONSTITUTION:By irradiating a light, or an excimer laser for multiphoton absorption, having an energy which is equal to or greater than a bond dissociation energy of molecules composing a material to be etched, the molecules composing the material to be etched are excited to react on ClF3. In order to proceed with this etching more effectively, an ultraviolet laser beam is irradiated simultaneously to photolyze ClF3, which is an etching gas. This reaction, being proceeded only with the irradiation of the ultraviolet laser beam, can completely prevent heat-induced damage as well as ion collision generated damage. Furthermore, because the reaction product is only that which is gaseous, the reaction chamber is completely free from any contamination.
JP23945787A 1987-09-24 1987-09-24 Etching by ultraviolet laser beam Pending JPS6481322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23945787A JPS6481322A (en) 1987-09-24 1987-09-24 Etching by ultraviolet laser beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23945787A JPS6481322A (en) 1987-09-24 1987-09-24 Etching by ultraviolet laser beam

Publications (1)

Publication Number Publication Date
JPS6481322A true JPS6481322A (en) 1989-03-27

Family

ID=17045049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23945787A Pending JPS6481322A (en) 1987-09-24 1987-09-24 Etching by ultraviolet laser beam

Country Status (1)

Country Link
JP (1) JPS6481322A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164618A (en) * 1991-08-14 1992-11-17 Westinghouse Electric Corp. Superconducting gate array cells
CN113785190A (en) * 2019-11-27 2021-12-10 昭和电工株式会社 Method for measuring fluorine gas concentration in halogen-containing fluoride gas by ultraviolet spectroscopy

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164618A (en) * 1991-08-14 1992-11-17 Westinghouse Electric Corp. Superconducting gate array cells
CN113785190A (en) * 2019-11-27 2021-12-10 昭和电工株式会社 Method for measuring fluorine gas concentration in halogen-containing fluoride gas by ultraviolet spectroscopy

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