JPS6481322A - Etching by ultraviolet laser beam - Google Patents
Etching by ultraviolet laser beamInfo
- Publication number
- JPS6481322A JPS6481322A JP23945787A JP23945787A JPS6481322A JP S6481322 A JPS6481322 A JP S6481322A JP 23945787 A JP23945787 A JP 23945787A JP 23945787 A JP23945787 A JP 23945787A JP S6481322 A JPS6481322 A JP S6481322A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- etched
- etching
- ultraviolet laser
- clf3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To form a fine pattern at a high speed without giving a plasma damage to a material to be etched by etching the material to be etched with a product of ClF3 which has been photolyzed by irradiating an ultraviolet laser beam. CONSTITUTION:By irradiating a light, or an excimer laser for multiphoton absorption, having an energy which is equal to or greater than a bond dissociation energy of molecules composing a material to be etched, the molecules composing the material to be etched are excited to react on ClF3. In order to proceed with this etching more effectively, an ultraviolet laser beam is irradiated simultaneously to photolyze ClF3, which is an etching gas. This reaction, being proceeded only with the irradiation of the ultraviolet laser beam, can completely prevent heat-induced damage as well as ion collision generated damage. Furthermore, because the reaction product is only that which is gaseous, the reaction chamber is completely free from any contamination.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23945787A JPS6481322A (en) | 1987-09-24 | 1987-09-24 | Etching by ultraviolet laser beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23945787A JPS6481322A (en) | 1987-09-24 | 1987-09-24 | Etching by ultraviolet laser beam |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6481322A true JPS6481322A (en) | 1989-03-27 |
Family
ID=17045049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23945787A Pending JPS6481322A (en) | 1987-09-24 | 1987-09-24 | Etching by ultraviolet laser beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6481322A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5164618A (en) * | 1991-08-14 | 1992-11-17 | Westinghouse Electric Corp. | Superconducting gate array cells |
CN113785190A (en) * | 2019-11-27 | 2021-12-10 | 昭和电工株式会社 | Method for measuring fluorine gas concentration in halogen-containing fluoride gas by ultraviolet spectroscopy |
-
1987
- 1987-09-24 JP JP23945787A patent/JPS6481322A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5164618A (en) * | 1991-08-14 | 1992-11-17 | Westinghouse Electric Corp. | Superconducting gate array cells |
CN113785190A (en) * | 2019-11-27 | 2021-12-10 | 昭和电工株式会社 | Method for measuring fluorine gas concentration in halogen-containing fluoride gas by ultraviolet spectroscopy |
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