JPS57202732A - Fine pattern formation - Google Patents
Fine pattern formationInfo
- Publication number
- JPS57202732A JPS57202732A JP8779681A JP8779681A JPS57202732A JP S57202732 A JPS57202732 A JP S57202732A JP 8779681 A JP8779681 A JP 8779681A JP 8779681 A JP8779681 A JP 8779681A JP S57202732 A JPS57202732 A JP S57202732A
- Authority
- JP
- Japan
- Prior art keywords
- particle beams
- pattern
- fine pattern
- aimed
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007261 regionalization Effects 0.000 title 1
- 239000002245 particle Substances 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 125000001153 fluoro group Chemical group F* 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To apply etching to an irradiated place only by a method wherein a substrate is installed in specific gas atmosphere and extremely constricted energy beams are aimed at the substrate and radical and reactive ions are generated in plasma.
CONSTITUTION: When Si is installed in CF4 and charged particle beams are aimed at a desired place, the CF4 is dissociated into excited F atom or reactive ion F+ or the like and the irradiated place only is reacted and etched and the Si is physically etched by the collision of the charged particles as well. Therefore, a pattern can be formed by directly lithographing the pattern by the charged particle beams and a fine pattern can easily be formed by beam diameter. Laser, X-rays, ultraviolet rays can be used instead of charge particle beams.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8779681A JPS57202732A (en) | 1981-06-05 | 1981-06-05 | Fine pattern formation |
DE19823221004 DE3221004A1 (en) | 1981-06-05 | 1982-06-03 | Plasma etching process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8779681A JPS57202732A (en) | 1981-06-05 | 1981-06-05 | Fine pattern formation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57202732A true JPS57202732A (en) | 1982-12-11 |
Family
ID=13924936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8779681A Pending JPS57202732A (en) | 1981-06-05 | 1981-06-05 | Fine pattern formation |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS57202732A (en) |
DE (1) | DE3221004A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041229A (en) * | 1983-08-17 | 1985-03-04 | Fujitsu Ltd | Manufacture of semiconductor device and manufacturing equipment thereof |
JPS6065534A (en) * | 1983-09-20 | 1985-04-15 | Nec Corp | Forming method for pattern |
JPS60126836A (en) * | 1983-12-13 | 1985-07-06 | Matsushita Electric Ind Co Ltd | Dry etching method |
JPS613410A (en) * | 1984-06-18 | 1986-01-09 | Fujitsu Ltd | Dry etching method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR920004171B1 (en) * | 1984-07-11 | 1992-05-30 | 가부시기가이샤 히다찌세이사꾸쇼 | Dry etching apparatus |
DE3615361C2 (en) * | 1986-05-06 | 1994-09-01 | Santos Pereira Ribeiro Car Dos | Device for the surface treatment of workpieces |
-
1981
- 1981-06-05 JP JP8779681A patent/JPS57202732A/en active Pending
-
1982
- 1982-06-03 DE DE19823221004 patent/DE3221004A1/en not_active Withdrawn
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041229A (en) * | 1983-08-17 | 1985-03-04 | Fujitsu Ltd | Manufacture of semiconductor device and manufacturing equipment thereof |
JPH0478005B2 (en) * | 1983-08-17 | 1992-12-10 | Fujitsu Ltd | |
JPS6065534A (en) * | 1983-09-20 | 1985-04-15 | Nec Corp | Forming method for pattern |
JPS60126836A (en) * | 1983-12-13 | 1985-07-06 | Matsushita Electric Ind Co Ltd | Dry etching method |
JPS613410A (en) * | 1984-06-18 | 1986-01-09 | Fujitsu Ltd | Dry etching method |
Also Published As
Publication number | Publication date |
---|---|
DE3221004A1 (en) | 1982-12-23 |
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