JPS6481320A - Plasma processing device - Google Patents

Plasma processing device

Info

Publication number
JPS6481320A
JPS6481320A JP23723587A JP23723587A JPS6481320A JP S6481320 A JPS6481320 A JP S6481320A JP 23723587 A JP23723587 A JP 23723587A JP 23723587 A JP23723587 A JP 23723587A JP S6481320 A JPS6481320 A JP S6481320A
Authority
JP
Japan
Prior art keywords
middle electrodes
wafers
chamber
circumference
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23723587A
Other languages
Japanese (ja)
Inventor
Takashi Senbon
Maki Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP23723587A priority Critical patent/JPS6481320A/en
Publication of JPS6481320A publication Critical patent/JPS6481320A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To easily disconnect middle electrodes and enable setting of the position in accordance with a treated material by performing fixity of the plate-shaped middle electrodes positioned just above the treated material on the circumference of the middle electrodes extended out of a chamber. CONSTITUTION:Middle electrodes 16 is provided right above wafers 11 on a stage 12 which are spaced at fixed intervals and set in parallel with wafers 11. The circumference of the middle electrodes 16 is supported on the lower end edge of a chamber 3 and the upper surface of a device body 2 through seal material 17, its outside is extended out of the chamber 3, the middle electrodes 16 are fixed on the body 2 by screws 18 composed of electrically conductive materials in the neighborhood of the circumference end thereof. In a resist removing process of the wafers 11 the screws 18 do not because they are not exposed at high temperature in the treating space 8, and the disconnection of the middle electrodes 16 is easily performed. Further, if plural kinds of exchangeable middle electrodes different in diameter (m) of projected part 16a and a projected quantity l are prepared and exchanged in accordance with the diameter of the wafers 11 and treatment performance whenever occasion arises, the optimum position of the middle electrodes 16 in the chamber 3 is realized.
JP23723587A 1987-09-24 1987-09-24 Plasma processing device Pending JPS6481320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23723587A JPS6481320A (en) 1987-09-24 1987-09-24 Plasma processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23723587A JPS6481320A (en) 1987-09-24 1987-09-24 Plasma processing device

Publications (1)

Publication Number Publication Date
JPS6481320A true JPS6481320A (en) 1989-03-27

Family

ID=17012389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23723587A Pending JPS6481320A (en) 1987-09-24 1987-09-24 Plasma processing device

Country Status (1)

Country Link
JP (1) JPS6481320A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251091A (en) * 1998-03-02 1999-09-17 Foi:Kk Plasma generation device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251091A (en) * 1998-03-02 1999-09-17 Foi:Kk Plasma generation device

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