JPS6481320A - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPS6481320A JPS6481320A JP23723587A JP23723587A JPS6481320A JP S6481320 A JPS6481320 A JP S6481320A JP 23723587 A JP23723587 A JP 23723587A JP 23723587 A JP23723587 A JP 23723587A JP S6481320 A JPS6481320 A JP S6481320A
- Authority
- JP
- Japan
- Prior art keywords
- middle electrodes
- wafers
- chamber
- circumference
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To easily disconnect middle electrodes and enable setting of the position in accordance with a treated material by performing fixity of the plate-shaped middle electrodes positioned just above the treated material on the circumference of the middle electrodes extended out of a chamber. CONSTITUTION:Middle electrodes 16 is provided right above wafers 11 on a stage 12 which are spaced at fixed intervals and set in parallel with wafers 11. The circumference of the middle electrodes 16 is supported on the lower end edge of a chamber 3 and the upper surface of a device body 2 through seal material 17, its outside is extended out of the chamber 3, the middle electrodes 16 are fixed on the body 2 by screws 18 composed of electrically conductive materials in the neighborhood of the circumference end thereof. In a resist removing process of the wafers 11 the screws 18 do not because they are not exposed at high temperature in the treating space 8, and the disconnection of the middle electrodes 16 is easily performed. Further, if plural kinds of exchangeable middle electrodes different in diameter (m) of projected part 16a and a projected quantity l are prepared and exchanged in accordance with the diameter of the wafers 11 and treatment performance whenever occasion arises, the optimum position of the middle electrodes 16 in the chamber 3 is realized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23723587A JPS6481320A (en) | 1987-09-24 | 1987-09-24 | Plasma processing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23723587A JPS6481320A (en) | 1987-09-24 | 1987-09-24 | Plasma processing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6481320A true JPS6481320A (en) | 1989-03-27 |
Family
ID=17012389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23723587A Pending JPS6481320A (en) | 1987-09-24 | 1987-09-24 | Plasma processing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6481320A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11251091A (en) * | 1998-03-02 | 1999-09-17 | Foi:Kk | Plasma generation device |
-
1987
- 1987-09-24 JP JP23723587A patent/JPS6481320A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11251091A (en) * | 1998-03-02 | 1999-09-17 | Foi:Kk | Plasma generation device |
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