JPS6481265A - Schottky barrier diode device - Google Patents
Schottky barrier diode deviceInfo
- Publication number
- JPS6481265A JPS6481265A JP23775387A JP23775387A JPS6481265A JP S6481265 A JPS6481265 A JP S6481265A JP 23775387 A JP23775387 A JP 23775387A JP 23775387 A JP23775387 A JP 23775387A JP S6481265 A JPS6481265 A JP S6481265A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- layer
- sio2
- window
- react
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To increase a forward voltage without reducing an area by a method wherein a polycrystalline silicon layer, a silicide layer and an aluminum electrode layer are installed at a window part formed in an insulating layer on a semiconductor substrate and the polycrystalline silicon layer has a prescribed thickness in order to leave a part which does not react with a reaction with the silicide layer. CONSTITUTION:An oxide film (SiO2) 11 is first grown on a silicon substrate 10 in an atmosphere of oxygen; a window 12 for SBD use is opened in its one part. Then, undoped polysilicon 13 which is comparatively thick (3000-4000Angstrom ) is patterned so as to cover the SBD window 12. A process to pattern the polysilicon 13 is executed in such a way that aluminum does not react directly with single-crystal silicon or in such a way that the polysilicon is inserted between both during an ion implantation operation via the polysilicon 13; in this case, a thickness is about 500Angstrom ; while as compared with this, a particularly thick value (3000-4000Angstrom ) is selected. This is selected in order to leave a part of the polysilicon 13 which does not react finally when it is transformed into titanium silicide. After that, an oxide film (SiO2) 14 is formed on a whole face; in addition, an anisotropic etching operation is executed from above; HEPA SiO2 14a is formed at side walls of the polysilicon 13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23775387A JPS6481265A (en) | 1987-09-22 | 1987-09-22 | Schottky barrier diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23775387A JPS6481265A (en) | 1987-09-22 | 1987-09-22 | Schottky barrier diode device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6481265A true JPS6481265A (en) | 1989-03-27 |
Family
ID=17019953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23775387A Pending JPS6481265A (en) | 1987-09-22 | 1987-09-22 | Schottky barrier diode device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6481265A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105556679A (en) * | 2013-10-01 | 2016-05-04 | 威世通用半导体公司 | Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current |
-
1987
- 1987-09-22 JP JP23775387A patent/JPS6481265A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105556679A (en) * | 2013-10-01 | 2016-05-04 | 威世通用半导体公司 | Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current |
| JP2016536778A (en) * | 2013-10-01 | 2016-11-24 | ヴィシェイ ジェネラル セミコンダクター，エルエルシーＶｉｓｈａｙ Ｇｅｎｅｒａｌ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ，Ｌｌｃ | Zener diode with polysilicon layer with improved reverse surge capability and reduced leakage current |
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