JPS6480017A - Manufacture of semiconductor single crystal layer - Google Patents
Manufacture of semiconductor single crystal layerInfo
- Publication number
- JPS6480017A JPS6480017A JP23490387A JP23490387A JPS6480017A JP S6480017 A JPS6480017 A JP S6480017A JP 23490387 A JP23490387 A JP 23490387A JP 23490387 A JP23490387 A JP 23490387A JP S6480017 A JPS6480017 A JP S6480017A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin
- single crystal
- films
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To obtain a thin single crystal film 4000Angstrom or below in thickness on an insulating film by laminating a first thin semiconductor film, a thin insulating film and a second thin semiconductor film on an insulating substrate, annealing the first and second semiconductor films by irradiating with an energy beam to convert them into single crystals. CONSTITUTION:An insulating film 12, a first thin semiconductor film 13, a thin insulating film 14, a second thin semiconductor film 15 and a protective film 16 are sequentially deposited on a single crystal Si substrate 11. An electron beam 17 is irradiated from above the film 16 while scanning it, thereby simultaneously annealing the films 13, 15. After the films 13, 15 are converted into single crystals, the film 16 is removed, and the thin single crystal film 15' is further removed by chemically etching. Eventually, the film 14 is removed. Then, a thin single crystal film 13' 4000Angstrom in thickness is obtained on the film 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23490387A JPS6480017A (en) | 1987-09-21 | 1987-09-21 | Manufacture of semiconductor single crystal layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23490387A JPS6480017A (en) | 1987-09-21 | 1987-09-21 | Manufacture of semiconductor single crystal layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6480017A true JPS6480017A (en) | 1989-03-24 |
Family
ID=16978105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23490387A Pending JPS6480017A (en) | 1987-09-21 | 1987-09-21 | Manufacture of semiconductor single crystal layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6480017A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008235875A (en) * | 2007-02-23 | 2008-10-02 | Semiconductor Energy Lab Co Ltd | Method for preparing semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254910A (en) * | 1985-09-03 | 1987-03-10 | Sharp Corp | Manufacturing semiconductor device |
JPS6281709A (en) * | 1985-10-07 | 1987-04-15 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
-
1987
- 1987-09-21 JP JP23490387A patent/JPS6480017A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254910A (en) * | 1985-09-03 | 1987-03-10 | Sharp Corp | Manufacturing semiconductor device |
JPS6281709A (en) * | 1985-10-07 | 1987-04-15 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008235875A (en) * | 2007-02-23 | 2008-10-02 | Semiconductor Energy Lab Co Ltd | Method for preparing semiconductor device |
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