JPS6480017A - Manufacture of semiconductor single crystal layer - Google Patents

Manufacture of semiconductor single crystal layer

Info

Publication number
JPS6480017A
JPS6480017A JP23490387A JP23490387A JPS6480017A JP S6480017 A JPS6480017 A JP S6480017A JP 23490387 A JP23490387 A JP 23490387A JP 23490387 A JP23490387 A JP 23490387A JP S6480017 A JPS6480017 A JP S6480017A
Authority
JP
Japan
Prior art keywords
film
thin
single crystal
films
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23490387A
Other languages
Japanese (ja)
Inventor
Shigeru Kanbayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP23490387A priority Critical patent/JPS6480017A/en
Publication of JPS6480017A publication Critical patent/JPS6480017A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a thin single crystal film 4000Angstrom or below in thickness on an insulating film by laminating a first thin semiconductor film, a thin insulating film and a second thin semiconductor film on an insulating substrate, annealing the first and second semiconductor films by irradiating with an energy beam to convert them into single crystals. CONSTITUTION:An insulating film 12, a first thin semiconductor film 13, a thin insulating film 14, a second thin semiconductor film 15 and a protective film 16 are sequentially deposited on a single crystal Si substrate 11. An electron beam 17 is irradiated from above the film 16 while scanning it, thereby simultaneously annealing the films 13, 15. After the films 13, 15 are converted into single crystals, the film 16 is removed, and the thin single crystal film 15' is further removed by chemically etching. Eventually, the film 14 is removed. Then, a thin single crystal film 13' 4000Angstrom in thickness is obtained on the film 12.
JP23490387A 1987-09-21 1987-09-21 Manufacture of semiconductor single crystal layer Pending JPS6480017A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23490387A JPS6480017A (en) 1987-09-21 1987-09-21 Manufacture of semiconductor single crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23490387A JPS6480017A (en) 1987-09-21 1987-09-21 Manufacture of semiconductor single crystal layer

Publications (1)

Publication Number Publication Date
JPS6480017A true JPS6480017A (en) 1989-03-24

Family

ID=16978105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23490387A Pending JPS6480017A (en) 1987-09-21 1987-09-21 Manufacture of semiconductor single crystal layer

Country Status (1)

Country Link
JP (1) JPS6480017A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235875A (en) * 2007-02-23 2008-10-02 Semiconductor Energy Lab Co Ltd Method for preparing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254910A (en) * 1985-09-03 1987-03-10 Sharp Corp Manufacturing semiconductor device
JPS6281709A (en) * 1985-10-07 1987-04-15 Agency Of Ind Science & Technol Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254910A (en) * 1985-09-03 1987-03-10 Sharp Corp Manufacturing semiconductor device
JPS6281709A (en) * 1985-10-07 1987-04-15 Agency Of Ind Science & Technol Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235875A (en) * 2007-02-23 2008-10-02 Semiconductor Energy Lab Co Ltd Method for preparing semiconductor device

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