JPS6477936A - Reduction type x-ray lithographic device - Google Patents
Reduction type x-ray lithographic deviceInfo
- Publication number
- JPS6477936A JPS6477936A JP62235415A JP23541587A JPS6477936A JP S6477936 A JPS6477936 A JP S6477936A JP 62235415 A JP62235415 A JP 62235415A JP 23541587 A JP23541587 A JP 23541587A JP S6477936 A JPS6477936 A JP S6477936A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- reflecting
- rays
- pattern
- reflecting mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To reduce a mask pattern independently in the X and Y directions by using an asymmetric Bragg reflection phenomenon by a reflecting X-ray mask and a reflecting mirror reflecting X-rays in a desired wavelength acquired from a monochromator in the mutually orthogonal directions. CONSTITUTION:A desired pattern is drawn on an asymmetric Bragg reflecting Xray mask 6 reducing and reflecting X-rays in a desired wavelength obtained from a monochromator 5, through which only X-rays in the desired wavelength are passed, in the X direction by a material largely absorbing X-rays such as Au. The mask 6 consists of an asymmetric Bragg reflecting mask, and the size of the pattern drawn on the mask is several times as large as a final exposure pattern. A reflecting mirror 7 reducing and reflecting X-rays reflected by the mask 6 in the Y direction is formed from an asymmetric Bragg reflecting mirror for X-rays composed of a single crystal. A resist film exposed by X-rays acquired through the reflecting mirror 7 is applied on a substrate 8. The pattern on the mask 6 can be reduced independently in the X and Y directions by the reflecting mask 6 and the reflecting mirror 7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62235415A JPS6477936A (en) | 1987-09-18 | 1987-09-18 | Reduction type x-ray lithographic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62235415A JPS6477936A (en) | 1987-09-18 | 1987-09-18 | Reduction type x-ray lithographic device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477936A true JPS6477936A (en) | 1989-03-23 |
Family
ID=16985758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62235415A Pending JPS6477936A (en) | 1987-09-18 | 1987-09-18 | Reduction type x-ray lithographic device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477936A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5072950A (en) * | 1989-08-25 | 1991-12-17 | Seal Technology Systems | Valve stem assembly |
JP2009519593A (en) * | 2005-12-13 | 2009-05-14 | コミシリア ア レネルジ アトミック | Reflective photolithography mask and method of making the mask |
DE102019118113B4 (en) | 2018-07-06 | 2023-12-07 | Honda Motor Co., Ltd. | Internal combustion engine with starter in a recessed space |
-
1987
- 1987-09-18 JP JP62235415A patent/JPS6477936A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5072950A (en) * | 1989-08-25 | 1991-12-17 | Seal Technology Systems | Valve stem assembly |
JP2009519593A (en) * | 2005-12-13 | 2009-05-14 | コミシリア ア レネルジ アトミック | Reflective photolithography mask and method of making the mask |
DE102019118113B4 (en) | 2018-07-06 | 2023-12-07 | Honda Motor Co., Ltd. | Internal combustion engine with starter in a recessed space |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2052733A1 (en) | Ringfield lithography | |
US3982944A (en) | Antifoggant dispersion for color photographic materials | |
EP0055077A3 (en) | System for transferring a fine pattern onto a target | |
JPH04348020A (en) | Reflection-type x-ray exposure mask | |
JPS6477936A (en) | Reduction type x-ray lithographic device | |
KR950024026A (en) | Projection exposure equipment | |
JPS5595324A (en) | Manufacturing method of semiconductor device | |
KR960015792B1 (en) | Mask forming method for pattern of semiconductor device | |
JP2645347B2 (en) | Exposure mask for parallel X-ray | |
DE1623803B2 (en) | METHOD OF MANUFACTURING REFLECTION AND TRANSMISSION GRIDS | |
JPS5789221A (en) | Multiple mask | |
JPS5314568A (en) | Photolithography treatment system device | |
JP3205753B2 (en) | Pattern mask for photolithography | |
JPS60173551A (en) | Pattern transferring method by reflecting projection of light such as x rays or the like | |
JPS5645024A (en) | Lithography apparatus | |
JPH02207252A (en) | Photomask for pattern formation | |
JPH0359569B2 (en) | ||
KR970049060A (en) | Micro pattern formation method by multiple exposure | |
JPS647619A (en) | X-ray aligner | |
JPS5317076A (en) | Silicon mask for x-ray exposure and its production | |
JPS5329080A (en) | Electron beam exposure system | |
Babu et al. | Calculation of image profiles for contrast enhanced lithography | |
JPS5741637A (en) | Microstep tablet | |
JPH02125606A (en) | Mask for x-ray exposure | |
KR970030231A (en) | Halftone Phase Inversion Mask |