JPS6473769A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6473769A
JPS6473769A JP23130987A JP23130987A JPS6473769A JP S6473769 A JPS6473769 A JP S6473769A JP 23130987 A JP23130987 A JP 23130987A JP 23130987 A JP23130987 A JP 23130987A JP S6473769 A JPS6473769 A JP S6473769A
Authority
JP
Japan
Prior art keywords
drain
ion implantation
source
gate electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23130987A
Other languages
Japanese (ja)
Inventor
Yohei Ichikawa
Toshiki Yabu
Masanori Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP23130987A priority Critical patent/JPS6473769A/en
Publication of JPS6473769A publication Critical patent/JPS6473769A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form source and drain symmetrically and to produce light doped drain without producing side wall by performing ion implantation with a trapezoid gate electrode where the side surface slants from vertical position with respect to the substrate surface. CONSTITUTION:A poly Si film 3 is formed on a gate oxide film 2 of P-type Si substrate 1. A trapezoid poly Si gate electrode 3 where the side surface slants from the vertical direction of substrate by theta1=10 deg. is produced. Ion implantation is performed with the electrode 3 as a mask to produce N<+> source 4s and drain 4d. Ion implantation is performed with theta2=7 deg. to prevent channeling effect of impurities. Heat treatment is performed, the source and drain layers 4s and 4d which are symmetrical in reference to a gate electrode 3, and symmetrical property is obtained regardless of the direction of source and drain. Also, without producing side wall, a MOSFET in light dope drain(LDD) structure is obtained by one ion implantation.
JP23130987A 1987-09-16 1987-09-16 Manufacture of semiconductor device Pending JPS6473769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23130987A JPS6473769A (en) 1987-09-16 1987-09-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23130987A JPS6473769A (en) 1987-09-16 1987-09-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6473769A true JPS6473769A (en) 1989-03-20

Family

ID=16921605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23130987A Pending JPS6473769A (en) 1987-09-16 1987-09-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6473769A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02191340A (en) * 1988-10-24 1990-07-27 Mitsubishi Electric Corp Field effect semiconductor device and its manufacture
US5355006A (en) * 1991-09-09 1994-10-11 Sharp Kabushiki Kaisha Semiconductor memory device with source and drain limited to areas near the gate electrodes
WO2007017982A1 (en) * 2005-08-11 2007-02-15 Sharp Kabushiki Kaisha Circuit board, electronic device, and process for producing circuit board

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02191340A (en) * 1988-10-24 1990-07-27 Mitsubishi Electric Corp Field effect semiconductor device and its manufacture
US5355006A (en) * 1991-09-09 1994-10-11 Sharp Kabushiki Kaisha Semiconductor memory device with source and drain limited to areas near the gate electrodes
WO2007017982A1 (en) * 2005-08-11 2007-02-15 Sharp Kabushiki Kaisha Circuit board, electronic device, and process for producing circuit board
US8035103B2 (en) 2005-08-11 2011-10-11 Sharp Kabushiki Kaisha Circuit board, electronic device, and method for producing circuit board

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