JPS6473638A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6473638A
JPS6473638A JP23160187A JP23160187A JPS6473638A JP S6473638 A JPS6473638 A JP S6473638A JP 23160187 A JP23160187 A JP 23160187A JP 23160187 A JP23160187 A JP 23160187A JP S6473638 A JPS6473638 A JP S6473638A
Authority
JP
Japan
Prior art keywords
wiring
base
wiring layer
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23160187A
Other languages
Japanese (ja)
Inventor
Hajime Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23160187A priority Critical patent/JPS6473638A/en
Publication of JPS6473638A publication Critical patent/JPS6473638A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To reduce the electric resistance of a wiring layer by providing a semiconductor substrate, a wiring base on the substrate, and a wiring layer buried by forming the lower part in a wedge state in the base. CONSTITUTION:A groove 3 covered with a wiring layer 2 is formed in a base 1 of a wiring. If the layer 2 is grown, for example, by sputtering under the condition not depending upon the base azimuth and the thickness (t) of the wiring layer is t<d and t<g/2 with respect to the width (g) and the depth (d) of the groove, the sectional area S is increased by 2(d-t)t+pit<2>/2 (2d-0.4t)t adhered to its wall face when it is calculated by approximating the round position to a circumference, and the wiring resistance can be reduced by the increased amount.
JP23160187A 1987-09-14 1987-09-14 Semiconductor integrated circuit device Pending JPS6473638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23160187A JPS6473638A (en) 1987-09-14 1987-09-14 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23160187A JPS6473638A (en) 1987-09-14 1987-09-14 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6473638A true JPS6473638A (en) 1989-03-17

Family

ID=16926069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23160187A Pending JPS6473638A (en) 1987-09-14 1987-09-14 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6473638A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6817071B2 (en) * 1999-04-28 2004-11-16 Murata Manufacturing Co., Ltd. Method of manufacturing surface acoustic wave device having bump electrodes
JP2010153543A (en) * 2008-12-25 2010-07-08 Fujitsu Ltd Semiconductor device and method of manufacturing the same
JP2017109386A (en) * 2015-12-16 2017-06-22 エスアイアイ・プリンテック株式会社 Liquid spray head and liquid spray device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113445A (en) * 1983-11-24 1985-06-19 Nec Corp Manufacture of semiconductor element
JPS60214569A (en) * 1984-04-10 1985-10-26 Nec Corp Mos type semiconductor device
JPS62237746A (en) * 1986-04-08 1987-10-17 Agency Of Ind Science & Technol Semiconductor integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113445A (en) * 1983-11-24 1985-06-19 Nec Corp Manufacture of semiconductor element
JPS60214569A (en) * 1984-04-10 1985-10-26 Nec Corp Mos type semiconductor device
JPS62237746A (en) * 1986-04-08 1987-10-17 Agency Of Ind Science & Technol Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6817071B2 (en) * 1999-04-28 2004-11-16 Murata Manufacturing Co., Ltd. Method of manufacturing surface acoustic wave device having bump electrodes
JP2010153543A (en) * 2008-12-25 2010-07-08 Fujitsu Ltd Semiconductor device and method of manufacturing the same
JP2017109386A (en) * 2015-12-16 2017-06-22 エスアイアイ・プリンテック株式会社 Liquid spray head and liquid spray device

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