JPS647124A - Coordinate input device - Google Patents

Coordinate input device

Info

Publication number
JPS647124A
JPS647124A JP16257487A JP16257487A JPS647124A JP S647124 A JPS647124 A JP S647124A JP 16257487 A JP16257487 A JP 16257487A JP 16257487 A JP16257487 A JP 16257487A JP S647124 A JPS647124 A JP S647124A
Authority
JP
Japan
Prior art keywords
nucleus
single crystal
nucleus forming
forming face
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16257487A
Other languages
Japanese (ja)
Inventor
Noriyuki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP16257487A priority Critical patent/JPS647124A/en
Publication of JPS647124A publication Critical patent/JPS647124A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To miniaturize a device by using the technique, where a nucleus forming face and a non-nucleus forming face are formed on a substrate to selectively grow semiconductor single crystal, to directly produce a coordinate detecting circuit on an oscillation transmission plate. CONSTITUTION:A non-nucleus forming face 20 having a low nucleus forming density is formed on a glassy oscillation transmission plate 1, and a nucleus forming face 21 having a high nucleus forming density is thinly accumulated. A single nucleus consisting of thin film materials is formed only on the nucleus forming face 21 on a proper accumulation condition. According as accumulation continues, the nucleus grows while keeping the single crystal structure to become insular single crystal 22. The surface is flattened by etching or grinding, and an intergranular part 23 is removed to form a single crystal thin film 24 into a lattice. The known semiconductor element forming technique is used to form elements like transistors on the single crystal thin film 24 and elements are connected by a patter consisting of Al or the like to produce a desired electronic circuit.
JP16257487A 1987-06-30 1987-06-30 Coordinate input device Pending JPS647124A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16257487A JPS647124A (en) 1987-06-30 1987-06-30 Coordinate input device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16257487A JPS647124A (en) 1987-06-30 1987-06-30 Coordinate input device

Publications (1)

Publication Number Publication Date
JPS647124A true JPS647124A (en) 1989-01-11

Family

ID=15757174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16257487A Pending JPS647124A (en) 1987-06-30 1987-06-30 Coordinate input device

Country Status (1)

Country Link
JP (1) JPS647124A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05140636A (en) * 1991-11-18 1993-06-08 Fuji Denshi Kogyo Kk High-frequency quenching method of shaft-like work
JP2012078352A (en) * 2010-09-10 2012-04-19 Sinfonia Technology Co Ltd Automobile noise testing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05140636A (en) * 1991-11-18 1993-06-08 Fuji Denshi Kogyo Kk High-frequency quenching method of shaft-like work
JP2012078352A (en) * 2010-09-10 2012-04-19 Sinfonia Technology Co Ltd Automobile noise testing apparatus

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