JPS6469087A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6469087A JPS6469087A JP22725087A JP22725087A JPS6469087A JP S6469087 A JPS6469087 A JP S6469087A JP 22725087 A JP22725087 A JP 22725087A JP 22725087 A JP22725087 A JP 22725087A JP S6469087 A JPS6469087 A JP S6469087A
- Authority
- JP
- Japan
- Prior art keywords
- inp
- layer
- thin film
- current
- multilayer thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To reduce the current leak in a current blocking layer, and realize high efficiency and large output, by forming a multilayer thin film of P-InP and N-InP which is positioned on both sides of an active layer formed in the trench of a semiconductor substrate surface. CONSTITUTION:On one surface of a P-InP substrate 1, a P-InP buffer layer 2 and a multilayer thin film 3 of P-InP and N-InP are crystal-grown. By etching this multilayer thin film G from the surface side, a trench is formed, in which a P-InP buffer layer (clad layer) 4 is crystal-grown, and thereon an InGaAsP active layer 6 is crystal-grown. An N-InP clad layer 6 is crystal-grown on the InGaAsP active layer 5 and the surface of the multilayer thin film 3 in which the trench is not formed. In a PBC laser formed in this manner, the multilayer thin film 3 operates as a current blocking layer, and current is injected from the P-InP buffer layer 4 to the active layer 5. A path of the leak current formed in the multilayer current blocking layer G has a small sectional area, and the resistance is large, so that the leak current is reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22725087A JPS6469087A (en) | 1987-09-10 | 1987-09-10 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22725087A JPS6469087A (en) | 1987-09-10 | 1987-09-10 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6469087A true JPS6469087A (en) | 1989-03-15 |
Family
ID=16857871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22725087A Pending JPS6469087A (en) | 1987-09-10 | 1987-09-10 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6469087A (en) |
-
1987
- 1987-09-10 JP JP22725087A patent/JPS6469087A/en active Pending
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