JPS6469087A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6469087A
JPS6469087A JP22725087A JP22725087A JPS6469087A JP S6469087 A JPS6469087 A JP S6469087A JP 22725087 A JP22725087 A JP 22725087A JP 22725087 A JP22725087 A JP 22725087A JP S6469087 A JPS6469087 A JP S6469087A
Authority
JP
Japan
Prior art keywords
inp
layer
thin film
current
multilayer thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22725087A
Other languages
Japanese (ja)
Inventor
Yoshinobu Omae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP22725087A priority Critical patent/JPS6469087A/en
Publication of JPS6469087A publication Critical patent/JPS6469087A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce the current leak in a current blocking layer, and realize high efficiency and large output, by forming a multilayer thin film of P-InP and N-InP which is positioned on both sides of an active layer formed in the trench of a semiconductor substrate surface. CONSTITUTION:On one surface of a P-InP substrate 1, a P-InP buffer layer 2 and a multilayer thin film 3 of P-InP and N-InP are crystal-grown. By etching this multilayer thin film G from the surface side, a trench is formed, in which a P-InP buffer layer (clad layer) 4 is crystal-grown, and thereon an InGaAsP active layer 6 is crystal-grown. An N-InP clad layer 6 is crystal-grown on the InGaAsP active layer 5 and the surface of the multilayer thin film 3 in which the trench is not formed. In a PBC laser formed in this manner, the multilayer thin film 3 operates as a current blocking layer, and current is injected from the P-InP buffer layer 4 to the active layer 5. A path of the leak current formed in the multilayer current blocking layer G has a small sectional area, and the resistance is large, so that the leak current is reduced.
JP22725087A 1987-09-10 1987-09-10 Semiconductor laser Pending JPS6469087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22725087A JPS6469087A (en) 1987-09-10 1987-09-10 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22725087A JPS6469087A (en) 1987-09-10 1987-09-10 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6469087A true JPS6469087A (en) 1989-03-15

Family

ID=16857871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22725087A Pending JPS6469087A (en) 1987-09-10 1987-09-10 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6469087A (en)

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