JPS6465864A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6465864A
JPS6465864A JP22251987A JP22251987A JPS6465864A JP S6465864 A JPS6465864 A JP S6465864A JP 22251987 A JP22251987 A JP 22251987A JP 22251987 A JP22251987 A JP 22251987A JP S6465864 A JPS6465864 A JP S6465864A
Authority
JP
Japan
Prior art keywords
bus
supply bus
bypass capacitor
power source
line width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22251987A
Other languages
Japanese (ja)
Inventor
Masao Hamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP22251987A priority Critical patent/JPS6465864A/en
Publication of JPS6465864A publication Critical patent/JPS6465864A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To improve a device of this design in a noise resistant property and make a bus reduce in a line width so as to decrease the area by a method wherein a bypass capacitor is provided just under a power sourceground supply bus in such a range that does not exceed the width of the bus. CONSTITUTION:Conductive materials 10i and 10j covered with an insulator 14 are provided just under a power source supply bus 4c and a ground supply bus 5c and connected with the buses through through-holes 11a and 11b respectively. Moreover, these are formed smaller than the line width of the bus provided to the space where functional element is not to be formed. Besides being locally provided in such an arrangement as mentioned above, a bypass capacitor functions effectively as well even if it is provided to the whole face of the power source-ground supply bus or it is formed taking advantage of an input capacitance of a transistor or the like, so that a noise resistant property can be improved and a occupying area can be reduced through the bypass capacitor provided or formed in the above mentioned manner.
JP22251987A 1987-09-04 1987-09-04 Semiconductor integrated circuit device Pending JPS6465864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22251987A JPS6465864A (en) 1987-09-04 1987-09-04 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22251987A JPS6465864A (en) 1987-09-04 1987-09-04 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6465864A true JPS6465864A (en) 1989-03-13

Family

ID=16783700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22251987A Pending JPS6465864A (en) 1987-09-04 1987-09-04 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6465864A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0644594A1 (en) * 1993-09-13 1995-03-22 Nec Corporation Power supply wiring for semiconductor device
EP0654906A2 (en) * 1993-11-24 1995-05-24 Nec Corporation Semiconductor device comprising a grounding pad near a reference signal pad and a capacitor between the pads

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61218155A (en) * 1985-03-25 1986-09-27 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61218155A (en) * 1985-03-25 1986-09-27 Hitachi Ltd Semiconductor integrated circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0644594A1 (en) * 1993-09-13 1995-03-22 Nec Corporation Power supply wiring for semiconductor device
US5598029A (en) * 1993-09-13 1997-01-28 Nec Corporation Power supply wiring for semiconductor device
EP0654906A2 (en) * 1993-11-24 1995-05-24 Nec Corporation Semiconductor device comprising a grounding pad near a reference signal pad and a capacitor between the pads
EP0654906A3 (en) * 1993-11-24 1996-02-14 Nec Corp Semiconductor device comprising a grounding pad near a reference signal pad and a capacitor between the pads.

Similar Documents

Publication Publication Date Title
MY107475A (en) Semiconductor device and method for producing the same.
RU92004412A (en) ANTENNA DEVICE
JPS6437032A (en) Bendable lead frame assembly of integrated circuit and integrated circuit package
DE68929486D1 (en) Integrated semiconductor circuit arrangement with conductor layers
SG43393G (en) Semiconductor integrated circuit device with built-in memories
MY108878A (en) Device separation structure and semiconductor device improved in wiring structure.
DE68917398D1 (en) Integrated circuit semiconductor arrangement with improved device for feed lines.
FR2597262B1 (en) INTEGRATED SEMICONDUCTOR CIRCUIT WITH BYPASS CAPACITOR ASSOCIATED WITH ITS WIRING
DE3583113D1 (en) INTEGRATED SEMICONDUCTOR CIRCUIT ARRANGEMENT IN POLYCELL TECHNOLOGY.
GB2154086B (en) Semiconductor integrated circuit device with power consumption reducing arrangement
JPS6465864A (en) Semiconductor integrated circuit device
EP0234269A3 (en) High voltage semiconductor integrated circuit
KR970008785B1 (en) Semiconductor integrated circuit having delay circuit with voltage-to-delay charcteristics proportonal to power voltage level
DE3474485D1 (en) Semiconductor integrated circuit with gate-array arrangement
JPS5553440A (en) Large-scale integrated circuit
JPS5662354A (en) Hybrid type semiconductor integrated circuit device
JPS648657A (en) Supplementary semiconductor integrated circuit device
JPS6465863A (en) Semiconductor integrated circuit device
EP0347853A3 (en) Semiconductor integrated circuit
KR890007404A (en) Multilayer wiring integrated semiconductor circuit
JPS56118353A (en) Semiconductor integrated circuit device
JPS57203334A (en) Semiconductor integrated circuit device
JPS54114981A (en) Zener semiconductor device
JPS57162356A (en) Integrated circuit device
JPS54158806A (en) Sensitivity change-over unit