JPS6459938A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6459938A
JPS6459938A JP62217384A JP21738487A JPS6459938A JP S6459938 A JPS6459938 A JP S6459938A JP 62217384 A JP62217384 A JP 62217384A JP 21738487 A JP21738487 A JP 21738487A JP S6459938 A JPS6459938 A JP S6459938A
Authority
JP
Japan
Prior art keywords
copper
film
alloy film
diffused
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62217384A
Other languages
Japanese (ja)
Inventor
Kazuhiro Hoshino
Minoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62217384A priority Critical patent/JPS6459938A/en
Priority to DE8787308090T priority patent/DE3784605T2/en
Priority to EP87308090A priority patent/EP0260906B1/en
Priority to KR1019870010234A priority patent/KR900007147B1/en
Publication of JPS6459938A publication Critical patent/JPS6459938A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To improve the oxidation resistance of a Cu-containing alloy film and to prevent Cu from diffusing in an Si substrate and an insulating film by a method wherein the copper-containing alloy film is adhered on a barrier metallic layer in which copper is diffused and the patterned alloy film is annealed in a nitrogen-containing atmosphere. CONSTITUTION:An alloy film 14 provided on a copper diffused barrier metallic layer 12 is patterned into a desired wiring pattern. By annealing (heat treatment) this in a nitrogen-containing atmosphere, a substance which makes an alloy with copper is diffused on the surfaces (upper surface and side surfaces) of the copper alloy film to couple with nitrogen in the atmosphere. By this reaction, the copper gradually becomes a purer and at the same time, a nitride 16 is formed on the surface of the film 14. This silicide film acts as a barrier against the oxidation of a copper wiring 18. Moreover, as the copper alloy film is provided on the diffused barrier metallic film, Cu can be prevented from diffusing in an insulating film 10 and an Si substrate.
JP62217384A 1986-09-17 1987-08-31 Manufacture of semiconductor device Pending JPS6459938A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62217384A JPS6459938A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor device
DE8787308090T DE3784605T2 (en) 1986-09-17 1987-09-14 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE.
EP87308090A EP0260906B1 (en) 1986-09-17 1987-09-14 Method of producing semiconductor device and semiconductor device
KR1019870010234A KR900007147B1 (en) 1986-09-17 1987-09-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62217384A JPS6459938A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6459938A true JPS6459938A (en) 1989-03-07

Family

ID=16703330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62217384A Pending JPS6459938A (en) 1986-09-17 1987-08-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6459938A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03196619A (en) * 1989-12-26 1991-08-28 Nippon Mining Co Ltd Formation of copper wire and target used therefor
JPH03196620A (en) * 1989-12-26 1991-08-28 Nippon Mining Co Ltd Formation of copper wiring and target used therefor
JPH0495562A (en) * 1990-08-10 1992-03-27 Sasajima Chiyuushiyajiyou Kk High-speed electric railcar
DE4400200A1 (en) * 1993-01-05 1994-07-07 Toshiba Kawasaki Kk Semiconductor device with improved wiring structure
JPH08306694A (en) * 1995-04-01 1996-11-22 Lg Semicon Co Ltd Wiring structure of semiconductor and its preparation
KR100421826B1 (en) * 2000-01-21 2004-03-10 샤프 가부시키가이샤 Semiconductor device and its production process
KR100953340B1 (en) * 2007-12-27 2010-04-20 주식회사 동부하이텍 Method for forming a metal line in semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03196619A (en) * 1989-12-26 1991-08-28 Nippon Mining Co Ltd Formation of copper wire and target used therefor
JPH03196620A (en) * 1989-12-26 1991-08-28 Nippon Mining Co Ltd Formation of copper wiring and target used therefor
JPH0495562A (en) * 1990-08-10 1992-03-27 Sasajima Chiyuushiyajiyou Kk High-speed electric railcar
DE4400200A1 (en) * 1993-01-05 1994-07-07 Toshiba Kawasaki Kk Semiconductor device with improved wiring structure
JPH08306694A (en) * 1995-04-01 1996-11-22 Lg Semicon Co Ltd Wiring structure of semiconductor and its preparation
KR100421826B1 (en) * 2000-01-21 2004-03-10 샤프 가부시키가이샤 Semiconductor device and its production process
KR100953340B1 (en) * 2007-12-27 2010-04-20 주식회사 동부하이텍 Method for forming a metal line in semiconductor device

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