JPS6459938A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6459938A JPS6459938A JP62217384A JP21738487A JPS6459938A JP S6459938 A JPS6459938 A JP S6459938A JP 62217384 A JP62217384 A JP 62217384A JP 21738487 A JP21738487 A JP 21738487A JP S6459938 A JPS6459938 A JP S6459938A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- film
- alloy film
- diffused
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To improve the oxidation resistance of a Cu-containing alloy film and to prevent Cu from diffusing in an Si substrate and an insulating film by a method wherein the copper-containing alloy film is adhered on a barrier metallic layer in which copper is diffused and the patterned alloy film is annealed in a nitrogen-containing atmosphere. CONSTITUTION:An alloy film 14 provided on a copper diffused barrier metallic layer 12 is patterned into a desired wiring pattern. By annealing (heat treatment) this in a nitrogen-containing atmosphere, a substance which makes an alloy with copper is diffused on the surfaces (upper surface and side surfaces) of the copper alloy film to couple with nitrogen in the atmosphere. By this reaction, the copper gradually becomes a purer and at the same time, a nitride 16 is formed on the surface of the film 14. This silicide film acts as a barrier against the oxidation of a copper wiring 18. Moreover, as the copper alloy film is provided on the diffused barrier metallic film, Cu can be prevented from diffusing in an insulating film 10 and an Si substrate.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62217384A JPS6459938A (en) | 1987-08-31 | 1987-08-31 | Manufacture of semiconductor device |
DE8787308090T DE3784605T2 (en) | 1986-09-17 | 1987-09-14 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE. |
EP87308090A EP0260906B1 (en) | 1986-09-17 | 1987-09-14 | Method of producing semiconductor device and semiconductor device |
KR1019870010234A KR900007147B1 (en) | 1986-09-17 | 1987-09-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62217384A JPS6459938A (en) | 1987-08-31 | 1987-08-31 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459938A true JPS6459938A (en) | 1989-03-07 |
Family
ID=16703330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62217384A Pending JPS6459938A (en) | 1986-09-17 | 1987-08-31 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459938A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03196619A (en) * | 1989-12-26 | 1991-08-28 | Nippon Mining Co Ltd | Formation of copper wire and target used therefor |
JPH03196620A (en) * | 1989-12-26 | 1991-08-28 | Nippon Mining Co Ltd | Formation of copper wiring and target used therefor |
JPH0495562A (en) * | 1990-08-10 | 1992-03-27 | Sasajima Chiyuushiyajiyou Kk | High-speed electric railcar |
DE4400200A1 (en) * | 1993-01-05 | 1994-07-07 | Toshiba Kawasaki Kk | Semiconductor device with improved wiring structure |
JPH08306694A (en) * | 1995-04-01 | 1996-11-22 | Lg Semicon Co Ltd | Wiring structure of semiconductor and its preparation |
KR100421826B1 (en) * | 2000-01-21 | 2004-03-10 | 샤프 가부시키가이샤 | Semiconductor device and its production process |
KR100953340B1 (en) * | 2007-12-27 | 2010-04-20 | 주식회사 동부하이텍 | Method for forming a metal line in semiconductor device |
-
1987
- 1987-08-31 JP JP62217384A patent/JPS6459938A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03196619A (en) * | 1989-12-26 | 1991-08-28 | Nippon Mining Co Ltd | Formation of copper wire and target used therefor |
JPH03196620A (en) * | 1989-12-26 | 1991-08-28 | Nippon Mining Co Ltd | Formation of copper wiring and target used therefor |
JPH0495562A (en) * | 1990-08-10 | 1992-03-27 | Sasajima Chiyuushiyajiyou Kk | High-speed electric railcar |
DE4400200A1 (en) * | 1993-01-05 | 1994-07-07 | Toshiba Kawasaki Kk | Semiconductor device with improved wiring structure |
JPH08306694A (en) * | 1995-04-01 | 1996-11-22 | Lg Semicon Co Ltd | Wiring structure of semiconductor and its preparation |
KR100421826B1 (en) * | 2000-01-21 | 2004-03-10 | 샤프 가부시키가이샤 | Semiconductor device and its production process |
KR100953340B1 (en) * | 2007-12-27 | 2010-04-20 | 주식회사 동부하이텍 | Method for forming a metal line in semiconductor device |
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