DE3784605T2 - METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE. - Google Patents
METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE.Info
- Publication number
- DE3784605T2 DE3784605T2 DE8787308090T DE3784605T DE3784605T2 DE 3784605 T2 DE3784605 T2 DE 3784605T2 DE 8787308090 T DE8787308090 T DE 8787308090T DE 3784605 T DE3784605 T DE 3784605T DE 3784605 T2 DE3784605 T2 DE 3784605T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- producing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61218320A JPS6373645A (en) | 1986-09-17 | 1986-09-17 | Semiconductor device |
JP62217384A JPS6459938A (en) | 1987-08-31 | 1987-08-31 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3784605D1 DE3784605D1 (en) | 1993-04-15 |
DE3784605T2 true DE3784605T2 (en) | 1993-06-17 |
Family
ID=26521990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787308090T Expired - Fee Related DE3784605T2 (en) | 1986-09-17 | 1987-09-14 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0260906B1 (en) |
KR (1) | KR900007147B1 (en) |
DE (1) | DE3784605T2 (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2511289B2 (en) * | 1988-03-30 | 1996-06-26 | 株式会社日立製作所 | Semiconductor device |
JP2839579B2 (en) * | 1989-10-02 | 1998-12-16 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
JPH03254137A (en) * | 1990-03-05 | 1991-11-13 | Toshiba Corp | Semiconductor integrated circuit device |
KR920017186A (en) * | 1991-02-28 | 1992-09-26 | 원본미기재 | Conductive Structure of Integrated Circuit |
JP3191407B2 (en) * | 1991-08-29 | 2001-07-23 | ソニー株式会社 | Wiring formation method |
TW215132B (en) * | 1992-09-21 | 1993-10-21 | Advanced Micro Devices Inc | Method and apparatus for the elimination of metal voids and metal lines of a semiconductor device |
US6380627B1 (en) * | 1998-06-26 | 2002-04-30 | The Regents Of The University Of California | Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication |
JP4247772B2 (en) | 1998-12-14 | 2009-04-02 | エルジー ディスプレイ カンパニー リミテッド | Wiring, thin film transistor substrate using the same, manufacturing method thereof, and liquid crystal display device |
US7061111B2 (en) | 2000-04-11 | 2006-06-13 | Micron Technology, Inc. | Interconnect structure for use in an integrated circuit |
JP4350337B2 (en) * | 2001-04-27 | 2009-10-21 | 富士通マイクロエレクトロニクス株式会社 | Semiconductor device |
EP1471164B1 (en) * | 2002-01-30 | 2013-01-23 | JX Nippon Mining & Metals Corporation | Copper alloy sputtering target and method for manufacturing the target |
KR20040034939A (en) * | 2002-10-17 | 2004-04-29 | 학교법인 국민학원 | Cu Alloy Wiring Having Reliable Diffusion Barrier and Method for Making the Same |
KR100897505B1 (en) * | 2002-11-19 | 2009-05-15 | 삼성전자주식회사 | Thin Film Transistor Of Liquid Crystal Display Device And Method Of Manufacturing The Same |
JP4794802B2 (en) | 2002-11-21 | 2011-10-19 | Jx日鉱日石金属株式会社 | Copper alloy sputtering target and semiconductor device wiring |
US7615495B2 (en) | 2005-11-17 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
KR100953340B1 (en) * | 2007-12-27 | 2010-04-20 | 주식회사 동부하이텍 | Method for forming a metal line in semiconductor device |
US20130207111A1 (en) | 2012-02-09 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device |
US10263114B2 (en) | 2016-03-04 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53116089A (en) * | 1977-03-22 | 1978-10-11 | Hitachi Ltd | Wiring constituent body |
US4429011A (en) * | 1982-03-29 | 1984-01-31 | General Electric Company | Composite conductive structures and method of making same |
US4489482A (en) * | 1983-06-06 | 1984-12-25 | Fairchild Camera & Instrument Corp. | Impregnation of aluminum interconnects with copper |
-
1987
- 1987-09-14 EP EP87308090A patent/EP0260906B1/en not_active Expired - Lifetime
- 1987-09-14 DE DE8787308090T patent/DE3784605T2/en not_active Expired - Fee Related
- 1987-09-16 KR KR1019870010234A patent/KR900007147B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR890004398A (en) | 1989-04-21 |
EP0260906B1 (en) | 1993-03-10 |
EP0260906A2 (en) | 1988-03-23 |
DE3784605D1 (en) | 1993-04-15 |
KR900007147B1 (en) | 1990-09-29 |
EP0260906A3 (en) | 1989-01-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |