JPS6459750A - Defect inspection and correction device for electron beam pattern - Google Patents
Defect inspection and correction device for electron beam patternInfo
- Publication number
- JPS6459750A JPS6459750A JP62215916A JP21591687A JPS6459750A JP S6459750 A JPS6459750 A JP S6459750A JP 62215916 A JP62215916 A JP 62215916A JP 21591687 A JP21591687 A JP 21591687A JP S6459750 A JPS6459750 A JP S6459750A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- correction
- electron beam
- irradiation
- ultraviolet rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007689 inspection Methods 0.000 title abstract 4
- 238000010894 electron beam technology Methods 0.000 title abstract 3
- 230000007547 defect Effects 0.000 title 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
Landscapes
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
PURPOSE:To enable the high-precision inspection of a pattern and the correction of high throughput by controlling the temperature of an inspected sample and exciting a gas for correction via the irradiation of far ultraviolet rays having the predetermined intensity. CONSTITUTION:A sample 27 is compared with a reference pattern formed via a pattern generation part 40 by the irradiation of an electron beam 9, and the defective part thereof is detected and corrected. Far ultraviolet rays generated by a lamp 36 are irradiated upon the sample 27 via a light guide wave passage 35. A sample stage 23 is subjected to a temperature fluctuation via a temperature control part 26 and a stage heating/cooling part 25, and the sample is thereby kept at a temperature adequate for inspection and correction. A gas having specific characteristics is supplied from a gas supply source to the sample 27 via a gas flow controller 33 and excited up to a point immediate before the decomposition reaction thereof, using the irradiation of the far ultraviolet rays. According to the aforesaid system, highprecision inspection and high throughput correction are made with an electron beam.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62215916A JPH0679470B2 (en) | 1987-08-28 | 1987-08-28 | Electronic beam pattern defect inspection and repair device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62215916A JPH0679470B2 (en) | 1987-08-28 | 1987-08-28 | Electronic beam pattern defect inspection and repair device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6459750A true JPS6459750A (en) | 1989-03-07 |
JPH0679470B2 JPH0679470B2 (en) | 1994-10-05 |
Family
ID=16680377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62215916A Expired - Lifetime JPH0679470B2 (en) | 1987-08-28 | 1987-08-28 | Electronic beam pattern defect inspection and repair device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0679470B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10185847A (en) * | 1996-12-25 | 1998-07-14 | Hitachi Ltd | Pattern inspecting device, and method and device for inspecting pattern with electron beam |
JPH10318950A (en) * | 1997-05-21 | 1998-12-04 | Hitachi Ltd | Method and apparatus for inspection of pattern |
JP2003123682A (en) * | 2001-10-18 | 2003-04-25 | Hitachi High-Technologies Corp | Charged particle beam device |
EP1320117A2 (en) * | 2001-12-13 | 2003-06-18 | Sony International (Europe) GmbH | Method for defect and conductivity engineering of a conducting nanoscaled structure |
JP2003300200A (en) * | 2001-12-13 | 2003-10-21 | Sony Internatl Europ Gmbh | Engineering processing method of defect and electric conductivity of conductive nanoscale structure |
WO2018020649A1 (en) * | 2016-07-29 | 2018-02-01 | 株式会社日立ハイテクノロジーズ | Charged particle radiation device |
-
1987
- 1987-08-28 JP JP62215916A patent/JPH0679470B2/en not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10185847A (en) * | 1996-12-25 | 1998-07-14 | Hitachi Ltd | Pattern inspecting device, and method and device for inspecting pattern with electron beam |
JPH10318950A (en) * | 1997-05-21 | 1998-12-04 | Hitachi Ltd | Method and apparatus for inspection of pattern |
JP2003123682A (en) * | 2001-10-18 | 2003-04-25 | Hitachi High-Technologies Corp | Charged particle beam device |
EP1320117A2 (en) * | 2001-12-13 | 2003-06-18 | Sony International (Europe) GmbH | Method for defect and conductivity engineering of a conducting nanoscaled structure |
JP2003300200A (en) * | 2001-12-13 | 2003-10-21 | Sony Internatl Europ Gmbh | Engineering processing method of defect and electric conductivity of conductive nanoscale structure |
US6888150B2 (en) | 2001-12-13 | 2005-05-03 | Sony International (Europe) Gmbh | Method for defect and conductivity engineering of a conducting nanoscaled structure |
WO2018020649A1 (en) * | 2016-07-29 | 2018-02-01 | 株式会社日立ハイテクノロジーズ | Charged particle radiation device |
Also Published As
Publication number | Publication date |
---|---|
JPH0679470B2 (en) | 1994-10-05 |
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