JPS6459750A - Defect inspection and correction device for electron beam pattern - Google Patents

Defect inspection and correction device for electron beam pattern

Info

Publication number
JPS6459750A
JPS6459750A JP62215916A JP21591687A JPS6459750A JP S6459750 A JPS6459750 A JP S6459750A JP 62215916 A JP62215916 A JP 62215916A JP 21591687 A JP21591687 A JP 21591687A JP S6459750 A JPS6459750 A JP S6459750A
Authority
JP
Japan
Prior art keywords
sample
correction
electron beam
irradiation
ultraviolet rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62215916A
Other languages
Japanese (ja)
Other versions
JPH0679470B2 (en
Inventor
Susumu Takeuchi
Shigeki Sadahiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62215916A priority Critical patent/JPH0679470B2/en
Publication of JPS6459750A publication Critical patent/JPS6459750A/en
Publication of JPH0679470B2 publication Critical patent/JPH0679470B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To enable the high-precision inspection of a pattern and the correction of high throughput by controlling the temperature of an inspected sample and exciting a gas for correction via the irradiation of far ultraviolet rays having the predetermined intensity. CONSTITUTION:A sample 27 is compared with a reference pattern formed via a pattern generation part 40 by the irradiation of an electron beam 9, and the defective part thereof is detected and corrected. Far ultraviolet rays generated by a lamp 36 are irradiated upon the sample 27 via a light guide wave passage 35. A sample stage 23 is subjected to a temperature fluctuation via a temperature control part 26 and a stage heating/cooling part 25, and the sample is thereby kept at a temperature adequate for inspection and correction. A gas having specific characteristics is supplied from a gas supply source to the sample 27 via a gas flow controller 33 and excited up to a point immediate before the decomposition reaction thereof, using the irradiation of the far ultraviolet rays. According to the aforesaid system, highprecision inspection and high throughput correction are made with an electron beam.
JP62215916A 1987-08-28 1987-08-28 Electronic beam pattern defect inspection and repair device Expired - Lifetime JPH0679470B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62215916A JPH0679470B2 (en) 1987-08-28 1987-08-28 Electronic beam pattern defect inspection and repair device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62215916A JPH0679470B2 (en) 1987-08-28 1987-08-28 Electronic beam pattern defect inspection and repair device

Publications (2)

Publication Number Publication Date
JPS6459750A true JPS6459750A (en) 1989-03-07
JPH0679470B2 JPH0679470B2 (en) 1994-10-05

Family

ID=16680377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62215916A Expired - Lifetime JPH0679470B2 (en) 1987-08-28 1987-08-28 Electronic beam pattern defect inspection and repair device

Country Status (1)

Country Link
JP (1) JPH0679470B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10185847A (en) * 1996-12-25 1998-07-14 Hitachi Ltd Pattern inspecting device, and method and device for inspecting pattern with electron beam
JPH10318950A (en) * 1997-05-21 1998-12-04 Hitachi Ltd Method and apparatus for inspection of pattern
JP2003123682A (en) * 2001-10-18 2003-04-25 Hitachi High-Technologies Corp Charged particle beam device
EP1320117A2 (en) * 2001-12-13 2003-06-18 Sony International (Europe) GmbH Method for defect and conductivity engineering of a conducting nanoscaled structure
JP2003300200A (en) * 2001-12-13 2003-10-21 Sony Internatl Europ Gmbh Engineering processing method of defect and electric conductivity of conductive nanoscale structure
WO2018020649A1 (en) * 2016-07-29 2018-02-01 株式会社日立ハイテクノロジーズ Charged particle radiation device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10185847A (en) * 1996-12-25 1998-07-14 Hitachi Ltd Pattern inspecting device, and method and device for inspecting pattern with electron beam
JPH10318950A (en) * 1997-05-21 1998-12-04 Hitachi Ltd Method and apparatus for inspection of pattern
JP2003123682A (en) * 2001-10-18 2003-04-25 Hitachi High-Technologies Corp Charged particle beam device
EP1320117A2 (en) * 2001-12-13 2003-06-18 Sony International (Europe) GmbH Method for defect and conductivity engineering of a conducting nanoscaled structure
JP2003300200A (en) * 2001-12-13 2003-10-21 Sony Internatl Europ Gmbh Engineering processing method of defect and electric conductivity of conductive nanoscale structure
US6888150B2 (en) 2001-12-13 2005-05-03 Sony International (Europe) Gmbh Method for defect and conductivity engineering of a conducting nanoscaled structure
WO2018020649A1 (en) * 2016-07-29 2018-02-01 株式会社日立ハイテクノロジーズ Charged particle radiation device

Also Published As

Publication number Publication date
JPH0679470B2 (en) 1994-10-05

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