JPH0480760A - Illuminator - Google Patents
IlluminatorInfo
- Publication number
- JPH0480760A JPH0480760A JP19428490A JP19428490A JPH0480760A JP H0480760 A JPH0480760 A JP H0480760A JP 19428490 A JP19428490 A JP 19428490A JP 19428490 A JP19428490 A JP 19428490A JP H0480760 A JPH0480760 A JP H0480760A
- Authority
- JP
- Japan
- Prior art keywords
- lamp
- irradiation
- wafer
- irradiated
- louvers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005286 illumination Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000007781 pre-processing Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 125000001475 halogen functional group Chemical group 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体装置の製造工程におけるウェハへの光照射を行う
照射装置に関し、
ウェハへの光照射の不均一性を減少させ、短時間処理を
図ることを目的とし、
被照射物に所定波長の光を照射するランプを備えた照射
装置において、前記被照射物とランプとの間に、回動可
能な複数個のルーツ1を、該ランプの照射面の全域に所
定間隔て設けるように構成し、また、該ルーバはランプ
の照射中に揺動するように構成する。[Detailed Description of the Invention] [Summary] Regarding an irradiation device that irradiates light onto a wafer in the manufacturing process of semiconductor devices, the present invention aims to reduce non-uniformity of light irradiation onto the wafer and achieve short processing time. In an irradiation device equipped with a lamp that irradiates an object to be irradiated with light of a predetermined wavelength, a plurality of rotatable roots 1 are provided between the object to be irradiated and the lamp in a predetermined manner over the entire irradiation surface of the lamp. The louvers are configured to be spaced apart, and the louvers are configured to swing during irradiation with the lamp.
本発明は、半導体装置の製造工程におけるウェハへの光
照射を行う照射装置に関する。The present invention relates to an irradiation device that irradiates a wafer with light in a semiconductor device manufacturing process.
近年、半導体装置の製造工程において、ウエノλにレジ
スト塗布後にエツチングを行う場合、プラズマ等のドラ
イエツチングか行われてきている。In recent years, in the manufacturing process of semiconductor devices, when etching is performed after resist coating on wafer λ, dry etching using plasma or the like has been used.
この場合、レジストの耐プラズマ性を向上させるために
、エツチング工程前にウェハに紫外線を照射することか
行われており、均一かつ短時間の処理か要求されている
。In this case, in order to improve the plasma resistance of the resist, the wafer is irradiated with ultraviolet rays before the etching process, and uniform and short-time processing is required.
ウェハのエツチング前に紫外線を照射することは、ウェ
ハに塗布されたレジストか硬化し、プラズマ等に曝され
てもレジスト焦げのような現象か生しにくい。Irradiating the wafer with ultraviolet light before etching the wafer hardens the resist applied to the wafer, making it difficult to cause phenomena such as resist burning even when exposed to plasma or the like.
従来、ウェハに紫外線照射を行う場合、紫外線光を発す
る低圧水銀ランプを使用し、真空中のウェハに紫外線を
照射する。一般に上記水銀ランプ自体の照度ムラか約2
0%程度有することから、ある程度長い時間紫外線を照
射して、照射の不足部分の個所を補っていた。また、こ
のような紫外線をウェハに照射する場合、レジストの硬
化を促進させるために、予めウェハを加熱することか知
られている。Conventionally, when irradiating a wafer with ultraviolet light, a low-pressure mercury lamp that emits ultraviolet light is used to irradiate the wafer in a vacuum with ultraviolet light. Generally, the illumination intensity of the mercury lamp itself is about 2
Since the amount of UV radiation was around 0%, UV rays were irradiated for a certain length of time to compensate for the insufficient irradiation. Furthermore, when irradiating a wafer with such ultraviolet rays, it is known to heat the wafer in advance in order to accelerate hardening of the resist.
一方、紫外線照射に使用される水銀等のランプは、その
性質上、点灯、消灯を繰り返すと、ランプの寿命か短縮
することから、常時点灯させるのか一般的である。On the other hand, due to the nature of mercury lamps used for ultraviolet irradiation, repeated turning on and off shortens the life of the lamp, so it is common to leave them on all the time.
しかし、上記ランプの特性により、ウェハ全面に均一の
紫外線を照射することかできず、所定の処理時間以外に
も紫外線か照射される。また、ランプは常時点灯してい
ることから、ウェハか処理室内に搬送された時点より紫
外線に曝されることとなり、ウェハを加熱してから紫外
線を照射することかできないという問題かある。However, due to the characteristics of the lamp, it is not possible to uniformly irradiate the entire surface of the wafer with ultraviolet rays, and the wafer is irradiated with ultraviolet rays at times other than the predetermined processing time. Further, since the lamp is always on, the wafer is exposed to ultraviolet light from the moment it is transported into the processing chamber, and there is a problem in that the only way to irradiate the wafer with ultraviolet light is after heating the wafer.
そこで、本発明は上記課題に鑑みなされたもので、ウェ
ハへの光照射の不均一を現象させ、短時間処理を図る照
射装置を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide an irradiation device that reduces the non-uniformity of light irradiation onto a wafer and achieves short processing time.
第1図に本発明の原理説明図を示す。第1図における照
射装置1は、照明部2a内のランプ2は所定波長の光を
、処理部3内のステージ4上に載置される被照射物5に
照射する。そして、被照射物5とランプ2との間に、回
動可能な複数個のルーハロか該ランプ2の照射面の全域
に所定間隔て設けられる。FIG. 1 shows a diagram explaining the principle of the present invention. In the irradiation device 1 shown in FIG. 1, a lamp 2 in an illumination section 2a irradiates light of a predetermined wavelength onto an irradiated object 5 placed on a stage 4 in a processing section 3. Between the object to be irradiated 5 and the lamp 2, a plurality of rotatable loops are provided over the entire irradiation surface of the lamp 2 at predetermined intervals.
また、このルーバ6は、ランプ2の照射中に揺動する。Moreover, this louver 6 swings during irradiation with the lamp 2.
第1図に示すように、ルーバ6は被照射物5とランプ2
との間に設けられる。すなわち、被照射物5の出し入れ
時にはルーバ6か全閉となってランプ2の照射光を遮っ
ている。これにより、被照射物5の必要な場合にのみ照
射することて、被照射物5の前処理等を行うことか可能
となり、全体として短時間で処理を行うことか可能とな
る。As shown in FIG. 1, the louver 6 is connected to the irradiated object 5 and the lamp 2.
established between. That is, when the object 5 to be irradiated is taken out or put in, the louver 6 is fully closed to block the irradiation light from the lamp 2. This makes it possible to pre-process the irradiation object 5 by irradiating the irradiation object 5 only when necessary, and it becomes possible to perform the treatment in a short time as a whole.
また、ルーバ6は、ランプ2の照射中に揺動する。これ
により、ランプ2から照射される光路か常に変化し、ラ
ンプ2自体か有する照度ムラか被照射物5に反映されに
くくなり、被照射物5の全面て均一な照射か可能となる
。Further, the louver 6 swings during irradiation with the lamp 2. As a result, the optical path irradiated from the lamp 2 constantly changes, and uneven illuminance of the lamp 2 itself is less likely to be reflected on the object 5 to be irradiated, making it possible to uniformly irradiate the entire surface of the object 5 to be irradiated.
第2図に、本発明の一実施例の構成図を示す。 FIG. 2 shows a configuration diagram of an embodiment of the present invention.
第2図の照明装置lは半導体装置の製造工程で使用され
る場合のものである。The lighting device 1 shown in FIG. 2 is used in the manufacturing process of semiconductor devices.
第2図において、照明部2a内にはランプ2が設けられ
、該ランプ2の直下に複数個のルーバ6か設けられる。In FIG. 2, a lamp 2 is provided within the lighting section 2a, and a plurality of louvers 6 are provided directly below the lamp 2.
ランプ2は、紫外線光を発する低圧水銀ランプである。Lamp 2 is a low pressure mercury lamp that emits ultraviolet light.
また、ルーバ6は回動可能て、ランプ2の照射面の全域
に所定間隔て設けられる。Further, the louvers 6 are rotatable and are provided at predetermined intervals over the entire irradiation surface of the lamp 2.
一方、照明部2aの下方に配置される処理部3内に処理
室10か形成されている。この処理室10にはステージ
4か設けられ、ステージ4上に被照射物であるウェハ5
か載置される。なお、ステージ4は、ウェハ5を加熱す
る加熱体でもある。On the other hand, a processing chamber 10 is formed within the processing section 3 located below the illumination section 2a. A stage 4 is provided in the processing chamber 10, and a wafer 5, which is an object to be irradiated, is placed on the stage 4.
Or it will be placed. Note that the stage 4 also serves as a heating element that heats the wafer 5.
また、処理室10は、0リング11を介在させて透明ガ
ラス]2により密閉される。Further, the processing chamber 10 is sealed with a transparent glass 2 with an O-ring 11 interposed therebetween.
ここで、処理部3には、処理室IOを真空状態とするた
めの排気系と、ガスを供給するための供給系か接続され
る。Here, the processing section 3 is connected to an exhaust system for bringing the processing chamber IO into a vacuum state and a supply system for supplying gas.
このような照射装置lて処理されるウェハ5は、レジス
トか塗布された後、プラズマによるエッチンク前のもの
である。まず、ランプ2は点灯されているか、ルーハロ
は全閉状態である。このときに、ウェハ5か処理部3内
に搬送されて、ステージ4上に載置される。そして、ス
テージ4により例えは150°C程度に加熱され、加熱
後に供給系より処理室10内に窒素ガス(N2)又は不
活性ガスか供給されると共に、排気系により圧力調整弁
等で真空状態とし、例えばl0Torr程度に減圧する
。The wafer 5 processed by such an irradiation device is one that has been coated with a resist but before etching with plasma. First, the lamp 2 is lit or the roof is fully closed. At this time, the wafer 5 is transported into the processing section 3 and placed on the stage 4. Then, it is heated to about 150°C by the stage 4, and after heating, nitrogen gas (N2) or inert gas is supplied into the processing chamber 10 from the supply system, and a vacuum is maintained by the pressure regulating valve etc. by the exhaust system. The pressure is then reduced to, for example, about 10 Torr.
その後、ルーハロが全開状態となり、ランプ6からの紫
外線光かウェハ5のレジスト上に照射される。このとき
、ルーバ6は、例えは±56/秒の割合で矢印の如く揺
動する。このルーバ6の揺動により、紫外線の光路かウ
ェハ5上で常に変化しランプ2自体の照射ムラを低減す
る。すなわち、紫外線光か均一に照射されたウェハ5の
レジストは、加熱及びN2ガスにより、より強固に硬化
する。従って、後にプラズマエッチンク処理を行った場
合にレンスト焦げ等を生しることなく、耐プラズマ性か
向上される。Thereafter, the loop halo is fully opened, and the resist on the wafer 5 is irradiated with ultraviolet light from the lamp 6. At this time, the louver 6 swings as shown by the arrow at a rate of, for example, ±56/sec. This swinging of the louver 6 causes the optical path of the ultraviolet rays to constantly change on the wafer 5, reducing uneven irradiation of the lamp 2 itself. That is, the resist on the wafer 5 uniformly irradiated with ultraviolet light is more firmly cured by heating and N2 gas. Therefore, when a plasma etching process is performed later, the plasma resistance is improved without causing burnt or the like.
このように、ウェハ5の紫外線処理前はルーハロか全開
状態となって加熱を行うことかでき、処理後は余分な紫
外線照射を排除できることから、全体の処理時間を短く
することかできる。また、紫外線照射中にルーハロを揺
動させることから、均一な紫外線処理を行うことかでき
る。In this way, before the ultraviolet treatment of the wafer 5, heating can be carried out with the wafer 5 fully open, and after the treatment, unnecessary ultraviolet irradiation can be eliminated, thereby shortening the overall treatment time. Furthermore, since the lu-halo is oscillated during ultraviolet irradiation, uniform ultraviolet treatment can be performed.
なお、上記実施例では、エッチンク処理前の場合につい
て説明したか、これに限らず、紫外線処理を行う場合で
あれば何れでも適用することかできるものである。In the above embodiments, the case before etching treatment was described, but the present invention is not limited to this, and can be applied to any case where ultraviolet treatment is performed.
以上のように本発明によれは、被照射物とランプとの間
に回動可能なルーバを設け、また、このルーバを揺動さ
せることにより、ランプ自体の有する照射ムラを低減し
て均一な紫外線処理を行うことかでき、全体として短時
間処理を図ることかできる。As described above, according to the present invention, a rotatable louver is provided between the irradiated object and the lamp, and by swinging this louver, uneven irradiation of the lamp itself is reduced and uniform irradiation is achieved. Ultraviolet treatment can be performed, and the overall treatment time can be shortened.
第1図は本発明の原理説明図、 第2図は本発明の一実施例の構成図である。 図において、 lは照射装置、 2はランプ、 2aは照明部、 3は処理部、 4はステージ、 5は被照射物(ウェハ) 6はルーバ を示す。 FIG. 1 is a diagram explaining the principle of the present invention, FIG. 2 is a block diagram of an embodiment of the present invention. In the figure, l is the irradiation device, 2 is a lamp, 2a is a lighting section; 3 is a processing section, 4 is the stage, 5 is the irradiated object (wafer) 6 is louver shows.
Claims (2)
(2)を備えた照射装置において、 前記被照射物(5)とランプ(2)との間に、回動可能
な複数個のルーバ(6)を、該ランプ(2)の照射面の
全域に所定間隔で設けることを特徴とする照射装置。(1) In an irradiation device equipped with a lamp (2) that irradiates an object (5) with light of a predetermined wavelength, a rotatable plurality of rotatable lamps are provided between the object (5) and the lamp (2). An irradiation device characterized in that several louvers (6) are provided at predetermined intervals over the entire irradiation surface of the lamp (2).
に揺動することを特徴とする請求項(1)記載の照射装
置。(2) The irradiation device according to claim 1, wherein the louver (6) swings during irradiation with the lamp (2).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19428490A JPH0480760A (en) | 1990-07-23 | 1990-07-23 | Illuminator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19428490A JPH0480760A (en) | 1990-07-23 | 1990-07-23 | Illuminator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0480760A true JPH0480760A (en) | 1992-03-13 |
Family
ID=16322044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19428490A Pending JPH0480760A (en) | 1990-07-23 | 1990-07-23 | Illuminator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0480760A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1291721A1 (en) * | 2001-09-07 | 2003-03-12 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2003050621A1 (en) * | 2001-12-07 | 2003-06-19 | Motorola, Inc. | Continuously adjustable neutral density filter |
US6741329B2 (en) | 2001-09-07 | 2004-05-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2008086890A (en) * | 2006-09-29 | 2008-04-17 | Harison Toshiba Lighting Corp | Uv-ray irradiation device |
-
1990
- 1990-07-23 JP JP19428490A patent/JPH0480760A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1291721A1 (en) * | 2001-09-07 | 2003-03-12 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6741329B2 (en) | 2001-09-07 | 2004-05-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1491959A1 (en) * | 2001-09-07 | 2004-12-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2003050621A1 (en) * | 2001-12-07 | 2003-06-19 | Motorola, Inc. | Continuously adjustable neutral density filter |
US6744494B2 (en) | 2001-12-07 | 2004-06-01 | Motorola, Inc. | Continuously adjustable neutral density area filter |
JP2008086890A (en) * | 2006-09-29 | 2008-04-17 | Harison Toshiba Lighting Corp | Uv-ray irradiation device |
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