JPS6456873A - Microwave plasma cvd device having improved microwave introducing window - Google Patents
Microwave plasma cvd device having improved microwave introducing windowInfo
- Publication number
- JPS6456873A JPS6456873A JP5729688A JP5729688A JPS6456873A JP S6456873 A JPS6456873 A JP S6456873A JP 5729688 A JP5729688 A JP 5729688A JP 5729688 A JP5729688 A JP 5729688A JP S6456873 A JPS6456873 A JP S6456873A
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- introducing window
- introducing
- deposited film
- alumina
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photovoltaic Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To perform formation of a deposited film continuously and stably by constituting a microwave introducing window of alpha-alumina contg. specified amount of a vitreous component in a microwave plasma CVD device. CONSTITUTION:The inside of a reaction vessel 101 is vacuumized and exhausted via an exhaust pipe 104 and a base body 105 is heated and held at prescribed temp. with a built-in heater and a gaseous raw material is introduced through a gas introducing pipe 108 and the inside of the reaction vessel is maintained at about <=1X10<-2>Torr degree of vacuum. Then a deposited film is formed on the electrically-conductive base body 105 by introducing microwave into a discharge space 106 via a waveguide 103 and a microwave introducing window 102. At this time, the introducing window 102 is constituted of alumina ceramics in which 1-10% vitreous component such as SiO2, CaO and MgO is incorporated and the other components substantially are alpha-alumina. Thereby the introducing window 102 excellent in durability and transmission efficiency is obtained and a deposited film is formed continuously and stably.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5729688A JPS6456873A (en) | 1988-03-10 | 1988-03-10 | Microwave plasma cvd device having improved microwave introducing window |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5729688A JPS6456873A (en) | 1988-03-10 | 1988-03-10 | Microwave plasma cvd device having improved microwave introducing window |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6456873A true JPS6456873A (en) | 1989-03-03 |
JPH055897B2 JPH055897B2 (en) | 1993-01-25 |
Family
ID=13051590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5729688A Granted JPS6456873A (en) | 1988-03-10 | 1988-03-10 | Microwave plasma cvd device having improved microwave introducing window |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6456873A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5129359A (en) * | 1988-11-15 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate |
JPH0613197A (en) * | 1992-06-15 | 1994-01-21 | Nippon Koshuha Kk | High frequency electric power introducing passage |
-
1988
- 1988-03-10 JP JP5729688A patent/JPS6456873A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5129359A (en) * | 1988-11-15 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate |
JPH0613197A (en) * | 1992-06-15 | 1994-01-21 | Nippon Koshuha Kk | High frequency electric power introducing passage |
Also Published As
Publication number | Publication date |
---|---|
JPH055897B2 (en) | 1993-01-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |