JPS645033A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS645033A JPS645033A JP16061587A JP16061587A JPS645033A JP S645033 A JPS645033 A JP S645033A JP 16061587 A JP16061587 A JP 16061587A JP 16061587 A JP16061587 A JP 16061587A JP S645033 A JPS645033 A JP S645033A
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- protruding part
- cutting
- insulating film
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the generation of melting failure of fuse, and improve the yield of semiconductor chip, by arranging a fuse for redundant circuit provided with a region capable of cutting on the upper surface of a protruding part arranged on a field insulating film. CONSTITUTION:On a semiconductor substrate 1, a field insulating film 2 is arranged, and a protruding part 3 is formed by etching the surface of the insulating film 2. On the surface containing the protruding part 3, a polycrystalline silicon film, e.g., is deposited, and selectively etched to form a fuse 4 for redundant circuit provided with a region capable of cutting on the protruding part 3. A metal film is deposited on the whole surface, and selectively etched to form a wiring 5 connecting to the fuse 4. When the fuse 4 is melted by laser, the fuse 4 material of cutting region is completely scattered. Thereby, the generation of melting failure of fuse is prevented, and the yield of semiconductor chip can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16061587A JPS645033A (en) | 1987-06-26 | 1987-06-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16061587A JPS645033A (en) | 1987-06-26 | 1987-06-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS645033A true JPS645033A (en) | 1989-01-10 |
Family
ID=15718762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16061587A Pending JPS645033A (en) | 1987-06-26 | 1987-06-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS645033A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52149482A (en) * | 1976-06-04 | 1977-12-12 | Bosch Gmbh Robert | Device for isolating conductive path on ic |
JPS58115692A (en) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | Programmable read-only memory |
-
1987
- 1987-06-26 JP JP16061587A patent/JPS645033A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52149482A (en) * | 1976-06-04 | 1977-12-12 | Bosch Gmbh Robert | Device for isolating conductive path on ic |
JPS58115692A (en) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | Programmable read-only memory |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0288052A3 (en) | Semiconductor device comprising a substrate, and production method thereof | |
JPS5710992A (en) | Semiconductor device and manufacture therefor | |
KR900002081B1 (en) | Melting circuit of semiconductor device | |
JPS5563840A (en) | Semiconductor integrated device | |
IE851905L (en) | Semiconductor-on-insulator (soi) devices and soi ic¹fabrication method | |
IE801451L (en) | Semiconductor photoresist | |
US4692791A (en) | Monolithic IMPATT with stripline leads | |
JPS6480038A (en) | Manufacture of semiconductor integrated circuit device | |
JPS645033A (en) | Semiconductor device | |
EP0170560A3 (en) | Backside gettering of silicon wafers | |
EP0272491A3 (en) | Deep trench isolation with surface contact to substrate | |
JPS5730385A (en) | Semiconductor light emitting element | |
JPS5685846A (en) | Semiconductor integrated circuit device | |
JPS6457717A (en) | Manufacture of semiconductor device | |
EP0347792A3 (en) | Multi-layer wirings on a semiconductor device and fabrication method | |
JPS5491087A (en) | Manufacture of thin-film solar cell | |
JPS57164571A (en) | Semiconductro integrated circuit device | |
JPS5513904A (en) | Semiconductor device and its manufacturing method | |
EP0081419A3 (en) | High lead count hermetic mass bond integrated circuit carrier | |
JPS645032A (en) | Manufacture of semiconductor device | |
JPS6449225A (en) | Manufacture of semiconductor device | |
JPS53110371A (en) | Ceramic package type semiconductor device | |
JPS577949A (en) | Multilayer wiring method | |
JPS5766651A (en) | Manufacture of semiconductor device | |
JPS5766650A (en) | Manufacture of semiconductor device |