JPS645033A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS645033A
JPS645033A JP16061587A JP16061587A JPS645033A JP S645033 A JPS645033 A JP S645033A JP 16061587 A JP16061587 A JP 16061587A JP 16061587 A JP16061587 A JP 16061587A JP S645033 A JPS645033 A JP S645033A
Authority
JP
Japan
Prior art keywords
fuse
protruding part
cutting
insulating film
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16061587A
Other languages
Japanese (ja)
Inventor
Katsunobu Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16061587A priority Critical patent/JPS645033A/en
Publication of JPS645033A publication Critical patent/JPS645033A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the generation of melting failure of fuse, and improve the yield of semiconductor chip, by arranging a fuse for redundant circuit provided with a region capable of cutting on the upper surface of a protruding part arranged on a field insulating film. CONSTITUTION:On a semiconductor substrate 1, a field insulating film 2 is arranged, and a protruding part 3 is formed by etching the surface of the insulating film 2. On the surface containing the protruding part 3, a polycrystalline silicon film, e.g., is deposited, and selectively etched to form a fuse 4 for redundant circuit provided with a region capable of cutting on the protruding part 3. A metal film is deposited on the whole surface, and selectively etched to form a wiring 5 connecting to the fuse 4. When the fuse 4 is melted by laser, the fuse 4 material of cutting region is completely scattered. Thereby, the generation of melting failure of fuse is prevented, and the yield of semiconductor chip can be improved.
JP16061587A 1987-06-26 1987-06-26 Semiconductor device Pending JPS645033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16061587A JPS645033A (en) 1987-06-26 1987-06-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16061587A JPS645033A (en) 1987-06-26 1987-06-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS645033A true JPS645033A (en) 1989-01-10

Family

ID=15718762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16061587A Pending JPS645033A (en) 1987-06-26 1987-06-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS645033A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149482A (en) * 1976-06-04 1977-12-12 Bosch Gmbh Robert Device for isolating conductive path on ic
JPS58115692A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd Programmable read-only memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149482A (en) * 1976-06-04 1977-12-12 Bosch Gmbh Robert Device for isolating conductive path on ic
JPS58115692A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd Programmable read-only memory

Similar Documents

Publication Publication Date Title
EP0288052A3 (en) Semiconductor device comprising a substrate, and production method thereof
JPS5710992A (en) Semiconductor device and manufacture therefor
KR900002081B1 (en) Melting circuit of semiconductor device
JPS5563840A (en) Semiconductor integrated device
IE851905L (en) Semiconductor-on-insulator (soi) devices and soi ic¹fabrication method
IE801451L (en) Semiconductor photoresist
US4692791A (en) Monolithic IMPATT with stripline leads
JPS6480038A (en) Manufacture of semiconductor integrated circuit device
JPS645033A (en) Semiconductor device
EP0170560A3 (en) Backside gettering of silicon wafers
EP0272491A3 (en) Deep trench isolation with surface contact to substrate
JPS5730385A (en) Semiconductor light emitting element
JPS5685846A (en) Semiconductor integrated circuit device
JPS6457717A (en) Manufacture of semiconductor device
EP0347792A3 (en) Multi-layer wirings on a semiconductor device and fabrication method
JPS5491087A (en) Manufacture of thin-film solar cell
JPS57164571A (en) Semiconductro integrated circuit device
JPS5513904A (en) Semiconductor device and its manufacturing method
EP0081419A3 (en) High lead count hermetic mass bond integrated circuit carrier
JPS645032A (en) Manufacture of semiconductor device
JPS6449225A (en) Manufacture of semiconductor device
JPS53110371A (en) Ceramic package type semiconductor device
JPS577949A (en) Multilayer wiring method
JPS5766651A (en) Manufacture of semiconductor device
JPS5766650A (en) Manufacture of semiconductor device