JPS6448446A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6448446A JPS6448446A JP20398987A JP20398987A JPS6448446A JP S6448446 A JPS6448446 A JP S6448446A JP 20398987 A JP20398987 A JP 20398987A JP 20398987 A JP20398987 A JP 20398987A JP S6448446 A JPS6448446 A JP S6448446A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- metallic layer
- region
- flattened
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To flatten metallic electrode and wiring by forming a second metallic layer onto a first metallic layer and softening the first metallic layer only in a region flattened by using a rapid thermal annealing method. CONSTITUTION:A second metallic layer 8, which is composed of titanium nitride, zirconium nitride, etc., has low reflectivity, is easy to absorb radiation and is difficult to be reacted with aluminum, etc., is shaped only in a flattening region on a first metallic layer 7 consisting of an aluminum-aluminum alloy, etc., and flash-annealed by employing a rapid thermal annealing method. Consequently, the temperature only of a region in which there is the second metallic layer 8 is elevated, and the film 7 made up of the aluminum-aluminum alloy, etc. as a foundation for the region is softened and flattened only in the flattening region. Accordingly, a metallic electrode-wiring 4 composed of the layer 7 consisting of the aluminum-aluminum alloy, etc. can be flattened.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20398987A JPS6448446A (en) | 1987-08-19 | 1987-08-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20398987A JPS6448446A (en) | 1987-08-19 | 1987-08-19 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6448446A true JPS6448446A (en) | 1989-02-22 |
Family
ID=16482939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20398987A Pending JPS6448446A (en) | 1987-08-19 | 1987-08-19 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6448446A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006111961A (en) * | 2004-09-17 | 2006-04-27 | Nippon Seiki Co Ltd | Vapor deposition source system |
-
1987
- 1987-08-19 JP JP20398987A patent/JPS6448446A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006111961A (en) * | 2004-09-17 | 2006-04-27 | Nippon Seiki Co Ltd | Vapor deposition source system |
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