JPS6448446A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6448446A
JPS6448446A JP20398987A JP20398987A JPS6448446A JP S6448446 A JPS6448446 A JP S6448446A JP 20398987 A JP20398987 A JP 20398987A JP 20398987 A JP20398987 A JP 20398987A JP S6448446 A JPS6448446 A JP S6448446A
Authority
JP
Japan
Prior art keywords
aluminum
metallic layer
region
flattened
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20398987A
Other languages
Japanese (ja)
Inventor
Ichiro Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20398987A priority Critical patent/JPS6448446A/en
Publication of JPS6448446A publication Critical patent/JPS6448446A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To flatten metallic electrode and wiring by forming a second metallic layer onto a first metallic layer and softening the first metallic layer only in a region flattened by using a rapid thermal annealing method. CONSTITUTION:A second metallic layer 8, which is composed of titanium nitride, zirconium nitride, etc., has low reflectivity, is easy to absorb radiation and is difficult to be reacted with aluminum, etc., is shaped only in a flattening region on a first metallic layer 7 consisting of an aluminum-aluminum alloy, etc., and flash-annealed by employing a rapid thermal annealing method. Consequently, the temperature only of a region in which there is the second metallic layer 8 is elevated, and the film 7 made up of the aluminum-aluminum alloy, etc. as a foundation for the region is softened and flattened only in the flattening region. Accordingly, a metallic electrode-wiring 4 composed of the layer 7 consisting of the aluminum-aluminum alloy, etc. can be flattened.
JP20398987A 1987-08-19 1987-08-19 Manufacture of semiconductor device Pending JPS6448446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20398987A JPS6448446A (en) 1987-08-19 1987-08-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20398987A JPS6448446A (en) 1987-08-19 1987-08-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6448446A true JPS6448446A (en) 1989-02-22

Family

ID=16482939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20398987A Pending JPS6448446A (en) 1987-08-19 1987-08-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6448446A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006111961A (en) * 2004-09-17 2006-04-27 Nippon Seiki Co Ltd Vapor deposition source system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006111961A (en) * 2004-09-17 2006-04-27 Nippon Seiki Co Ltd Vapor deposition source system

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